Product Specification
PE64101
Product Description
The PE64101 is a DuNE™-enhanced
Digitally Tunable
Capacitor (DTC) based on Peregrine’s UltraCMOS
®
technology. DTC products provide a monolithically
integrated impedance tuning solution for demanding RF
applications. They also offer a cost-effective tunable
capacitor with excellent linearity and ESD performance.
This highly versatile product can be mounted in series or
shunt configuration and is controlled by a 3-wire (SPI
compatible) serial interface. High ESD rating of 2 kV
HBM on all ports making this the ultimate in integration
and ruggedness. The DTC is offered in a standard 12-
lead 2.0 x 2.0 x 0.55 mm QFN package.
Peregrine’s DuNE™ technology enhancements deliver
high linearity and exceptional harmonics performance. It
is an innovative feature of the UltraCMOS
®
process,
providing performance superior to GaAs with the
economy and integration of conventional CMOS.
UltraCMOS
®
Digitally Tunable Capacitor
(DTC) 100 - 3000 MHz
Features
3-wire (SPI compatible) 8-bit serial interface
F
RF-
Figure 1. Functional Block Diagram
EN
D
RF+
ESD
with built-in bias voltage generation and
stand-by mode for reduced power
consumption
DuNE™-enhanced
UltraCMOS
®
device
5-bit 32-state Digitally Tunable Capacitor
C = 1.38
–
5.90 pF (4.3:1 tuning ratio) in
discrete 146 fF steps
RF power handling (up to 26 dBm, 6 V
PK
RF)
and high linearity
High quality factor
Wide power supply range (2.3 to 3.6V) and
low current consumption
(typ. I
DD
= 30 µA @ 2.8V)
Optimized for shunt configuration, but can
also be used in series configuration
Excellent 2 kV HBM ESD tolerance on all
pins
Applications include:
Antenna tuning
Tunable filters
Phase shifters
Impedance matching
O
ESD
71-0066-01
Serial
Interface
CMOS Control
Driver and ESD
Document No. 70-0378-01
│
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LI
FE
Figure 2. Package Type
12-lead 2 x 2 x 0.55 mm QFN
©2012 Peregrine Semiconductor Corp. All rights reserved.
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Logo updated under non-rev change. Peregrine products are protected under one or more of the following U.S. Patents: http://patents.psemi.com
PE64101
Product Specification
Table 1. Electrical Specifications @ 25°C, V
DD
= 2.8V
Parameter
Operating Frequency Range
7
Minimum Capacitance
Maximum Capacitance
Tuning Ratio
Step Size
Quality Factor (C
min
)
1
Configuration
Both
Shunt
6
Shunt
6
Shunt
6
Shunt
6
Shunt
6
State = 00000, 100 MHz (RF+ to Grounded RF-)
State = 11111, 100 MHz (RF+ to Grounded RF-)
C
max
/C
min
, 100 MHz
5 bits (32 states), constant step size (100 MHz)
470 - 582 MHz with L
s
removed
698 - 960 MHz, with L
s
removed
1710 - 2170 MHz, with L
s
removed
470 - 582 MHz with L
s
removed
698 - 960 MHz, with L
s
removed
1710 - 2170 MHz, with L
s
removed
State 00000
State 11111
Condition
Min
100
-10%
-10%
1.38
5.90
4.3:1
0.146
50
50
30
pF
Typ
Max
3000
+10%
+10%
Units
MHz
pF
pF
Quality Factor (C
max
)
1
Shunt
6
Shunt
7
Shunt
6
Self Resonant Frequency
LI
FE
50
25
10
5.5
2.5
60
2
5
5
Document No. 70-0378-01
GHz
-36
-36
-36
-36
-36
-36
dBm
dBm
dBm
dBm
dBm
dBm
dBm
10
20
20
µs
µs
µs
Harmonics (2
fo
and 3
fo
)
4
Series
5
470 to 582 MHz, Pin +26 dBm, 50Ω
698 to 915 MHz, Pin +26 dBm, 50Ω
1710 to 1910 MHz, Pin +26 dBm, 50Ω
470 to 582 MHz, Pin +20 dBm, 50Ω
698 to 915 MHz, Pin +20 dBm, 50Ω
1710 to 1910 MHz, Pin +20 dBm, 50Ω
Switching Time
2, 3
Start-up Time
2
Wake-up Time
2, 3
Shunt
6
Shunt
6
Shunt
6
State change to 10/90% delta capacitance between any two
states
EN
D
Note: 1. Q for a Shunt DTC based on a Series RLC equivalent circuit
Q = X
C
/ R = (X-X
L
)/R, where X = X
L
+ X
C
, X
L
= 2*pi*f*L, X
C
= -1 / (2*pi*f*C), which is equal to removing the effect of parasitic inductance L
S
2. DC path to ground at RF+ and RF– must be provided to achieve specified performance
3. State change activated on falling edge of SEN following data word
4. Between 50Ω ports in series or shunt configuration using a pulsed RF input with 4620 vs period, 50% duty cycle, measured per 3GPPTS45.005
5. In series configuration the greater RF power or higher RF voltage should be applied to RF+
6. RF
-
should be connected to ground
7. DTC operation above SRF is possible
O
Time from V
DD
within specification to all performances within
specification
State change from standby mode to RF state to all
performances within specification
F
3rd Order Intercept Point
Shunt
6
IIP3 = (Pblocker + 2*Ptx - [IMD3]) / 2, where IMD3 = -95 dBm,
Ptx = +20 dBm and Pblocker = -15 dBm
©2012 Peregrine Semiconductor Corp. All rights reserved.
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│
UltraCMOS
®
RFIC Solutions
Logo updated under non-rev change. Peregrine products are protected under one or more of the following U.S. Patents: http://patents.psemi.com
PE64101
Product Specification
Figure 3. Pin Configuration (Top View)
SDAT
GND
Table 3. Operating Ranges
1
Parameter
V
DD
Supply Voltage
I
DD
Power Supply Current
(Normal mode)
6
Symbol
V
DD
I
DD
I
DD
V
IH
V
IL
1.2
0
Min
2.3
Typ
2.8
30
20
Max
3.6
75
45
3.1
0.2
6
6
6
+26
+20
10
+85
+150
Units
V
µA
µA
V
V
V
PK
V
PK
V
PK
dBm
dBm
µA
°C
°C
Pin 1
12
11
10
RF+
SEN
11
13
GND
8
9 RF+
I
DD
Power Supply Current
(Standby mode)
6
Control Voltage High
SCLK
33
7 RF-
6
Peak Operating RF Voltage
5
V
P
to V
M
V
P
to RFGND
V
M
to RFGND
RF Input Power (50Ω )
3, 4, 5
4
VDD
5
GND
6
RF-
Input Control Current
Operating Temperature Range
Table 2. Pin Descriptions
Pin #
1
2
3
4
5
6
7
8
9
Pin Name
SEN
GND
SCLK
VDD
GND
RF-
RF-
GND
RF+
RF+
Serial Enable
Digital and RF Ground
Serial Interface Clock Input
Power Voltage
Digital and RF Ground
Negative RF Port
1
Negative RF Port
1
Description
Storage Temperature Range
O
Notes: 1. Operation should be restricted to the limits in the Operating Ranges table
2. The DTC is active when STBY is low (set to 0) and in low-current
stand-by mode when high (set to 1)
3. Maximum CW power available from a 50Ω source in shunt configuration
4. Maximum CW power available from a 50Ω source in series configuration
5. RF+ to RF- and RF+ and/or RF- to ground. Cannot exceed 6 V
PK
or max
RF input power (whichever occurs first)
6. I
DD
current typical value is based on V
DD
= 2.8V. Max I
DD
is based on
V
DD
= 3.6V
F
Symbol
V
DD
V
I
V
ESD
V
ESD
Table 4. Absolute Maximum Ratings
Parameter/Conditions
Power supply voltage
Voltage on any DC input
ESD Voltage (HBM, MIL_STD
883 Method 3015.7)
ESD Voltage (MM, JEDEC
JESD22-A115-A)
Min
-0.3
-0.3
Max
4.0
4.0
2000
100
Units
V
V
V
V
Digital and RF Ground
3
Positive RF Port
2
Positive RF Port
2
10
11
12
13
EN
D
GND
Digital and RF Ground
SDAT
GND
Serial Interface Data Input
Digital and RF Ground
3
Notes: 1. Pins 6 and 7 must be tied together on PCB board to reduce
inductance
2. Pins 9 and 10 must be tied together on PCB board to reduce
inductance
3. Pin 2, 5, 8, 11 and 13 must be connected together on PCB
Exceeding absolute maximum ratings may cause
permanent damage. Operation between operating
range maximum and absolute maximum for
extended periods may reduce reliability.
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS
®
device, observe
the same precautions that you would use with other
ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the specified rating.
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the
PE64101 in the 12-lead 2 x 2 QFN package is
MSL1.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS
®
devices are immune to latch-up.
Document No. 70-0378-01
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FE
shunt
series
I
CTL
1
T
OP
T
ST
-40
-65
GND
22
8 GND
7
Control Voltage Low
©2012 Peregrine Semiconductor Corp. All rights reserved.
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Logo updated under non-rev change. Peregrine products are protected under one or more of the following U.S. Patents: http://patents.psemi.com
PE64101
Product Specification
Performance Plots @ 25°C and 2.8V unless otherwise specified
Figure 4. Measured Shunt C (@ 100 MHz) vs
State (temperature)
Measured Shunt C (@ 100 MHz) vs. State
8
7
6
Figure 5. Measured Shunt S
11
(major states)
Capacitance(pF)
5
4
3
2
1
0
0
5
10
15
State
20
25
30
Figure 6. Measured Step Size vs State
(frequency)
Measured Step Size vs. State (frequency)
200
Figure 7. Measured Series S
11
/S
22
(major states)
Measured Series S11/S22 (major states)
F
100
470
582
862
100
EN
D
O
MHz
MHz
MHz
MHz
30
Frequency(.3 - 3000 MHz)
150
Step size (fF)
50
5
10
15
State
20
25
Figure 8. Measured Shunt C vs
Frequency (major states)
Figure 9. Measured Series S
21
vs Frequency
(major states)
Measured Series S21 vs. Frequency (major states)
0
-5
-10
-15
dB(S21)
LI
FE
S11
S22
S11
S22
S11
S22
S11
S22
S11
S22
S11
S22
S11
S22
C0
C0
C1
C1
C2
C2
C4
C4
C8
C8
C16
C16
C31
C31
-20
-25
-30
-35
-40
0
0.5
1
1.5
2
Frequency (GHz)
2.5
C0
C1
C2
C4
C8
C16
C31
3
©2012 Peregrine Semiconductor Corp. All rights reserved.
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Document No. 70-0378-01
│
UltraCMOS
®
RFIC Solutions
Logo updated under non-rev change. Peregrine products are protected under one or more of the following U.S. Patents: http://patents.psemi.com
PE64101
Product Specification
Figure 10. Measured Shunt Q vs
Frequency (major states)
Figure 11. Measured 2-Port Shunt S21 vs
Frequency (major states)
Measured 2-Port Shunt S21 vs. Frequency (major states)
0
-5
-10
-15
LI
FE
-20
-25
-30
-35
-40
0
2
4
Frequency (GHz)
6
dB(S21)
C0
C1
C2
C4
C8
C16
C31
8
Figure 12. Measured Self Resonance
Frequency vs State
Measured Self Resonance Frequency vs. State
6
5.5
5
4.5
4
3.5
Figure 13. Measured Shunt Q vs State
Measured Q vs. State
F
140
120
100
80
60
160
Self Resonance Frequency (GHz)
O
5
10
15
20
State [0..31]
25
30
35
100 MHz
470 MHz
698 MHz
1710 MHz
EN
D
3
Q
40
20
0
5
10
15
State
20
25
30
2.5
0
Document No. 70-0378-01
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©2012 Peregrine Semiconductor Corp. All rights reserved.
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Logo updated under non-rev change. Peregrine products are protected under one or more of the following U.S. Patents: http://patents.psemi.com
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