S
D
S
ARF1505
ARF1505
BeO
1525-xx
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
S
G
S
300V
750W
40MHz
The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial,
medical and industrial RF power generator and amplifier applications up to 40 MHz.
•
Specified 300 Volt, 27.12 MHz Characteristics:
•
Output Power = 750 Watts.
•
Gain = 17dB (Class C)
•
Efficiency > 75%
• RoHS Compliant
•
High Performance Power RF Package.
•
Very High Breakdown for Improved Ruggedness.
•
Low Thermal Resistance.
•
Nitride Passivated Die for Improved Reliability.
All Ratings: T
C
= 25°C unless otherwise specified.
ARF1505
UNIT
Volts
Amps
Volts
Watts
°C
MAXIMUM RATINGS
Symbol
V
DSS
I
D
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Device Dissipation @ T
C
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
1200
25
±30
1500
-55 to 175
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
isolation
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
μA)
On State Drain Voltage
1
MIN
TYP
MAX
UNIT
Volts
μA
nA
mhos
Volts
1200
8
9.5
100
1000
±400
5.5
TBD
3
5
6
(I
D
(ON)
= 12.5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 12.5A)
RMS Voltage
(60Hz Sinewave from terminals to mounting surface for 1 minute)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
Volts
THERMAL CHARACTERISTICS
Symbol Characteristic (per package unless otherwise noted)
R
θJC
R
θJHS
Junction to Case
Junction to Sink
(Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
UNIT
°C/W
050-4922 Rev F 10-2008
0.10
0.16
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 200V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6Ω
MIN
TYP
MAX
ARF1505
UNIT
5400
300
125
8
5
25
13
6500
400
160
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
η
Ψ
1
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 10:1
Test Conditions
f = 27.12 MHz
V
GS
= 0V
V
DD
= 300V
MIN
TYP
MAX
UNIT
dB
%
15
70
17
75
P
out
= 750W
No Degradation in Output Power
Pulse Test: Pulse width < 380
μS,
Duty Cycle < 2%.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
20,000
10,000
5000
CAPACITANCE (pf)
C
iss
1000
500
C
oss
C
rss
100
.1
1
10
100 200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
60
I
D
, DRAIN CURRENT (AMPERES)
50
40
30
20
10
0
T
J
= +25°C
T
J
= +125°C
0
2
4
6
8
10
12
14
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Transfer Characteristics
I
D
, DRAIN CURRENT (AMPERES)
V
DS
> I
D
(ON) x R
DS
(ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
100
DATA FOR BOTH SIDES
IN PARALLEL
100us
50
OPERATION HERE
LIMITED BY R
(ON)
DS
T
J
= -55°C
1ms
10
5
T
C
=+25°C
T
J
=+200°C
SINGLE PULSE
050-4922 Rev F 10-2008
10ms
100ms
1
1
5 10
50 100
1200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Maximum Safe Operating Area
1.15
I
D
, DRAIN CURRENT (AMPERES)
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-50 -25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
Figure 4, Typical Threshold Voltage vs Temperature
0.12
35
V
GS
= 10 & 9V
30
25
20
15
10
5V
5
0
7V
8V
ARF1505
6V
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5, Typical Output Characteristics
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.10
0.08
0.06
0.04
0.02
0
D = 0.9
0.7
0.5
0.3
0.1
0.05
10
-5
10
-4
Note:
PDM
t1
t2
SINGLE PULSE
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
1.0
F (MHz)
TYPICAL LARGE SIGNAL
INPUT - OUPUT
IMPEDANCE
CHARACTERISTICS
2.0
13.5
27
40
Zin (Ω)
5.4 - j 9.6
0.30 - j 1.2
0.26 + j .58
0.36 + j 1.6
Clamp
Z
OL
(Ω)
46 - j 10.5
16.4 - j 23
4.9 - j 14.6
2.3 - j 10.3
Zin - Gate shunted with 25Ω
Z
OL
- Conjugate of optimum
load for 750 Watts output
I
DQ
= 100mA
Vdd = 300V
1.065
.250
S
D
S
.500
Heat Sink
Thermal Considerations and Package Mounting:
The rated 1500W power dissipation is only available
when the package mounting surface is at 25°C and the
junction temperature is 175°C. The thermal resis-
tance between junctions and case mounting surface
is 0.10°C/W. When installed, an additional thermal
impedance of 0.06°C/W between the package base and
the mounting surface is smooth and
fl
at. Thermal joint
compound must be used to reduce the effects of small
surface irregularities. The heatsink should incorporate a
copper heat spreader to obtain best results.
The package is designed to be clamped to a heatsink. A
clamped joint maintains the required mounting pressure
while allowing for thermal expansion of both the device
and the heat sink. A simple clamp, and two 6-32 (M3.5)
screws can provide the minimum 125 lb. required
mounting force. T=4-6 in-lb. Please refer to App Note
1802 "Mounting Instructions for Flangeless Packages."
ARF15--
BeO
1525-xx
1.065
.045
S
G
S
.500
.005
.207
.375
.105 typ.
.207
HAZARDOUS MATERIAL WARNING
D
G
S
The ceramic portion of the device between
leads and mounting surface is beryllium oxide,
BeO. Beryllium oxide dust is toxic when in-
haled. Care must be taken during handling
and mounting to avoid damage to this area .
These devices must never be thrown away
with general industrial or domestic waste.
050-4922 Rev F 10-2008
A RF1505 -- 27.12 MHz Test Circ uit
300V
L4
C7
C6
L2
L1
C1
RF
Input
C2
C3
C 11
R2
T L1
R1
V bias
R3
C4
C 12
C5
C9
L3
C 8 C 10
Output
C1, C7, C8, C11 .047mF 500V cerami disc
C2, C12 Arco 465 75-380pF mica trimmer
C3 2x 4700pF ATC 700B
C4, C9-C10 8200pF 500V NPO ceramic
C5 200pF ATC 100E
C6 150pF ATC 700B
L1 90nH 4t # 18 0.25"d .25"I
L2 200nH - 3t # 8 1" dia 1"I
L3 6μH - 22t # 24 enam 0.5"dia
L4 500nH 2t on 850μ .5" bead
R1-R3 1KΩ 1/4W
TL1 .112" x 1" (50Ω) Stripline
B eO
ARF 1505
A RF 1500
201
135-05
J1
J2
27 MHz Amp ARF1505
R F 11-04
050-4922 Rev F 10-2008
27 MHz Amp ARF1505
R F 11-04
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