Semiconductor
SI5313-C / SI5313-C(B)
IRED
Features
•
Colorless transparency lens type
• φ5mm(T-13/4)
all plastic mold type
•
Low power consumption
Applications
•
Infrared remote control and free air transmission systems with low forward voltage and
comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors.
Outline Dimensions
unit :
mm
STRAIGHT TYPE
5.0±
0.2
STOPPER TYPE
5.0±
0.2
8.6±
0.2
0.8±
0.2
0.8±
0.2
8.6±
0.2
2.7±
0.5
0.5
23.0 MIN
0.5
23.0 MIN
1.0 MIN
2.54 NOM
2.54 NOM
1.0 MIN
1
2
5.8±
0.2
1
2
5.8±
0.2
PIN Connections
1.Cathode
2.Anode
KLI-0001-000
1
SI5313-C / SI5315-C(B)
Absolute maximum ratings
Characteristic
Power Dissipation
Forward Current
*
1
Peak Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
*
2
Soldering Temperature
Symbol
P
D
I
F
I
FP
V
R
T
opr
T
stg
T
sol
Ratings
150
100
1
4
-25½85
-30½100
260℃ for 5 seconds
Unit
mW
mA
A
V
℃
℃
*1.Duty ratio = 1/16, Pulse width = 0.1ms
*2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package
Electrical Characteristics
Characteristic
Forward Voltage
Radiant Intensity
Peak Wavelength
Spectrum Bandwidth
Reverse Current
Symbol
V
F
I
E
Test Condition
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
V
R
=4V
I
F
= 50mA
Min.
-
10
-
-
-
-
Typ.
1.4
20
880
50
-
±30
Max.
1.8
-
-
-
10
-
Unit
V
mW/Sr
nm
nm
uA
deg
λ
P
Δ
λ
I
R
θ
1
/
2
*
3
Half angle
*3.
θ
1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity
KLI-0001-000
2
SI5313-C / SI5313-C(B)
Characteristic Diagrams
Fig. 1 I
F
- V
F
Fig. 2 I
E
- I
F
Forward Voltage V
F
[V]
Radiant Intensity I
E
[mW/Sr]
Forward Current I
F
[mA]
Forward Current I
F
[mA]
Fig. 3 I
F
– Ta
Fig.4 Spectrum Distribution
Forward Current I
F
[mA]
Relative Intensity [%]
Ambient Temperature Ta [
℃
]
Wavelength
λ
[nm]
Fig. 5 Radiation Diagram
Relative Radiant Intensity I
E
[%]
KLI-0001-000
3
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