9014
NPN SILICON TRANSISTOR
TO
92
FEATURES
Power dissipation
P
CM
: 0.4
W Tamb=25
Collector current
A
I
CM
: 0.1
Collector-base voltage
V
V
(BR)CBO
: 50
1.EMITTER
2.BASE
3.COLLECTOR
1 2 3
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain(note)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Tamb=25
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
H
FE
1
unless otherwise specified
Test
Ic= 100
Ic= 0. 1
I
E
= 100
V
CB
=50
V
CE
=35
V
EB
=
V
CE
=
3
5
conditions
A
mA
A
V,
V,
V
V,
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
B
=0
I
C
=0
I
C
= 1mA
I
B
= 5 mA
I
B
= 5mA
I
C
= 10mA
150
MHz
60
MIN
50
45
5
0.1
0.1
0.1
1000
0.3
1
V
V
TYP
MAX
UNIT
V
V
V
A
A
A
V
CE
(sat)
V
BE
(sat)
I
C
= 100mA,
I
C
= 100 mA,
V
CE
= 5
V,
Transition frequency
f
T
f =
30MHz
CLASSIFICATION OF H
FE(1)
Rank
Range
A
60-150
B
100-300
C
200-600
D
400-1000
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
