SE2425U
RangeCharger
TM
2.4 GHz Bluetooth Power Amplifier IC
Preliminary Information
Applications
Bluetooth
tm
wireless technology (Class 1)
USB dongles, PCMCIA, flash cards, Access Points
Enhanced data rate
Product Description
A monolithic, high-efficiency, silicon-germanium power
amplifier IC, the SE2425U is designed for 2.4 GHz
wireless applications, including Bluetooth
TM
Class 1
basic rate and enhanced data rate applications. It
delivers +25 dBm output power in standard rate GFSK
mode and +19.5 dBm output power in enhanced rate
8DPSK.
The SE2425U provides a digital mode control input for
boosting the linear performance for enhanced data rate
applications.
The SE2425U operates at 3.3 V DC with a peak
efficiency of 43 % in basic rate and 21 % in enhanced
rate mode. The internal bias management allows the
part to only draw 28 mA in Class 2 output power levels.
Output match integrates the high Q inductors to reduce
component count and bill of materials. It uses two
external capacitors to allow for varying loads, such as
switches and filters, in different applications.
The silicon/silicon-germanium structure of the
SE2425U, and its exposed die-pad package, soldered
to the system PCB, provide high thermal conductivity
and a subsequently low junction temperature. This
device is capable of operating at a duty cycle of 100
percent.
Features
Integrated input and inter-stage match
+25 dBm GFSK Output Power
+19.5 dBm 8DPSK Output Power
Low current: 110 mA typical @ P
OUT
= +20 dBm
Ultra low quiescent current: 28 mA
Digital Enable for direct interface to standard
CMOS processors
Mode-control for easy switching between standard
and EDR modes
Gain: 29 dB
3.3 V single supply operation
Ordering Information
Type
SE2425U
SE2425U-R
SE2425U-EK1
Package
3 x 3 x 0.5 mm QFN
3 x 3 x 0.5 mm QFN
N/A
Remark
Sample
Tape & Reel
Evaluation Kit
Functional Block Diagram
EN
(4)
MODE
(5)
VCC0
(2)
VCC1
( 16 )
VCC2
( 15 )
VCC3
( 14 )
Digital Bias & Enable Logic
RF IN
(1)
Input
Match
Inter-
Stage
Match
Inter-
Stage
Match
RF OUT
(7)
SiGe SE2425U
GND
( Paddle )
Figure 1: SE2425U Block Diagram
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
1 of 10
SE2425U
RangeCharger
TM
2.4 GHz Bluetooth Power Amplifier IC
Preliminary Information
Pin-Out Diagram
SE2425U
Top View
VCC1
VCC2
VCC3
14
N/C
13
12
11
10
GND Pad
EN
4
5
6
7
8
9
N/C
16
1
2
3
15
RFIN
VCC0
N/C
N/C
N/C
CAP
N/C
MODE
Figure 2: SE2425U Pin-Out
Pin Out Description
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
GND Pad
Name
RF
IN
V
CCO
N/C
EN
MODE
N/C
RF
OUT
N/C
N/C
CAP
N/C
N/C
N/C
V
CC3
V
CC2
V
CC1
GND
Description
Power amplifier RF input, DC blocking is required
Bias Power Supply
Do Not Connect
PA Enable
Mode switch
Do Not Connect
RF output
Note: Requires external DC blocking and optional shunt capacitor (typically 0p75 0402)
Do Not Connect
Do Not Connect
Matching capacitor (typically 1p3 0402)
Do Not Connect
Do Not Connect
Do Not Connect
Stage 3 collector supply voltage
Stage 2 collector supply voltage
Stage 1 collector supply voltage
Heat slug Ground Pad
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
RFOUT
N/C
2 of 10
SE2425U
RangeCharger
TM
2.4 GHz Bluetooth Power Amplifier IC
Preliminary Information
Absolute Maximum Ratings
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This device is
ESD sensitive. Handling and assembly of this device should be at ESD protected workstations.
Symbol
V
CC
V
EN
IN
T
C
T
STG
T
j
Supply Voltage
Enable Voltage
RF Input Power
Parameter
Min.
-0.3
-0.3
-
-40
-40
-
Max.
+4.2
V
CC
0
+85
+150
+150
Unit
V
V
dBm
°C
°C
°C
Case Temperature Range
Storage Temperature Range
Maximum Junction Temperature
DC Electrical Characteristics
Conditions:
Symbol
V
CC
Supply Voltage
Supply Current V
MODE
= Low, P
OUT
= 20 dBm
I
CC
Supply Current V
MODE
= Low, No RF
Supply Current V
MODE
= High, No RF
Supply Current V
MODE
= High, P
OUT
= 19.5 dBm
I
EN
I
MODE
V
LOGIC
I
stdby
Current sunk by EN pin (logic high)
Current sunk by MODE pin (logic high)
Logic High Voltage
Logic Low Voltage
Leakage Current when V
EN
= V
MODE
= 0 V, No RF
V
CC0
= V
CC1
= V
CC2
= V
CC3
= 3.3 V, T
C
= 25
°C,
f = 2.45 GHz, as measured on SiGe Semiconductor’s
SE2425U-EV1 evaluation board unless otherwise noted.
Parameter
Min.
2.7
-
-
-
-
-
-
2.0
0
-
Typ.
3.3
110
28
81
123
-
-
2.8
-
1
Max.
3.6
-
-
-
-
1
1
3.3
0.8
10
Unit
V
mA
mA
mA
mA
µA
µA
V
V
µA
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
3 of 10
SE2425U
RangeCharger
TM
2.4 GHz Bluetooth Power Amplifier IC
Preliminary Information
AC Electrical Characteristics
Conditions:
V
EN
= V
CC0
= V
CC1
= V
CC2
= V
CC3
= 3.3 V, V
MODE
= Low, P
IN
= -6 dBm, T
C
= 25
°C,
f = 2.45 GHz, as
measured on SiGe Semiconductor’s SE2425U-EV1 evaluation board, unless otherwise noted
Standard Rate Mode
Symbol
f
L-U
P
OUT_MAX
∆P
temp
G
G
VAR
2f
3f
IS
11
I
IS
21
I
OFF
IS
12
I
STAB
Frequency Range
Maximum Output Power (P
IN
= 0 dBm)
Output Power variation over temperature
(-40
°C
< T
A
<+85
°C)
Gain @ P
IN
= -25 dBm
Gain @ P
IN
= -6 dBm
Gain Variation over band (2400-2500 MHz)
Harmonics
-
Isolation in “OFF” State, V
EN
= 0 V
Reverse Isolation
Stability (P
IN
= -6 dBm, Load VSWR = 4:1)
Parameter
Min.
2400
-
-
-
-
-
-
10
-
-
Typ.
-
25
0.5
29.5
28.5
0.1
-40
-41
-
36
42
Max.
2500
-
-
-
1.0
-
-
-
-
-
Unit
MHz
dBm
dB
dB
dB
dBc
dB
dB
dB
All non-harmonically related outputs less than
-50 dBc
Conditions:
V
EN
= V
CC0
= V
CC1
= V
CC2
= V
CC3
= 3.3 V, V
MODE
= High, T
C
= 25
°C,
f = 2.45 GHz, as measured on SiGe
Semiconductor’s SE2425U-EV1 evaluation board, unless otherwise noted.
Enhanced Rate Mode
Symbol
P
OUT_MAX
∆P
temp
G
G
VAR
ACPR1
Parameter
Output Power (Meets ACPR1/2 specification)
Output Power variation over temperature
(-40
°C
< T
A
< +85
°C)
for P
IN
=-15 dBm
Gain @ P
IN
= -25 dBm
Gain Variation over band, P
IN
= -25 dBm
2 Mbps,
π/4-DQPSK,
F
C
± 2 MHz, BW = 1 MHz
3 Mbps, 8DPSK, F
C
± 2 MHz, BW = 1 MHz
2 Mbps,
π/4-DQPSK,
F
C
± 3 MHz, BW = 1 MHz
3 Mbps, 8DPSK, F
C
± 3 MHz, BW = 1 MHz
Min.
-
-
-
-
-
-
-
-
Typ.
19.5
1.5
30.5
0.1
-
-
-
-
Max.
-
-
-
-
-20
-20
-40
-40
Unit
dBm
dB
dB
dB
dBm
dBm
dBm
dBm
ACPR2
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
4 of 10
SE2425U
RangeCharger
TM
2.4 GHz Bluetooth Power Amplifier IC
Preliminary Information
Typical Performance Characteristics
Low Mode
Test Conditions: V
EN
= V
CC0
= V
CC1
= V
CC2
= V
CC3
= 3.3 V, MODE = Low, T
C
= 25
°C,
f = 2.45 GHz, as measured on
SiGe’s SE2425U-EV1 evaluation board otherwise noted
Output Power vs. Input Power
(25 C, 3.3 V, 2.45 GHz, Low Mode)
25
0.25
Icc vs. Output Power
(25C, 3.3 V, 2.45 GHz, Low Mode)
20
Output Power (dBm)
0.2
10
ICC (A)
15
0.15
0.1
5
0.05
0
-30
0
-25
-20
-15
Input Pow er (dBm )
-10
-5
0
0
5
10
15
20
25
Output Pow er (dBm )
Figure 3: Typical Performance Data in Low Mode (a) Output Power vs. Input Power, (b) Current vs. Output
Power
2MBit ACPR 2MHz Offset over Output Power
(25 C, 2.45 GHz, Low Mode)
2.7V, -2MHz
3.3V, -2MHz
3.6V, -2MHz
-14
-16
ACPR (dBm)
-18
-20
-22
-24
-26
-28
-30
-32
-34
16
17
18
19
Output Pow er (dBm )
20
21
2.7V, +2MHz
3.3V, +2MHz
3.6V, +2MHz
2MBit ACPR 3MHz Offset vs. Output Power over Voltage
(25 C, 2.45 GHz, Low Mode)
2.7V, -3MHz
3.3V, -3MHz
3.6V, -3MHz
-36
-38
ACPR (dBm)
-40
-42
-44
-46
-48
-50
-52
-54
-56
14
15
16
17
18
19
Output Pow er (dBm )
2.7V, +3MHz
3.3V, +3MHz
3.6V, +3MHz
Figure 4: Typical 2 Mbps Enhanced Data Rate (EDR) Performance Data in Low Mode (a) ACPR @ 2 MHz
Offset vs. Output Power over Voltage (b) ACPR @ 3 MHz Offset vs. Output Power over voltage
3MBit ACPR 2MHz Offset vs. Output Power over Voltage
(25 C, 2.45 GHz, Low Mode)
2.7V, -2MHz
3.3V, -2MHz
3.6V, -2MHz
-14
-16
ACPR (dBm)
-18
-20
-22
-24
-26
-28
-30
-32
-34
16
17
18
19
20
21
Output Pow er (dBm )
2.7V, +2MHz
3.3V, +2MHz
3.6V, +2MHz
3MBit ACPR 3MHz Offset vs. Output Power over Voltage
(25 C, 2.45 GHz, Low Mode)
2.7V, -3MHz
3.3V, -3MHz
3.6V, -3MHz
-36
-38
ACPR (dBm)
-40
-42
-44
-46
-48
-50
-52
-54
-56
14
15
16
17
18
19
Output Pow er (dBm )
2.7V, +3MHz
3.3V, +3MHz
3.6V, +3MHz
Figure 5: Typical 3 Mbps Enhanced Data Rate (EDR) Performance Data in Low Mode (a) ACPR @ 2 MHz
Offset vs. Output Power over Voltage (b) ACPR @ 3 MHz Offset vs. Output Power over voltage
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
5 of 10
微控制器 MCU
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