Product Description
Stanford Microdevices’ SNA-276 is a GaAs monolithic
broadband amplifier (MMIC) housed in a low-cost surface
mountable stripline package. This amplifier provides 16dB of
gain when biased at 50mA and 4V.
External DC decoupling capacitors determine low frequency
response. The use of an external resistor allows for bias
flexibility and stability.
These unconditionally stable amplifiers are designed for use
as general purpose 50 ohm gain blocks. Also available in
chip form (SNA-200), its small size (0.33mm x 0.33mm) and
gold metallization, make it an ideal choice for use in hybrid
circuits.
The SNA-276 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
SNA-276
DC-6.5 GHz, Cascadable
GaAs MMIC Amplifier
Output Power vs. Frequency
16
15
Product Features
•
Cascadable 50 Ohm Gain Block
•
16dB Gain, +14dBm P1dB
•
1.5:1 Input and Output VSWR
•
Operates From Single Supply
•
Low Cost Stripline Mount Ceramic Package
•
Hermetically Sealed
50 Ohm Gain Blocks
Applications
•
Narrow and Broadband Linear Amplifiers
•
Commercial and Industrial Applications
dBm
14
13
12
0.5
1
1.5
2
4
6
8
10
GHz
Electrical Specifications at Ta = 25° C
°
S ym bol
P a r a m e te r s : T e s t C o n d it io n s :
Id = 5 0 m A , Z
0
= 5 0 O h m s
S m a ll S ig n a l P o w e r G a in
f = 0 .1 -2 .0 G H z
f = 2 .0 -4 .0 G H z
f = 4 .0 -6 .5 G H z
f = 0 .1 -4 .0 G H z
U n its
dB
dB
dB
dB
GHz
f = 2 .0 G H z
f = 2 .0 G H z
f = 0 .1 -6 .5 G H z
f = 2 .0 G H z
f = 2 .0 G H z
f = 0 .1 -6 .5 G H z
dBm
dB
M in .
1 5 .0
1 4 .0
1 3 .0
Ty p .
1 6 .0
1 5 .0
1 4 .0
+ /1 .0
6 .5
1 4 .0
5 .5
1 .5 :1
2 7 .0
100
20
3 .5
4 .0
-0 .0 0 1 8
-4 .0
4 .5
6 .0
M ax.
G
P
G
F
G a in F la tn e s s
3 d B B a n d w id th
O u tp u t P o w e r a t 1 d B C o m p re s s io n
N o is e F ig u r e
In p u t/O u tp u t
T h ir d O r d e r I n t e r c e p t P o i n t
G ro u p D e la y
BW 3dB
P
1dB
NF
VSW R
IP
T
3
-
dBm
psec
dB
V
D
IS O L
V
D
R e v e r s e Is o l a t i o n
D e v ic e V o lta g e
D e v i c e G
a i n
T e m p e r a tu r e C o e ff i c i e n t
D e v i c e V o l t a g e Te m p e r a t u r e
C o e f fi c i e n t
d G /d T
d V /d T
d B
/d e g C
m V /d e g C
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-25
SNA-276 DC-6.5 GHz Cascadable MMIC Amplifier
|S11| vs. Frequency
0
-5
-10
18
17
16
|S21| vs. Frequency
dB
-15
-20
-25
-30
0.1
0.5
1
1.5
2
3
4
6
dB
15
14
13
12
0.1
0.5
1
1.5
2
4
6
GHz
GHz
|S12| vs. Frequency
0
-5
-10
0
-5
|S22| vs. Frequency
dB
-15
-20
-25
0.1
0.5
1
1.5
2
4
6
8
10
dB
-10
-15
-20
0.1
0.5
1
1.5
2
4
6
8
10
GHz
GHz
50 Ohm Gain Blocks
Noise Figure vs. Frequency
8
7.5
27
28
TOIP vs. Frequency
7
dB
6.5
6
5.5
5
0.1
0.5
1
1.5
2
4
6
8
10
dBm
26
25
24
0.1
0.5
1
1.5
2
4
6
8
10
GHz
GHz
Typical S-Parameters Vds = 4.0V, Ids = 50mA
F re q G H z
.1 0 0
.2 5 0
.5 0 0
1 .0 0
1 .5 0
2 .0 0
4 .0 0
6 .0 0
8 .0 0
1 0 .0 0
|S 11 |
0 .11 4
0 .1 4 5
0 .1 5 2
0 .1 7 1
0 .1 8 2
0 .1 7 0
0 .0 8 7
0 .1 3 0
0 .2 0 8
0 .3 9 1
S 11 A n g
157
135
11 4
57
1
-5 0
38
-7 6
-1 3 2
-1 4 9
|S 2 1 |
6 .8 8 5
6 .7 8 5
6 .6 5 9
6 .4 6 7
6 .2 5 9
6 .1 0 3
5 .1 3 0
4 .1 0 7
3 .6 8 8
2 .9 6 2
S21 Ang
166
142
139
101
60
22
-1 3 2
81
-7 2
11 8
|S 1 2 |
0 .0 8 2
0 .0 9 8
0 .1 0 6
0 .1 0 6
0 .1 0 6
0 .1 0 8
0 .11 4
0 .111
0 .1 0 8
0 .0 8 1
S12 Ang
-7
-1 4
-2 8
-5 3
-8 3
-1 0 9
132
12
-11 9
99
|S 2 2 |
0 .0 8 3
0 .0 9 5
0 .11 7
0 .1 4 1
0 .1 6 6
0 .1 7 3
0 .1 4 6
0 .2 6 0
0 .1 0 3
0 .3 4 6
S22 Ang
145
126
11 5
62
5
-4 6
73
-1 0 8
-2 2
177
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-26
SNA-276 DC-6.5 GHz Cascadable MMIC Amplifier
Absolute Maximum Ratings
P a r a m ete r
A b s o lu te
M a xim u m
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
SNA-276-TR1
SNA-276-TR2
1000
3000
5000
7"
13"
13"
D e vic e C urre nt
Po w e r D issipa tion
R F In p ut Po w er
Ju n ction Te m p e ra ture
O p e ra tin g Te m p e ra tu re
Sto ra g e Te m pe ra tu re
70mA
3 2 0m W
1 0 0m W
+2 0 0 C
-4 5 C to +8 5 C
-6 5 C to +1 5 0 C
R e c o m m e n d e d B ia s R e s is to r Va lu e s
SNA-276-TR3
Supply
Voltage(Vs)
R bias (O hm s)
5V
20
7.5V
70
9V
100
12V
160
15V
220
20V
320
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
MTTF vs. Temperature @ Id = 50mA
Lead Temperature
Junction
Temperature
+155C
MTTF (hrs)
+45C
1000000
+80C
+190C
100000
+110C
+220C
10000
50 Ohm Gain Blocks
Thermal Resistance (Lead-Junction): 556° C/W
Typical Biasing Configuration
Pin Designation
1
2
3
4
RF in
GND
RF out and
Bias
GND
Typical Performance at 25
°
C
Power Gain vs. Device Current
17
16
5
4.5
60mA
50mA
Device Voltage vs. Id
dB
15
14
13
12
0.2
0.5
1.0
1.25
1.5
1.75
Vd
4
3.5
3
40mA
30mA
25mA
2.0
25
30
40
50
60
70
80
GHz
mA
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-27
Microchip MCU
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