SE1050W
LightCharger
™
10 Gb/s Transimpedance Amplifier
Final
Applications
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SONET/SDH-based transmission systems, test
equipment and modules
OC-192 fibre optic modules and line termination
10 Gigabit Ethernet
Fibre Channel
Serial data systems up to 10.7 Gb/s
Product Description
SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance optical
transmitter and receiver functions, from 155 Mb/s up
to 12.5 Gb/s.
SiGe Semiconductor’s SE1050W is a fully integrated
silicon bipolar transimpedance amplifier, providing
wideband, low noise preamplication of signal current
from a PIN photodetector. It features differential
outputs. A decoupling capacitor on the supply is the
only external component required. A system block
diagram is shown after the functional description, on
page 3.
Noise performance is optimized for 10 Gb/s operation,
with a calculated rms noise based sensitivity of
–20 dBm for 10
-10
bit error rate, using a detector with
0.20 pF capacitance and a responsivity of 0.9 A/W,
with an infinite extinction ratio source.
Features
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Single +5 V power supply
Power dissipation = 430 mW (typ)
Input noise current = 1.4
µA
rms when used with
a 0.2 pF detector
Transimpedance gain = 1.2 kΩ into a 50
Ω
load
(differential)
Input current overload = 2.3 mA pk (+1.1 dBm for
0.9 A/W responsivity - meets 10 Gigabit Ethernet
specification)
Wide linear dynamic range of 17 dB (typ)
50
Ω
single-ended or 100
Ω
differential wire bond
selectable outputs
Bandwidth (-3 dB) = 9.8 GHz
Operates at OC-192 / STM-64 up to 10.7 Gb/s
NRZ rates
Power supply rejection for both single ended and
differential modes of operation
Optimized for PIN photodetectors
Minimal external components, supply decoupling
only
Operating junction temperature range = -40°C to
+100°C
Equivalent to Nortel Networks AE99
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Ordering Information
Type
SE1050W
Package
Bare Die
Remark
Shipped in
Waffle Pack
Functional Block Diagram
VCC or +ve supply
Bandgap
Reference
SE1050
TzAmp
10 Gb/s
Input
Current
TZ_IN
1.29 V
Rf
TzAmp
Output
Driver
5
Ω
0
50
Ω
OUTP
OUTN
Power
Supply
Rejection
50
Ω
ACGND
Wire bond option for single
-ended operation
45-DST-01
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Rev 1.5
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SE1050W
LightCharger
™
10 Gb/s Transimpedance Amplifier
Final
Bondpad Diagram
GND
2
TZ_IN
3
GND
1
ACGND
13
12
OUTP
1
11
OUTN
Top
View
4
GND
5
GND
6
GND
7
VCC1
8
VCC1
9
VCC2
10
VCC2
Bondpad Description
Pad No.
1
2
3
4
5
6
7
8
9
10
11
12
13
Name
GND
GND
TZ_IN
GND
GND
GND
VCC1
VCC1
VCC2
VCC2
OUTN
OUTP
ACGND
Negative supply (0V).
Negative supply (0V).
Input pad (connect to photodetector anode).
Negative supply (0V).
Negative supply (0V).
Negative supply (0V).
Positive supply (+5 V).
Positive supply (+5 V).
Positive supply (+5 V) – Note: This is a separate supply for the output driver stage
only.
Positive supply (+5 V) – Note: This is a separate supply for the output driver stage
only.
Negative differential voltage output; leave unconnected for single-ended operation.
Positive differential or single-ended voltage output.
Bond option: Connected to external capacitor to ground for single-ended operation
(recommended 1 nF); unconnected for differential operation.
Description
45-DST-01
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SE1050W
LightCharger
™
10 Gb/s Transimpedance Amplifier
Final
Functional Description
Amplifier Front-End
The transimpedance front-end amplifies the current
from a PIN photodetector, anode connected to pad
TZ_IN, to produce a differential output voltage with
the feedback resistor Rf determining the level of
amplification (see the functional block diagram on
page 1).
The input pad TZ_IN is biased at nominally 1.29 V
above ground, allowing the photodetector to have a
wide reverse-bias by connecting the cathode to VCC.
This enables single rail operation and normally
ensures that the PIN operates in its c
onstant, low-
capacitance region.
The output stage has its own supply connection
VCC2 (+5 V) to maintain integrity of the high-speed
signal path. The output stage shares the GND (0 V)
connection with the remainder of the circuitry, which
has a separate supply connection VCC1 (+5 V).
The output can be configured in a differential or
single-ended mode. For differential operation, the pad
ACGND is not wire bonded and the circuit provides a
fully balanced 100
Ω
output, on the pins OUTP and
OUTN. For single-ended operation, the ACGND pad
is required to be wire bonded to an external capacitor
to ground (recommend 1 nF).
Under these
circumstances, OUTP operates as a single-ended
50
Ω
output. In both cases, increasing optical input
level gives a positive-going output signal on the
OUTP pin.
Power Supply Rejection
An on-chip power supply rejection circuit is used to
achieve both single-ended and differential rejection
from the +5 V VCC rail. This rejection ensures that
performance is not degraded by noise on the power
supply. The circuit achieves a power supply rejection
on the outputs of 38 dB for single-ended and 24 dB
for differential operation, up to 100 kHz. The use of
external decoupling will help to remove any unwanted
signals at higher frequencies.
Output Driver Stage
The output driver acts as a buffer stage, capable of
swinging up to 1.1 V pk-pk differential into a 100
Ω
load.
System Block Diagram
Data
Laser
Driver
Mux
Ck In
SE1150/51/52
Receiver Module
Data
CDR &
Demux
Clock
LOS
SE1250
2
Post
Amplifier
2
SE1050W
TZ
Amplifier
PIN
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SE1050W
LightCharger
™
10 Gb/s Transimpedance Amplifier
Final
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below.
Symbol
VCC
V
IO
I
IO
I
IO
V
ESD
V
ESD
Tstg
Supply Voltage
Voltage at any input or output
Current sourced into any input or output except
TZ_IN
Current sourced into pin TZ_IN
Electrostatic Discharge (100 pF, 1.5 kΩ) except
TZ_IN and ACGND
Electrostatic Discharge (100 pF, 1.5 kΩ) pins
TZ_IN and ACGND
Storage Temperature
Parameter
Min
–0.7
–0.5
–20
–5
–2
–0.25
–65
Max
6.0
VCC+0.5
20
5
2
0.25
150
Unit
V
V
mA
mA
kV
kV
°C
Recommended Operating Conditions
Symbol
VCC
Tj
Supply Voltage
Operating Junction Temperature
Parameter
Min
4.7
–40
Typ
5.0
Max
5.3
100
Unit
V
°C
DC Electrical Characteristics
Symbol
ICC
Vin
Vout
Rout
Supply Current
Input Bias Voltage
Output Bias Voltage
Output Resistance
38
1.28
Parameter
Min
Typ
86
1.29
3.0
50
62
Max
130
1.34
Unit
mA
V
V
Ω
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SE1050W
LightCharger
™
10 Gb/s Transimpedance Amplifier
Final
AC Electrical Characteristics
Symbol
BW (3dB)
Tz
Dri
Voutmax
Flf
PSRR
PSRR
Olim
DR
l
OL
Pol
Nrms
Parameter
Small Signal Bandwidth at –3dB point
Differential Transimpedance (50
Ω
on each output,
f = 100 MHz)
Input Data Rate
Maximum Differential Output Voltage
Low Frequency Cut-off
Power Supply Rejection Ratio (differential) up to
100 kHz
Power Supply Rejection Ratio (single-ended) up to
100 kHz
Onset of Limiting (mean input current from
photodetector)
Linear Dynamic Range (sensitivity to onset of
limiting)
Input Current before overload (10 Gb/s NRZ data)
Optical Overload
Input Noise Current (in 10 GHz)
2300
+1.1
1.4
2.0
16
30
290
37
24
38
460
17
Min
8
0.75
Typ
9.8
1.2
Max
13
1.8
10.7
1.1
47
Unit
GHz
kΩ
Gb/s
V pk-pk
kHz
dB
dB
µA
mean
dB
µA
pk-pk
dBm
µA
rms
DC and AC electrical characteristics are specified under the following conditions:
Supply Voltage (VCC).........................................4.7 V to 5.3 V
Junction Temperature (Tj)..................................–40°C to 100°C
Load Resistor (R
L
)...............................................50
Ω
AC coupled via 100 nF, for each output
Photodetector Capacitance (Cd)......................0.2 pF
Input bond wire inductance (Li) ........................1.1 nH
(Must comply with recommended bonding arrangement that will be provided as an application note)
Photodetector responsivity ................................0.9 A/W
Photodetector series resistance........................10
Ω
max
Transimpedance (Tz) measured with 0 > lin < 580
µA
pk-pk, at 100 MHz
45-DST-01
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Rev 1.5
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May 24/02
5 of 11
stm32/stm8
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