HANBit
HMF51232M4V
FLASH-ROM MODULE 2MByte (512K x 32-Bit)
Part No. HMF51232M4V
GENERAL DESCRIPTION
The HMF51232M4V is a high-speed flash read only memory (FROM) module containing 524,288 words organized in a x32bit
configuration. The module consists of four 512Kx 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 12.0V flash or EPROM devices.
Four chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1) are used to enable the module’s 4 bytes independently.
Output enable (/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition, the module is becoming power standby mode, system designer can get low-power
design.
All module components may be powered from a single +3V DC power supply and all inputs and outputs are TTL-compatible.
FEATURES
w
Access time : 55,70, 90 and 120ns
w
High-density 2MByte design
w
High-reliability, low-power design
w
Single + 3V
±
0.3V power supply
w
Easy memory expansion
wAll
inputs and outputs are TTL- compatible
w
FR4-PCB design
w
Low profile 72-pin SIMM
w
Minimum 1,000,000 write/erase cycle
w
Sector erases architecture
w
Sector group protection
w
Temporary sector group unprotection
w
Part Identification
HMF51232M4V : Gold Plate Lead
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SYMBOL
Vss
A3
A2
A1
A0
Vcc
A11
/OE
A10
Vcc
NC
/CE_LL1
DQ7
DQ0
DQ1
DQ2
DQ6
DQ5
DQ4
DQ3
/WE
A17
A14
A13
PIN ASSIGNMENT
PIN
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
SYMBOL
Vcc
DQ8
DQ9
DQ10
NC
Vcc
/CE_LM1
DQ15
DQ14
DQ13
DQ12
DQ11
A18
A16
Vss
A6
Vcc
A5
A4
Vcc
NC
/CE_UM1
DQ23
DQ16
72-PIN SIMM
TOP VIEW
PIN
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
SYMBOL
DQ17
DQ18
DQ22
DQ21
DQ20
DQ19
Vcc
A15
A12
A7
Vcc
A8
A9
DQ24
DQ25
DQ26
NC
/CE_UU1
DQ31
DQ30
DQ29
DQ28
DQ27
Vss
OPTIONS
w
Timing
55ns access
70ns access
90ns access
120ns access
w
Package
MARKING
- 55
- 70
- 90
- 120
16
17
18
19
20
21
22
23
24
72-pin SIMM
M
FUNCTIONAL BLOCK DIAGRAM
URL:
www.hbe.co.kr
REV.02(August,2002)
1
HANBit Electronics Co., Ltd.
HANBit
HMF51232M4V
DQ0 - DQ31
A0 - A18
32
19
A0-18
/WE
/OE
/CE
DQ 0-7
U5
/CE_LL1
A0-18
/WE
/OE
/CE
/CE_LM1
A0-18
/WE
/OE
/CE
/CE_UM1
A0-18
/WE
/OE
/WE
/OE
/CE
/CE_UU1
DQ24-31
DQ16-23
DQ 8-15
U6
U7
U8
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE
Note
: X means don't care
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
DQ
HIGH-Z
HIGH-Z
Dout
Din
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
ABSOLUTE MAXIMUM RATINGS
URL:
www.hbe.co.kr
REV.02(August,2002)
2
HANBit Electronics Co., Ltd.
HANBit
PARAMETER
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
Power Dissipation
Storage Temperature
SYMBOL
V
IN,OUT
V
CC
Po
T
STG
HMF51232M4V
RATING
-0.5V to V
CC
+ 7.0V
-0.5V to + 4.0V
4W
-65oC to +150oC
Operating Temperature
T
A
-55oC to +125oC
w
Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Vcc for
±5%
device Supply Voltages
Vcc for
±
10% device Supply Voltages
Ground
SYMBOL
V
CC
Vcc
V
SS
MIN
4.75V
4.5V
0
0
TYP.
MAX
5.25V
5.5V
0
DC AND OPERATING CHARACTERISTICS
(0oC
≤
TA
≤
70 oC ; Vcc = 5V
±
0.5V )
PARAMETER
Input Load Current
A9 Input Load Current
Output Leakage Current
Vcc Active Read Current
TEST CONDITIONS
Vcc=Vcc max, V
IN
= Vss to Vcc
Vcc=Vcc max; A9 = 12.5V
Vcc=Vcc max, VOUT= Vss to Vcc
/CE=V
IL
, /OE=V
IH
,
5 MHz
1 MHz
Vcc Active Write Current
Vcc Standby Current
Vcc Reset Current
Automatic Sleep Mode
V
IH
= Vcc±0.3V;
I
CC5
V
IL
= Vss±0.3V
Input Low Voltage
Input High Voltage
Voltage for Autoselect and
Vcc= 3.3V
Temporary Sector Unprotect
Output Low Voltage
Output High Voltage
I
OH=
-100µA, Vcc=Vcc min
Low Vcc Lock-Out Voltage
Notes:
1.
The Icc current listed is typically less than 2mA/MHz, with /OE at V
IH
.
V
OH2
V
LKO
Vcc-0.4
2.3
2.5
V
I
OL
= 4.0 mA, Vcc =Vcc min
I
OH=
-0.2 mA, Vcc=Vcc min
V
OL
V
OH1
0.85Vcc
0.45
V
V
V
ID
11.5
12.5
V
V
IL
V
IH
-0.5
0.7×Vcc
0.8
Vcc+0.3
V
V
0.2
5
/CE = V
IL
, /OE=V
IH
/CE= V
CC
±0.3V
I
CC2
I
CC3
I
CC4
SYMBOL
I
LI
I
LIT
I
L0
I
CC1
28
8
60
0.8
0.8
MIN
TYP
MAX
±1.0
35
±1.0
48
mA
16
120
20
20
mA
µA
µA
µA
UNITS
µA
µA
µA
URL:
www.hbe.co.kr
REV.02(August,2002)
3
HANBit Electronics Co., Ltd.
HANBit
2.
3.
4.
5.
Maximum Icc currnet specifications are tested with V
cc=
V
cc
max.
Icc active while Embedded Erase of Embedded Program is in progress.
Not 100%tested.
HMF51232M4V
Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+30
ns.
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time
Notes:
1. Typical program and erase times assume the following conditions:25° C, 3.0V Vcc, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, Vcc=2.7V(3.0V for-55R), 1,000,000cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
bytes program faster than the maximum program times listed.
4. In the pre-programming step of th Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command.
See Table 4 for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
-
-
MIN
-
TPYP
0.7
11
9
4.5
300
13.5
MAX
15
UNIT
sec
sec
us
sec
COMMENTS
Excludes 00h programming
prior to erasure
Excludes system-level
overhead
CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
TEST SETUP
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
V
IN
= 0
V
OUT
= 0
V
IN
= 0
6
8.5
7.5
7.5
12
9
pF
pF
pF
TYP.
MAX
UNIT
Notes
: Test conditions T
A
= 25
o
C, f=1.0 MHz.
TEST CONDITIONS
TEST CONDITION
Output load
Output load Capacitance, C
L
Input Rise and Fall Times
Input Pulse Levels
Input timing measurement reference levels
URL:
www.hbe.co.kr
REV.02(August,2002)
-55R, -70
1 TTL gate
30
5
0~3
1.5
-90, -120
UNIT
100
pF
ns
V
V
HANBit Electronics Co., Ltd.
4
HANBit
Output timing measurement reference levels
1.5
HMF51232M4V
V
AC CHARACTERISTICS
u
Read Only Operations Characteristics
PARAMETE
TEST
R
SYMBOLS
t
RC
t
ACC
Address to Output Delay
/OE = V
IL
t
CE
t
OE
t
DF
t
DF
Chip Enable to Output Delay
Chip Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From
Addresses,
t
Q
/CE or /OE, Whichever Occurs
First
0
0
0
0
ns
/OE = V
IL
55
30
25
25
70
30
25
25
90
35
30
30
120
50
30
30
ns
ns
ns
ns
Read Cycle Time
/CE = V
IL
55
55
70
70
90
120
ns
90
120
ns
DESCRIPTION
SETUP
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
-55
-70
-90
-120
UNIT
5.0V
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
u
Erase/Program Operations
PARAMETE
DESCRIPTION
-55
-70
-90
-120
UNIT
URL:
www.hbe.co.kr
REV.02(August,2002)
5
HANBit Electronics Co., Ltd.
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