HM51W17805 Series
LP
EO
Description
Features
•
•
•
•
16 M EDO DRAM (2-Mword
×
8-bit)
2 k Refresh
E0155H10 (Ver. 1.0)
(Previous ADE-203-631D (Z))
Jun. 27, 2001
The HM51W 17805 is a C MOS dynamic R AM orga nized 2, 097,152-w ord
×
8-bit. It employs the most
adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM51W 17805 off ers Extende d Da ta
Out (ED O) P age Mode as a high spee d ac ce ss mode. Multiplexe d addr ess input per mits the HM51W 17805 to
be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.
•
Single 3.3 V (±0.3 V)
•
Access time: 50 ns/60 ns/70 ns (max)
•
Power dissipation
Active mode: 396 mW/360 mW/324 mW (max)
Standby mode : 7.2 mW (max)
: 0.54 mW (max) (L-version)
EDO page mode capability
Long refresh period
2048 refresh cycles : 32 ms
: 128 ms (L-version)
4 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
Hidden refresh
Self refresh (L-version)
Battery backup operation (L-version)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
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HM51W17805 Series
Ordering Information
Type No.
HM51W17805J-5
HM51W17805J-6
HM51W17805J-7
LP
EO
HM51W17805LJ-5
HM51W17805LJ -6
HM51W17805LJ -7
HM51W17805S-5
HM51W17805S-6
HM51W17805S-7
HM51W17805LS-5
HM51W17805LS-6
HM51W17805LS-7
HM51W17805TT-5
HM51W17805TT-6
HM51W17805TT-7
HM51W17805LTT-5
HM51W17805LTT-6
HM51W17805LTT-7
HM51W17805TS-5
HM51W17805TS-6
HM51W17805TS-7
HM51W17805LTS-5
HM51W17805LTS-6
HM51W17805LTS-7
2
Access time
50 ns
60 ns
70 ns
50 ns
60 ns
70 ns
50 ns
60 ns
70 ns
50 ns
60 ns
70 ns
50 ns
60 ns
70 ns
50 ns
60 ns
70 ns
50 ns
60 ns
70 ns
50 ns
60 ns
70 ns
Package
400-mil 28-pin plastic SOJ (CP-28DA)
300-mil 28-pin plastic SOJ (CP-28DNA)
400-mil 28-pin plastic TSOP II (TTP-28DA)
300-mil 28-pin plastic TSOP II (TTP-28DB)
Data Sheet E0155H10
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HM51W17805 Series
LP
EO
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Supply voltage relative to V
SS
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Parameter
Supply voltage
V
CC
Input high voltage
Input low voltage
Note:
V
IH
V
IL
1. All voltage referred to V
SS
.
Symbol
Value
–0.5 to V
CC
+ 0.5 (≤ 4.6 V (max))
–0.5 to +4.6
50
1.0
0 to +70
–55 to +125
Unit
V
V
mA
W
°C
°C
V
T
V
CC
Iout
P
T
Topr
Tstg
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Symbol
Min
3.0
2.0
–0.3
Typ
3.3
—
—
Max
3.6
V
CC
+ 0.3
0.8
Unit
V
V
V
Note
1
1
1
Data Sheet E0155H10
5
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