Preliminary Data Sheet
2.2
FMS2017
2.4GHz DPDT GaAs Single-Band WLAN Switch
Features:
♦
♦
♦
♦
♦
Available as RF known good die
Suitable for Single-band WLAN 802.11b/g
Applications
Excellent low control voltage performance
Very low Insertion loss typ. 0.55dB at 2.4GHz
High isolation typ. 23dB at 2.4GHz
Functional Schematic
V4
TX
V3
AN1
ANT2
V1
RX
V2
Description and Applications:
The FMS2017 is a low loss, single band Gallium Arsenide antenna diversity switch designed for use
in Wireless LAN applications. The die is fabricated using the Filtronic FL05 0.5µm switch process
technology that offers leading edge performance, optimised for switch applications. The FMS2017 is
designed for use in 802.11b/g WLAN modules.
Electrical Specifications:
Parameter
Insertion Loss (All Paths)
Isolation (All Paths)
Return Loss
P1dB
2nd Harmonic Level
3rd Harmonic Level
Switching speed
(T
AMBIENT
= 25°C,V
ctrl
= 0V/(2.4V,+3.3V), Z
IN
= Z
OUT
= 50Ω)
Conditions
2.5GHz, Small Signal
2.5GHz, Small Signal
2.5GHz, Small Signal
2.5GHz Control Voltage 3.0V
2.4GHz, Pin = 32dBm, Vctrl =2.4V
2.4GHz, Pin = 32dBm, Vctrl =2.4V
Vctrl=2.4V, Pin=20dBm
Min
Typ
0.55
23
20
37
-65
-65
20
Max
Units
dB
dB
dB
dBm
dBc
dBc
nS
Note:
External DC blocking capacitors are required on all RF ports (typ: 47pF)
All unused ports terminated in 50Ω.
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email: sales@filcsi.com
Website: www.filcs.com
Preliminary Data Sheet
2.2
FMS2017
Absolute Maximum Ratings:
Parameter
Max Input Power
Control Voltage
Operating Temperature
Storage Temperature
Symbol
Pin
Vctrl
Toper
Tstor
Absolute Maximum
+36dBm
+5V
-40°C to +100°C
-55°C to +150°C
Note:
Exceeding any one of these absolute maximum ratings may cause permanent damage to the
device.
Truth Table:
State
1
2
3
4
5
6
V1
High
Low
Low
Low
Low
High
V2
Low
High
Low
Low
High
Low
V3
Low
Low
High
Low
Low
High
V4
Low
Low
Low
High
High
Low
PATH(S)
RX-ANT1
RX-ANT2
TX-ANT2
TX-ANT1
TX-ANT1 & RX-ANT2
TX-ANT2 & RX-ANT1
Note:
‘High’
‘Low’
= +2.4V to +3.3V
= 0V to +0.2V
Pad and Die Layout:
H
D
G
Pad
Ref
A
B
Pad
Name
ANT1
RX
ANT2
TX
V1
V2
V3
V4
Description
Antenna 1
Receive
Antenna 2
Transmit
Vctrl1 (A1 to RX)
Vctrl2 (A2 to RX)
Vctrl3 (TX to A2)
Vctrl4 (A1 to TX)
Pin Coordinates
(µm)
(155, 300)
(465, 90)
(775, 300)
(465, 510)
(155, 90)
(775, 90)
(775, 510)
(155, 510)
A
C
C
D
E
F
E
B
F
G
H
Note:
Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the
bond pad opening
Die Size (µm)
930x600
Die Thickness (µm)
150
Min. Bond Pad
Pitch (µm)
225
Min. Bond pad
opening (µm)
85x85
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email: sales@filcsi.com
Website: www.filcs.com
Preliminary Data Sheet
2.2
FMS2017
Typical Measured Performance on Evaluation Board (De-Embedded):
(Measurement Conditions V
CTRL
=3V, T
AMBIENT
= 25°C unless otherwise stated)
Insertion Loss
0 .0
-15
Tx-Rx Isolation
-0 .2
-20
Insertion Loss (dB)
-0 .6
Isolation (dB)
-0 .4
-25
-30
-0 .8
-35
-1 .0
0.5
1.0
1 .5
2.0
F requ enc y (GH z)
2 .5
3.0
-40
0 .5
1.0
1 .5
2.0
Fr eque ncy (GH z)
2 .5
3.0
Return Loss
-10
-15
Return Loss (dB)
-20
-25
-30
-35
0 .5
1.0
1 .5
2.0
F r eque ncy (G H z)
2 .5
3.0
Insertion Loss vs Input Power
0
-0.2
Insertion Loss vs Control Voltage
0
-0.4
-0.4
Insertion Loss (dB)
-0.6
-0.8
-1
-1.2
Insertion Loss (dB)
-0.8
-1.2
-1.6
-1.4
-1.6
10
15
20
25
Input Pow er (dBm )
30
35
Input Power=28dBm
-2
1.50
1.75
2.00
2.25
Control Voltage (V)
2.50
2.75
3.00
3
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email: sales@filcsi.com
Website: www.filcs.com
Preliminary Data Sheet
2.2
FMS2017
Evaluation Board:
V4, GND, V3
RF1/TX
BOM
Label
C1
C2
Component
Capacitor, 100pF, 0603
Capacitor, 47pF, 0402
Preferred evaluation board material is 0.25
mm thick ROGERS RT4350. All RF tracks
should be 50 ohm characteristic
impedance.
Absolute placement of
critical.
C2
C2
C2
C2
C2
C1 C1
BOARD
C2
C2
C2
surface mount de-coupling capacitors is not
RF3/ANT1
C1 C1
RF4/ANT2
RF2/RX
V1, GND V2
Evaluation Board De-Embedding Data (Measured):
Insertion Loss
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
0.5
1.0
1.5
2.0
Frequency (GHz)
2.5
3.0
Return Loss
0
-10
Insertion Loss (dB)
Return Loss (dB)
-20
-30
-40
0.5
1.0
1.5
2.0
Frequency (GHz)
2.5
3.0
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email: sales@filcsi.com
Website: www.filcs.com
Preliminary Data Sheet
2.2
FMS2017
Ordering Information:
Part Number
FMS2017-000-WP
FMS2017-000-GP
FMS2017-000-EB
FMS2017-000-FF
Description
Die – waffle pak
Die – gel pak
Die mounted on evaluation board
Wafer mounted on film frame
Preferred Assembly Instructions:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be
used where possible.
The back of the die is not metallised and the recommended mounting method is by the use of
conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid
encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height.
For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1
LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in
an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with
dry nitrogen.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is
recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A
nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective
results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique,
stage temperature should not be raised above 200°C and bond force should not be raised above 60g.
Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve
good wire bonds.
Bonds should be made from the die first and then to the mounting substrate or package. The physical
length of the bondwires should be minimised especially when making RF or ground connections.
Handling Precautions:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No.
22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-
HDBK-263.
Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email: sales@filcsi.com
Website: www.filcs.com
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