MJ900 – MJ901 PNP
MJ1000 – MJ1001 NPN
COMPLEMENTARY POWER DARLINGTONS
The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas
transistors in monolithic Darlington configuration, and are mounted in
JEDEC TO-3 metal case. They are intended for use in power linear and
switching applications.
PNP types are the MJ900 and MJ901, and their complementary NPN
types are the MJ1000 and MJ1001 respectively.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
Value
60
Unit
V
CBO
Collector-Base Voltage
Vdc
80
60
Vdc
80
5.0
Vdc
V
CEO
Collector-EmitterVoltage
I
B
=0
V
EBO
Emitter-Base Voltage
I
C
Collector Current
I
C(RMS)
8.0
Adc
Page 1 of 4
MJ900 – MJ901 PNP
MJ1000 – MJ1001 NPN
Symbol
Ratings
MJ900
MJ1000
MJ901
MJ1001
@ T
C
< 25°
MJ900
MJ1000
Derate above
MJ901
25°C
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
Value
Unit
I
B
Base Current
0.1
Adc
Watts
W/°C
90
0.515
P
T
Power Dissipation
T
J
Junction Temperature
-65 to +200
°C
T
S
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
MJ900
MJ1000
MJ901
MJ1001
Value
1.94
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO
Ratings
Collector-Emitter
Breakdown Voltage (*)
Test Condition(s)
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
Min Typ Mx Unit
60
80
-
-
-
-
-
500
-
µAdc
-
Vdc
-
I
C
=100 mAdc, I
B
=0
I
CEO
Collector Cutoff Current
V
CE
=30 Vdc, I
B
=0
V
CE
=40 Vdc, I
B
=0
Page 2 of 4
MJ900 – MJ901 PNP
MJ1000 – MJ1001 NPN
Symbol
I
EBO
Ratings
Emitter Cutoff Current
Test Condition(s)
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
Min Typ Mx Unit
-
-
2.0
mAdc
V
BE
=5.0 Vdc, I
C
=0
V
CB
=60 V, R
BE
=1.0 k ohm
-
-
-
-
-
1.0
-
mAdc
-
5.0
-
I
CER
Collector-Emitter Leakage
Current
V
CB
=80 V, R
BE
=1.0 k ohm
V
CB
=60 V, R
BE
=1.0 k ohm,
T
C
=150°C
V
CB
=80 V, R
BE
=1.0 k ohm,
T
C
=150°C
I
C
=3.0 A, I
B
=12 mAdc
-
-
2.0
Vdc
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=8.0 A, I
B
=40 mAdc
-
-
4.0
Symbol
V
F
Ratings
Forward Voltage (pulse
method)
I
F
=3 A
Test Condition(s)
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001
Min Typ Mx Unit
-
1.8
-
V
V
BE
Base-Emitter Voltage (*)
I
C
=3.0 Adc, V
CE
=3.0Vdc
-
-
2.5
V
V
CE
=3.0 Vdc, I
C
=3.0 Adc
1000
-
-
-
H
FE
DC Current Gain (*)
V
CE
=3.0 Vdc, I
C
=4.0 Adc
750
-
-
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
! ! ! For PNP types current and voltage values are negative ! ! !
Page 3 of 4
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