HANBit
HMF51232M4G
FLASH-ROM MODULE 2MByte (512K x 32-Bit)
Part No. HMF51232M4G
GENERAL DESCRIPTION
The HMF51232M4G is a high-speed flash read only memory (FROM) module containing 524,288 words organized in a x32bit
configuration. The module consists of four 512Kx 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 12.0V flash or EPROM devices.
Four chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1) are used to enable the module’s 4 bytes independently.
Output enable (/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition, the module is becoming power standby mode, system designer can get low-power
design.
All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible.
FEATURES
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Access time : 55,70, 90 and 120ns
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High-density 2MByte design
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High-reliability, low-power design
w
Single + 5V
±
0.5V power supply
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Easy memory expansion
wAll
inputs and outputs are TTL- compatible
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FR4-PCB design
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Low profile 72-pin SIMM
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Minimum 1,000,000 write/erase cycle
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Sector erases architecture
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Sector group protection
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Temporary sector group unprotection
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Part Identification
HMF51232M4G: Gold Plate Lead
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
PIN ASSIGNMENT
SYMBOL
Vss
A3
A2
A1
A0
Vcc
A11
/OE
A10
Vcc
NC
/CE_LL1
DQ7
DQ0
DQ1
DQ2
DQ6
DQ5
DQ4
DQ3
/WE
A17
A14
A13
PIN
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
SYMBOL
Vcc
DQ8
DQ9
DQ10
NC
Vcc
/CE_LM1
DQ15
DQ14
DQ13
DQ12
DQ11
A18
A16
Vss
A6
Vcc
A5
A4
Vcc
NC
/CE_UM1
DQ23
DQ16
PIN
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
SYMBOL
DQ17
DQ18
DQ22
DQ21
DQ20
DQ19
Vcc
A15
A12
A7
Vcc
A8
A9
DQ24
DQ25
DQ26
NC
/CE_UU1
DQ31
DQ30
DQ29
DQ28
DQ27
Vss
OPTIONS
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Timing
55ns access
70ns access
90ns access
120ns access
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Package
72-pin SIMM
MARKING
- 55
- 70
- 90
- 120
16
17
18
19
20
21
22
23
M
24
72-PIN SIMM TOP VIEW
FUNCTIONAL BLOCK DIAGRAM
URL:
www.hbe.co.kr
REV.02(August,2002)
1
HANBit Electronics Co., Ltd.
HANBit
HMF51232M4G
DQ0 - DQ31
A0 - A18
32
19
A0-18
/WE
/OE
/CE
DQ 0-7
U5
/CE_LL1
A0-18
/WE
/OE
/CE
/CE_LM1
A0-18
/WE
/OE
/CE
/CE_UM1
A0-18
/WE
/OE
/WE
/OE
/CE
/CE_UU1
DQ24-31
DQ16-23
DQ 8-15
U6
U7
U8
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE
Note
: X means don't care
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
DQ
HIGH-Z
HIGH-Z
Dout
Din
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
ABSOLUTE MAXIMUM RATINGS
URL:
www.hbe.co.kr
REV.02(August,2002)
2
HANBit Electronics Co., Ltd.
HANBit
PARAMETER
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
Storage Temperature
SYMBOL
V
IN,OUT
V
CC
T
STG
HMF51232M4G
RATING
-2.0V to +7.0V
-2.0V to +7.0V
-65oC to +125oC
Operating Temperature
T
A
-55oC to +125oC
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Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Vcc for
±5%
device Supply Voltages
Vcc for
±
10% device Supply Voltages
Ground
SYMBOL
V
CC
Vcc
V
SS
MIN
4.75V
4.5V
0
0
TYP.
MAX
5.25V
5.5V
0
DC AND OPERATING CHARACTERISTICS
(0oC
≤
TA
≤
70 oC ; Vcc = 5V
±
0.5V )
PARAMETER
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Vcc Active Current for Read(1)
Vcc Active Current for Program
/CE = V
IL
, /OE=V
IH
or Erase(2)
Vcc Standby Current
Low Vcc Lock-Out Voltage
Notes:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at V
IH
.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
/CE= V
IH
I
CC3
V
LKO
4
3.2
20
4.2
mA
V
I
CC2
120
160
mA
TEST CONDITIONS
Vcc=Vcc max, V
IN
= GND to Vcc
Vcc=Vcc max, VOUT= GND to Vcc
I
OH
= -2.5mA, Vcc = Vcc min
I
OL
= 12mA, Vcc =Vcc min
/CE = V
IL
, /OE=V
IH
,
SYMBOL
I
L1
I
L0
V
OH
V
OL
I
CC1
80
2.4
0.45
120
MIN
MAX
±1.0
±1.0
UNITS
µA
µA
V
V
mA
ERASE AND PROGRAMMING PERFORMANCE
URL:
www.hbe.co.kr
REV.02(August,2002)
3
HANBit Electronics Co., Ltd.
HANBit
LIMITS
PARAMETER
MIN.
Sector Erase Time
-
TYP.
1
MAX.
UNIT
HMF51232M4G
COMMENTS
Excludes 00H programming
8
sec
prior to erasure
Excludes system-level
Byte Programming Time
-
7
300
us
overhead
Excludes system-level
Chip Programming Time
-
3.6
10.8
sec
overhead
CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
TEST SETUP
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
o
TYP.
6
8.5
7.5
MAX
7.5
12
9
UNIT
pF
pF
pF
V
IN
= 0
V
OUT
= 0
V
IN
= 0
Notes
: Test conditions T
A
= 25 C, f=1.0 MHz.
TEST CONDITIONS
TEST CONDITION
Output load
Output load Capacitance, C
L
Input Rise and Fall Times
Input Pulse Levels
Input timing measurement reference levels
Output timing measurement reference levels
30
5
0~3
1.5
1.5
-55
1 TTL gate
100
20
0.45~2.4
0.8
2.0
pF
ns
V
V
V
ALL OTHERS
UNIT
AC CHARACTERISTICS
u
Read Only Operations Characteristics
PARAMETE
TEST
R
SYMBOLS
t
RC
t
ACC
Address to Output Delay
/OE = V
IL
URL:
www.hbe.co.kr
REV.02(August,2002)
-55
DESCRIPTION
SETUP
Read Cycle Time
/CE = V
IL
MIN
MAX
-70
MIN
MAX
-90
MIN
MAX
-120
MIN
MAX
UNIT
55
55
70
70
90
90
120
120
ns
ns
4
HANBit Electronics Co., Ltd.
HANBit
t
CE
t
OE
t
DF
t
DF
Chip Enable to Output Delay
Chip Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From
Addresses,
t
QH
/CE or /OE, Whichever Occurs
First
0
0
0
18
0
/OE = V
IL
55
30
0
20
70
30
0
HMF51232M4G
90
35
0
20
35
120
50
ns
ns
ns
ns
0
ns
5.0V
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
u
Erase/Program Operations
PARAMETE
R
SYMBOLS
t
WC
t
AS
t
AH
t
DS
t
DH
t
OES
t
GHWL
t
CS
t
CH
t
WP
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recover Time Before Write
/CE Setup Time
/CE Hold Time
Write Pulse Width
30
35
40
25
45
30
0
0
0
0
0
45
50
55
70
0
45
45
50
50
90
120
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DESCRIPTION
MIN
-55
TYP
MIN
-70
MAX
MIN
-90
MAX
MIN
-120
MAX
UNIT
URL:
www.hbe.co.kr
REV.02(August,2002)
5
HANBit Electronics Co., Ltd.
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