NPN BC140/10 – BC140/16
NPN BC141/10 – BC141/16
GENERAL PURPOSE TRANSISTORS
They are silicon planar epitaxial NPN transistors mounted in TO-39 metal package.
They are particulary designed for audio amplifiers and switching applications up to 1A.
PNP complements are the BC160 – BC161.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
Junction Temperature
Storage Temperature range
Collector-Base Voltage
I
E
= 0
Collector-Emitter Voltage
I
B
= 0
Emitter-Base Voltage
I
C
= 0
Collector Current
Base Current
Ratings
BC140
BC141
BC140
BC141
BC140
BC141
BC140
BC141
BC140
BC141
@ T
case
= < 45°
@ T
amb
=
< 45°
Value
80
100
40
60
7
1
0.1
3.7
0.65
175
-55 to +175
Unit
V
V
V
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-c
R
thJ-amb
Ratings
Thermal Resistance, Junction-case
Thermal Resistance, Junction-ambient
Value
35
200
Unit
K/ W
K/ W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
COMSET SEMICONDUCTORS
1/3
NPN BC140/10 – BC140/16
NPN BC141/10 – BC141/16
Symbol
I
CES
V
CB0
V
CE0
(*)
V
EB0
V
CE(SAT)
(*)
Ratings
Collector – Cutoff Current
Test Condition(s)
I
E
= 0 ;V
CES
= 60 V
I
E
= 0 ; V
CES
= 60 V
Min
-
-
80
100
40
60
7
-
-
-
-
-
-
40
63
100
-
-
-
50
-
-
-
Typ Mx Unit
-
-
-
-
-
-
-
0.1
0.35
0.6
1.25
75
40
90
140
100
160
26
20
30
-
12
-
-
100
100
-
-
-
-
-
nA
µA
V
V
V
T
amb
= 150°c
Collector – Base Breakdown I
C
= 100 µA
I
E
= 0
Voltage
Collector – Emitter
I
C
= 30 mA
I
B
= 0
Breakdown Voltage
Emitter – Base Breakdown
I
E
= 100 µA
I
C
= 0
Voltage
Collector-Emitter saturation
Voltage
Base-Emitter Voltage
I
C
= 100 mA , I
B
= 10 mA
I
C
= 500 mA , I
B
= 50 mA
I
C
= 1 A, I
B
= 100 mA
I
C
= 1 A , V
CE
= 1V
I
C
= 100 µA , V
CE
= 1 V
BC140
BC141
BC140
BC141
BC140
BC141
BC140
BC141
BC140
BC141
V
BE
(*)
Gr 10
Gr 16
Gr 10
Gr 16
Gr 10
Gr 16
h
FE
(*)
DC Current Gain
I
C
= 100 mA , V
CE
= 1 V
I
C
= 1 A , V
CE
= 1 V
f
T
C
CBO
t
off
t
on
Transition Frequency
Collector – base
Capacitance
Turn-off times
Turn-on times
I
C
= 50 mA , V
CE
= 10 V
I
E
= 0 ;V
CB
= 10V
f = 1 MH
Z
I
C
=100 mA
I
B1
=-I
B2
=5 mA
I
C
=100 mA
I
B1
=1 mA
1
1.8
-
-
-
250
160
250
-
-
-
-
25
850
250
V
-
MH
Z
pF
ns
ns
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%
COMSET SEMICONDUCTORS
2/3
NPN BC140/10 – BC140/16
NPN BC141/10 – BC141/16
MECHANICAL DATA CASE TO-39
DIMENSIONS
A
B
C
D
E
F
G
H
L
mm
6,25
13,59
9,24
8,24
0,78
1,05
0,42
45°
4,1
Pin 1 :
Pin 2 :
Case :
Emitter
Base
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
3/3
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