W TE
PO WE R SEM IC O ND UC TO R S
1N5817 – 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER
Features
!
!
!
!
!
!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
A
B
A
C
D
Mechanical Data
!
!
!
!
!
!
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
DO-41
Dim
Min
Max
A
25.4
—
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1)
@T
L
= 90°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
@T
A
=25°C unless otherwise specified
1N5817
20
14
1N5818
30
21
1.0
25
1N5819
40
28
Unit
V
V
A
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Lead (Note 1)
Operating and Storage Temperature Range
@I
F
= 1.0A
@I
F
= 3.0A
@T
A
= 25°C
@T
A
= 100°C
V
FM
I
RM
C
j
R
JL
T
j
, T
STG
0.450
0.750
0.550
0.875
1.0
10
110
60
-65 to +150
0.60
0.90
V
mA
pF
K/W
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1N5817 – 1N5819
1 of 3
© 2002 Won-Top Electronics
1.0
30
0.8
I
F
, NSTANTANEOUS FORWARD CURRENT (A)
I
(AV)
, AVERAGE OUTPUT CURRENT (A)
1N5817
10
1N5818
0.6
0.4
1N5819
1.0
0.2
Single Pulse Half-Wave
60 Hz Resistive or Inductive Load
T
j
= 25ºC
Pulse Width = 300
µ
s
2% Duty Cycle
0
10
40
60
80
100
120
140150
T
L
, LEAD TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
0.1
0
0.5
1.0
1.5
2.0
2.5
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
25
1000
T
j
= 25ºC
f = 1MHz
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
20
C
j
, CAPACITANCE (pF)
8.3ms Single Half Sine-Wave
JEDEC Method
15
100
10
5
10
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
1N5817 – 1N5819
2 of 3
©
2002
Won-Top Electronics
ORDERING INFORMATION
Product No.
!
1N5817-T3
1N5817-TB
1N5817
1N5818-T3
1N5818-TB
1N5818
1N5819-T3
1N5819-TB
1N5819
Package Type
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
Shipping Quantity
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
Products listed in
bold
are WTE
Preferred
devices.
!
T3 suffix refers to a 13” reel. TB suffix refers to Ammo Pack.
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING:
DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone:
886-7-822-5408 or 886-7-822-5410
Fax:
886-7-822-5417
Email:
sales@wontop.com
Internet:
http://www.wontop.com
We power your everyday.
© 2002 Won-Top Electronics
1N5817 – 1N5819
3 of 3
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