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© Nexperia B.V. (year). All rights reserved.
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PESD12VV1BL
14 October 2016
Very low capacitance bidirectional ESD protection diode
Product data sheet
1. General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to
protect one signal line from the damage caused by ESD and other transients. The device is housed
in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
•
•
Bidirectional ESD protection of one line
Low diode capacitance C
d
= 17 pF
Rated peak pulse power: P
PPM
= 290 W
Ultra low leakage current I
RM
< 1 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PPM
= 7.8 A
AEC-Q101 qualified
3. Applications
•
•
•
•
•
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Portable electronics
Communication systems
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RWM
C
d
Parameter
reverse standoff
voltage
diode capacitance
Conditions
T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
Min
-
-
Typ
-
17
Max
12
25
Unit
V
pF
NXP Semiconductors
PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin
1
2
Symbol Description
K
K
cathode
cathode
1
2
Simplified outline
Graphic symbol
1
sym045
2
Transparent
top view
DFN1006-2 (SOD882)
6. Ordering information
Table 3. Ordering information
Type number
PESD12VV1BL
Package
Name
DFN1006-2
Description
DFN1006-2: leadless ultra small plastic package; 2 terminals
Version
SOD882
7. Marking
Table 4. Marking codes
Type number
PESD12VV1BL
Marking code
MW
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PPM
I
PPM
T
j
T
amb
T
stg
V
ESD
Parameter
rated peak pulse power
rated peak pulse current
junction temperature
ambient temperature
storage temperature
electrostatic discharge
voltage
IEC 61000-4-2; contact discharge
machine model
human body model (MIL-STD-883)
[1]
[2]
Conditions
[1]
t
p
= 8/20 µs
[1]
Min
-
-
-
-55
-65
[2]
-
-
-
Max
290
7.8
150
150
150
30
400
10
Unit
W
A
°C
°C
°C
kV
V
kV
ESD maximum ratings
Device stressed with non-repetitive current pulses (8/20 µs exponential decay waveform according to IEC 61000-4-5 and IEC
61643-321).
Device stressed with ten non-repetitive ESD pulses.
PESD12VV1BL
All information provided in this document is subject to legal disclaimers.
©
NXP Semiconductors N.V. 2016. All rights reserved
Product data sheet
14 October 2016
2 / 11
NXP Semiconductors
PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
120
I
PP
(%)
80
100 % I
PP
; 8 µs
001aaa630
001aaa631
I
PP
100 %
90 %
e
-t
50 % I
PP
; 20 µs
40
10 %
0
0
10
20
30
40
t
p
(µs)
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
Fig. 1.
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
9. Characteristics
Table 6. Characteristics
Symbol
V
RWM
V
BR
I
RM
C
d
V
CL
R
dyn
[1]
[2]
Parameter
reverse standoff
voltage
breakdown voltage
reverse leakage
current
diode capacitance
clamping voltage
dynamic resistance
Conditions
T
amb
= 25 °C
I
R
= 5 mA; T
amb
= 25 °C
V
RWM
= 12 V; T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
I
PP
= 1 A; T
amb
= 25 °C
I
PPM
= 7.8 A; T
amb
= 25 °C
I
R
= 10 A; T
amb
= 25 °C
[1]
[1]
[2]
Min
-
14.6
-
-
-
-
-
Typ
-
15.7
1
17
-
-
0.7
Max
12
16.8
10
25
22
38
-
Unit
V
V
nA
pF
V
V
Ω
Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse; ANSI / ESD STM5.5.1-2008.
PESD12VV1BL
All information provided in this document is subject to legal disclaimers.
©
NXP Semiconductors N.V. 2016. All rights reserved
Product data sheet
14 October 2016
3 / 11
NXP Semiconductors
PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
10
3
P
PP
(W)
10
2
aaa-002723
C
d
(pF)
20
aaa-002724
15
10
10
5
1
10
-4
10
-3
t
p
(s)
10
-2
0
0
2
4
6
8
10
V
R
(V)
12
T
amb
= 25 °C
Fig. 3.
Rated peak pulse power as a function of square Fig. 4.
pulse duration; maximum values
I
PPM
I
PP
f = 1 MHz; T
amb
= 25 °C
Diode capacitance as a function of reverse
voltage; typical values
-V
CL
-V
BR
-V
RWM
I
R
I
RM
-I
RM
-I
R
V
RWM
V
BR
V
CL
-
+
-I
PP
-I
PPM
006aab325
Fig. 5.
V-I characteristics for a bidirectional ESD protection diode
PESD12VV1BL
All information provided in this document is subject to legal disclaimers.
©
NXP Semiconductors N.V. 2016. All rights reserved
Product data sheet
14 October 2016
4 / 11
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