Product Description
Stanford Microdevices’ SNA-676 is a high-performance
GaAs Heterojunction Bipolar Transistor (MMIC) housed in a
low-cost surface mountable stripline package. A Darlington
configuration is utilized for broadband performance to 6.5
GHz.
These unconditionally stable amplifiers provide 11dB of gain
and +18dBm of P1dB when biased at 5.7V and 70mA. This
MMIC requires only a single suply voltage. The use of an
external resistor allows for bias flexibility and stability.
Also available in chip form (SNA-600), its small size (0.4mm
x 0.4mm) and gold metallization make it an ideal choice for
use in hybrid circuits.
The SNA-676 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
SNA-676
DC-6.5 GHz, Cascadable
GaAs MMIC Amplifier
Output Power vs. Frequency
22
20
18
Product Features
•
Cascadable 50 Ohm Gain Block
•
11dB Gain, +18dBm P1dB
•
High Linearity, +36dBm TOIP Typ.
•
1.5:1 Input and Output VSWR
•
Operates From a Single DC Supply
•
Low Cost Stripline Mount Ceramic Package
50 Ohm Gain Blocks
Applications
•
Narrow and Broadband Linear Amplifiers
•
Commercial and Industrial Applications
dBm
16
14
12
0.1
1
2
3
4
5
6
7
8
GHz
Electrical Specifications at Ta = 25C
Sym bol
P a r a m e te r s : T e s t C o n d itio n s :
Id = 7 0 m A , Z
0
= 5 0 O h m s
S m a ll S ig n a l G a in
3 d B B a n d w id th
O u tp u t P o w e r a t 1 d B C o m p re s s io n
f = 0 .1 -2 .0 G H z
f = 2 .0 -6 .5 G H z
f = 0 .1 -4 .0 G H z
f = 4 .0 -6 .5 G H z
f = 0 .1 -6 .5 G H z
f = 0 .1 -2 .0 G H z
f = 2 .0 G H z
f = 0 .1 -6 .5 G H z
dBm
psec
dB
V
d B /d e g C
m V /d e g C
4 .8
f = 0 .1 -4 .0 G H z
f = 4 .0 -6 .5 G H z
U n its
dB
dB
GHz
dBm
M in .
9 .0
8 .0
Ty p .
11 .0
9 .0
6 .5
1 8 .0
1 6 .0
7 .5
8 .5
1 .5 :1
3 6 .0
120
1 7 .0
5 .7
-0 .0 0 2 3
-5 .0
6 .8
M ax.
G
P
BW 3dB
P
1dB
NF
VSW R
IP
T
3
N o is e F ig u r e
In p u t / O u tp u t
T h i r d O r d e r I n t e r c e p t P o in t
G r o u p D e la y
R e v e r s e Is o la tio n
D e v ic e V o lta g e
D e v i c e
G a i n
T e m p e r a t u r e C o e ff i c i e n t
D e v i c e V o l t a g e T e m p e r a t u r e C o e ff i c i e n t
dB
D
IS O L
VD
d G /d T
d V /d T
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-89
SNA-676 DC-6.5 GHz Cascadable MMIC Amplifier
Typical Performance at 25
°
C (Vds = 5.7V, Ids = 70mA)
|S11| vs. Frequency
-5
-10
-15
12
10
|S21| vs. Frequency
dB
-20
-25
-30
0.1
1
2
3
4
5
6
7
8
dB
8
6
4
0.1
1
2
3
4
5
6
7
8
GHz
GHz
|S12| vs. Frequency
0
-5
-10
-5
-10
-15
|S22| vs. Frequency
dB
-15
-20
-25
0.1
1
2
3
4
5
6
7
8
dB
-20
-25
-30
0.1
1
2
3
4
5
6
7
8
GHz
GHz
50 Ohm Gain Blocks
Noise Figure vs. Frequency
10
9
8
38
36
34
TOIP vs. Frequency
dB
dB
7
6
5
0.1
1
2
3
4
5
6
6.5
32
30
28
0.1
1
2
3
4
5
6
7
8
GHz
GHz
Typical S-Parameters Vds = 5.7V, Ids = 70mA
F req
G H z
|S 1 1 |
S 11
A n g
|S 2 1 |
S 2 1
A n g
|S 1 2 |
S 1 2
A n g
|S 2 2 |
S 2 2
A n g
.1 0 0
.2 5 0
.5 0 0
1 .0 0
1 .5 0
2 .0 0
2 .5 0
3 .0 0
3 .5 0
4 .0 0
4 .5 0
5 .0 0
5 .5 0
6 .0 0
6 .5 0
0 .1 5 2
0 .1 4 6
0 .1 3 1
0 .11 0
0 .0 8 5
0 .0 7 2
0 .0 7 7
0 .1 0 7
0 .1 4 3
0 .1 6 8
0 .1 7 3
0 .1 4 1
0 .0 7 9
0 .0 3 8
0 .0 7 9
-1 4
-2 5
-4 2
-8 3
-1 3 0
178
109
52
0
-4 4
-9 0
-1 4 2
169
62
-5 7
3 .6 2 4
3 .6 0 2
3 .5 4 9
3 .5 8 3
3 .5 6 7
3 .5 4 1
3 .5 1 2
3 .4 2 7
3 .4 0 1
3 .2 9 0
3 .2 8 0
3 .1 0 4
2 .9 2 9
2 .6 5 8
2 .3 5 9
152
145
140
102
59
21
-2 2
-6 4
-1 0 6
-1 4 4
175
128
87
47
1
0 .0 9 5
0 .1 3 9
0 .1 4 9
0 .1 4 8
0 .1 4 6
0 .1 4 5
0 .1 4 1
0 .1 3 6
0 .1 3 2
0 .1 2 8
0 .1 2 4
0 .1 2 4
0 .1 2 3
0 .1 2 1
0 .11 9
-4
-1 0
-3 0
-5 9
-9 0
-1 2 0
-1 5 2
180
147
11 8
88
60
29
0
-3 5
0 .1 9 8
0 .2 0 5
0 .2 4 7
0 .2 2 2
0 .1 9 8
0 .1 9 3
0 .2 0 3
0 .2 2 2
0 .2 4 8
0 .2 7 0
0 .2 8 8
0 .2 8 5
0 .2 7 6
0 .2 5 9
0 .3 2 2
-4
-2 6
-5 6
-11 2
-1 7 9
120
54
1
-6 0
-11 7
177
11 7
51
-1 0
-7 6
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-90
SNA-676 DC-6.5 GHz Cascadable MMIC Amplifier
Absolute Maximum Ratings
P a r am e te r
A b s o lu te
M a xim u m
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
SNA-676-TR1
D e vic e Cu rren t
Po w e r D is sip a tio n
R F In pu t P ow e r
Ju n ctio n Tem p era tu re
O p e ratin g Te m p e ra tu re
Sto ra g e Te m p e ra ture
11 0m A
7 00 m W
2 00 m W
+2 0 0 C
-4 5 C to +8 5C
-6 5 C to +1 50 C
SNA-676-TR2
SNA-676-TR3
1000
3000
5000
7"
13"
13"
R e c o m m e n d e d B ia s R e s is to r Va lu e s
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
Supply
Voltage(Vs)
R bias (O hm s)
5V
*
7.5V
24
9V
46
12V
89
15V
131
20V
203
** Not Recommended
MTTF vs. Temperature @ Id = 70mA
Lead Temperature
Junction
Temperature
+155C
MTTF (hrs)
+55C
1000000
+90C
+190C
100000
+120C
+220C
10000
50 Ohm Gain Blocks
Thermal Resistance (Lead-Junction): 250° C/W
Typical Biasing Configuration
Pin Designation
1
2
3
4
RF in
GND
RF out
and Bias
GND
Typical Performance at 25
°
C
Power Gain vs. Device Current
20mA Steps
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
0.1
1.0
2.0
3.0
4.0
5.0
6.0
5.5
5
50
55
60
65
70
75
80
80mA
Device Voltage vs. Id
7
6.5
dB
40mA
Vdc
6
GHz
mA
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-91
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