SE2525L
RangeCharger™ 2.4GHz Power Amplifier with Power Detector
Preliminary Information
Applications
DSSS 2.4GHz WLAN (IEEE802.11b)
OFDM 2.4GHz WLAN (IEEE802.11g)
Access Points, PCMCIA, PC cards
Product Description
The SE2525L is a 2.4GHz power amplifier designed
for use in the 2.4GHz ISM band for wireless LAN
applications. The device incorporates two selectable
power detectors for closed loop monitoring of the
output power.
For wireless LAN applications, the device meets the
requirements of 802.11g and delivers +19 dBm, at an
EVM of 2.7% and current of 160 mA @ 3.3 V.
The SE2525L‘s bias architecture provides for lower
current consumption at lower output power levels.
Also, the devices bias (V
B
) control allows for further
minor customization of the bias current for power
saving at lower output powers.
The SE2525L includes a digital enable control for
device on/off control.
The SE2525L has two selectable power detectors.
The internally coupled signal is selected by grounding
the
V
DET
IN/DET
SEL
pin. This detector detects signal at
the second stage improving the accuracy under
output mismatch conditions. The second detector
uses an external RF input pin which would typically be
taken from a directional coupler output. Both
detectors are temperature compensated for minimum
component count and high accuracy. Each of these
power detectors also have selectable positive and
negative slopes for ease of use with all chipsets.
Please note this device is not recommended for
new designs. SiGe’s SE2528L is a pin for pin
compatible device and can be used in existing
SE2525L application boards with only component
value changes. Application notes are available to
assist in the change.
Features
+19 dBm, EVM = 2.7%, 802.11g, OFDM 54 Mbps
+23 dBm, ACPR < -32 dBr, 802.11b
+25.5 dBm P
1dB
at 3.3 V
Selectable integrated external or internal coupled
temperature compensated power detector
Selectable Power Detector Slope for use with
multiple chipsets (Negative and Positive)
Integrated power amplifier enable pin (V
EN
)
Single supply voltage: 2.7 to 3.6 V
Lead free and RoHS Compliant
Small plastic package, 16 pin 4 mm x 4 mm QFN
Ordering Information
Type
SE2525L
SE2525L-R
SE2525L-EK1
Package
16 Pin QFN
16 Pin QFN
Evaluation Kit
Remark
Samples
Tape and Reel
Standard
Functional Block Diagram
V
B
V
REG
V
CC0
V
EN
Bias Generator
IN
Stage 1
Stage 2
Stage 3
OUT/V
CC3
Detector
(with Switch)
V
DET
IN/
DET
SEL
V
CC1
V
CC2
SLOPE
SEL
V
DET
OUT
Figure 1: Functional Block Diagram
28-DST-01
Rev 2.1
Apr-25-2006
Confidential
QA042506
1 of 12
SE2525L
RangeCharger™ 2.4GHz Power Amplifier with Power Detector
Preliminary Information
Pin Out Diagram
SE2525L
TopView
SLOPE
SEL
SE2525L
Bottom View
SLOPE
SEL
GND
1
6
1
5
1
4
1
3
1
3
1
4
1
5
IN
V
EN
V
B
V
CC0
1
2
3
4
5
6
7
8
1
2
1
1
1
0
9
GND
OUT /V
CC3
GND
GND
GND
OUT /V
CC3
GND
GND
1
2
1
1
1
0
9
8
7
6
5
1
6
1
2
3
4
GND
V
CC2
V
CC1
V
CC2
V
CC1
IN
V
EN
V
B
V
CC0
V
DET
OUT
V
DET
OUT
N/C
V
REG
N/C
V
DET
IN/DET
SEL
Figure 2: SE2525L Pin-Out Diagram
Pin Out Description
Pin No.
1
2
3
4
5
6
7
8
9 -10
11
12
13
14
15
16
Die Pad
Name
IN
V
EN
V
B
V
CC0
V
REG
N/C
V
DET
OUT
V
DET
IN/DET
SEL
GND
OUT/ V
CC3
GND
V
CC2
SLOPE
SEL
V
CC1
GND
GND
Description
Power amplifier RF input; DC block required.
Digital pin used to power up and power down the IC
Controls the bias level of the power amplifier
Bias/control circuit supply voltage
Internal regulator output
No Connect (Do not attach to GND or V
CC
)
Analog power detector output
Power Detector Input
Ground
Power Amplifier RF output and Stage 3 collector supply voltage
Ground
Stage 2 collector supply
Slope Select (N/C = Positive, GND = Negative)
Stage 1 collector supply
Ground
Exposed die pad; electrical and thermal ground
28-DST-01
Rev 2.1
Apr-25-2006
Confidential
QA042506
V
DET
IN/DET
SEL
V
REG
2 of 12
SE2525L
RangeCharger™ 2.4GHz Power Amplifier with Power Detector
Preliminary Information
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings for a long period of time may
cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the
recommended operating conditions defined below. This device is ESD sensitive. Handling and assembly of this
device should be at ESD protected workstations.
Symbol
V
CC
V
B
V
EN
IN
T
STG
T
j
Definition
Supply Voltage on pins V
CC0
, V
CC1
V
CC2
and V
CC3
Bias Control Voltage
Power Amplifier Enable
RF Input Power
Storage Temperature Range
Maximum Junction Temperature
Min.
-0.3
-0.3
-0.3
-
-40
-
Max.
4.0
4.0
4.0
4.0
+150
+150
Unit
V
V
V
dBm
°C
°C
Recommended Operating Conditions
Symbol
V
CC
T
A
Parameter
Supply Voltage on pins V
CC0
, V
CC1
V
CC2
and V
CC3
Ambient Temperature
Min.
2.7
-40
Max.
3.6
85
Unit
V
°C
DC Electrical Characteristics
Conditions:
Symbol
I
CC-802.11b
I
CC-802.11g
I
CC-1DB
I
OFF
V
REG
I
REG
V
ENH
V
ENL
V
B
I
B
V
CC
= V
EN
= 3.3 V, V
B
connected to V
REG
, T
A
= 25 °C, as measured on SiGe Semiconductor’s SE2525L-
EV1 evaluation board, unless otherwise noted.
Parameter
Supply Current
Supply Current
Supply Current
Supply Current
Regulator Voltage
Regulator current
Logic High Voltage
Logic Low Voltage
Bias voltage
Bias current
V
B
= 2.75 V
Conditions
P
OUT
= 23 dBm, 11 Mbps CCK
signal, BT = 0.45
P
OUT
= 19 dBm, 54 Mbps OFDM
signal, 64 QAM
P
OUT
= P
1dB
, No modulation
V
EN
= 0 V
I
REG
= 120 µA
(1)
-
T
A
= -40 to 85 °C, V
CC
= 2.7 to 3.6 V
T
A
= -40 to 85 °C, V
CC
= 2.7 to 3.6 V
-
Min.
-
-
-
-
-
-
1.3
0
0
-
Typ.
230
160
340
10
2.5
-
-
-
-
-
Max.
-
-
-
-
2.75
500
V
CC
0.5
V
REG
120
Unit
mA
mA
mA
µA
V
µA
V
V
V
µA
(1) No coupling or circuitry that provides a DC path to ground should be connected to the V
REG
pin. Connection to
the V
B
is allowed.
28-DST-01
Rev 2.1
Apr-25-2006
Confidential
QA042506
3 of 12
SE2525L
RangeCharger™ 2.4GHz Power Amplifier with Power Detector
Preliminary Information
802.11b AC Electrical Characteristics
Conditions:
Symbol
f
L-U
P
1dB
S
21
∆S
21
2f,
3f
V
CC
= V
EN
= 3.3 V, f = 2.45 GHz, V
B
connected to V
REG
, T
A
= 25 °C, as measured on SiGe
Semiconductor’s SE2525L-EV1 evaluation board, unless otherwise noted.
Parameter
Frequency Range
Output 1dB compression point
Small Signal Gain
Gain Variation over band
Harmonics
Adjacent Channel Power Ratio
ACPR
±11
MHz offsets from carrier
±22
MHz offsets from carrier
Stability
No modulation
P
IN
= -25 dBm
P
IN
= -25 dBm,
f
IN
= 2400 to 2500 MHz
P
OUT
= 23 dBm, CW
P
OUT
= 23 dBm, 11
Mbps CCK signal, BT =
0.45
P
IN
≤
2 dBm,
P
OUT
= 23 dBm, 11
Mbps CCK signal, BT =
0.45, VSWR = 6:1
P
IN
≤
2 dBm,
P
OUT
= 23 dBm, 11
Mbps CCK signal, BT =
0.45, VSWR = 10:1 All
Phases
Conditions
Min.
2400
-
28
-
-
-
-
-
25.5
31
2.0
-27
-47
-32
-52
Typ.
Max.
2500
-
-
-
-
-
-
-
Unit
MHz
dBm
dB
dB
dBm/MHz
dBm/MHz
dBr
STAB
All non-harmonically related outputs less
than -50 dBc/100 kHz
VSWR
Tolerance to output load
mismatching
No damage
Detector Selection Logic
Conditions:
V
CC
= V
EN
= 3.3V, V
B
= V
REG
, T
A
= 25°C, as measured on SiGe Semiconductor’s SE2525L-EV1
evaluation board, unless otherwise noted
V
DET
IN/DET
SEL
AC Coupled
Ground
AC Coupled
Ground
Detector Slope
Positive
Positive
Negative
Negative
Detector Signal Source
External
Internal
External
Internal
SLOPE
SEL
Open Circuit
Open Circuit
Ground
Ground
28-DST-01
Rev 2.1
Apr-25-2006
Confidential
QA042506
5 of 12
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