HANBit
HAN
BI T
SRAM MODULE 768KBit (32K x 24-Bit)
Part No.
HMS3224M3/Z3
HMS3224M3, HMS3224Z3
GENERAL DESCRIPTION
The HMS3224M3/Z3 is a high-speed static random access memory (SRAM) module containing 32,768 words
organized in a x24-bit configuration. The module consists of three 32K x 8 SRAMs mounted on a 56-pin, single-
sided, FR4-printed circuit board.
Writing to the device is accomplished when the chip enable (/CE) and write enable(/WE) inputs are both LOW.
Data on the input/output pins (DQ0 through DQ23) of the device is written into the memory location specified
on the address pins (A0 through A14).
Reading the device is accomplished by taking the chip enable (/CE) and output enable(/OE) LOW while write
enable(/WE) remains HIGH. Under these conditions, the contents of the memory location specified on the address
pins will appear on the input/output pins.
The input/output pins remains in a high-impedance state unless the module is selected, outputs are enabled, and
write enable is HIGH.
PIN ASSIGNMENT
FEATURES
Access times : 12, 15 and 20ns
High-density 768Kbit design
High-reliability, high-speed design
Single + 5V
±0.5V
power supply
56-pin, low-active power design
All inputs and outputs are TTL-compatible
Industry-standard pinout
FR4-PCB design
Part identification
HMS3224M3 : 56Pin SIMM Design
HMS3224Z3 : 56Pin ZIP Design
→Pin-compatible
with the HMS3224M3
Vcc
DQ1
DQ3
DQ5
DQ7
Vss
A1
A3
A5
A7
NC
Vss
DQ9
DQ11
DQ13
DQ15
NC
/OE
A9
A11
A13
NC
Vss
DQ17
DQ19
DQ21
DQ23
Vcc
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
Vcc
DQ0
DQ2
DQ4
DQ6
Vss
A0
A2
A4
A6
/CE
NC
DQ8
DQ10
DQ12
DQ14
Vss
/WE
A8
A10
A12
A14
Vss
DQ16
DQ18
DQ20
DQ22
Vcc
OPTIONS
Timing
12ns access
15ns access
20ns access
MARKING
-12
-15
-20
M
Z
Packages
56-pin SIMM
56-pin ZIP
ZIP
TOP VIEW
1
HANBit Electronics Co.,Ltd.
HANBit
FUNCTIONAL BLOCK DIAGRAM
HMS3224M3/Z3
DQ0 - DQ23
A0 - A14
24
15
A0-14
DQ 0-7
/WE
/OE
U1
/CE
/CE1
A0-14
DQ 8-15
/WE
/OE
U2
/CE
/CE2
A0-14
/WE
/OE
DQ16-23
/WE
/OE
U3
/CE
/CE3
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
OUTPUT
HIGH-Z
HIGH-Z
Dout
Din
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
2
HANBit Electronics Co.,Ltd.
HANBit
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
SYMBOL
V
IN,OUT
V
CC
P
D
T
STG
HMS3224M3/Z3
RATING
-0.5V to +7.0V
-0.5V to +7.0V
3W
-65oC to +150oC
Operating Temperature
T
A
0oC to +70oC
Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in
the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
*
SYMBOL
V
CC
V
SS
V
IH
V
IL
MIN
4.5V
0
2.2
-0.5*
( TA=0 to 70 o C )
TYP.
5.0V
0
-
-
MAX
5.5V
0
Vcc+0.5V**
0.8V
V
IL
(Min.) = -2.0V (Pulse Width
≤
10ns) for I
≤
20 mA
**
V
IH
(Min.) = Vcc+2.0V (Pulse Width
≤
10ns) for I
≤
20 mA
DC AND OPERATING CHARACTERISTICS (1)
(0oC
≤
TA
≤
70 oC ; Vcc = 5V
±
0.5V )
PARAMETER
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
* Vcc=5.0V, Temp=25 oC
TEST CONDITIONS
V
IN
= Vss to Vcc
CE=V
IH or
OE =V
IH
or WE=V
IL
V
OUT
=Vss to V
CC
I
OH
= -4.0mA
I
OL
= 8.0mA
SYMBO
L
IL
I
IL
0
V
OH
V
OL
MIN
-6
-6
2.4
0.4
MAX
6
6
UNITS
µA
µA
V
V
3
HANBit Electronics Co.,Ltd.
HANBit
HMS3224M3/Z3
DC AND OPERATING CHARACTERISTICS (2)
MAX
DESCRIPTION
Power Supply
Current: Operating
Power Supply
Current :Standby
TEST CONDITIONS
Min. Cycle, 100% Duty
/CE=V
IL
, V
IN
=V
IH
or V
IL
,
I
OUT
=0mA
Min. Cycle, /CE=V
IH
f=0MHZ, /CE
≥
V
CC
-0.2V,
V
IN
≥
V
CC
-0.2V or V
IN
≤
0.2V
SYMBOL
l
CC
l
SB
l
SB1
-12
495
120
6
-15
450
120
6
-20
420
120
6
UNIT
mA
mA
mA
CAPACITANCE
DESCRIPTION
Input /Output Capacitance
Input Capacitance
TEST CONDITIONS
V
I/O
=0V
V
IN
=0V
SYMBOL
C
I/O
C
IN
MAX
24
21
UNIT
pF
pF
* NOTE : Capacitance is sampled and not 100% tested
AC CHARACTERISTICS
(0oC
≤
TA
≤
70 oC ; Vcc = 5V
±
0.5V, unless otherwise specified)
TEST CONDITIONS
PARAMETER
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
VALUE
0 to 3V
3ns
1.5V
See below
Output
+5V
Load
Output Load (B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
+5V
480
Ω
D
OUT
255
Ω
30pF*
D
OUT
255
Ω
480
Ω
5pF*
4
HANBit Electronics Co.,Ltd.
HANBit
HMS3224M3/Z3
READ CYCLE
-12
PARAMETER
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Output
Output Enable to Low-Z Output
Chip Enable to Low-Z Output
Output Disable to High-Z Output
Chip Disable to High-Z Output
Output Hold from Address Change
Chip Select to Power Up Time
Chip Select to Power Down Time
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
-15
-20
UNIT
t
RC
t
AA
t
CO
t
OE
t
OLZ
t
LZ
t
OHZ
t
HZ
t
OH
t
PU
t
PD
12
12
12
6
0
3
0
0
3
0
12
6
6
15
15
15
7
0
3
0
0
3
0
15
7
7
20
20
20
9
0
3
0
0
3
0
20
10
10
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WRITE CYCLE
-12
PARAMETER
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End of Write to Output Low-Z
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
-15
-20
UNIT
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
12
9
0
9
9
12
0
7
0
0
6
15
11
0
12
12
0
0
8
0
0
8
20
13
0
13
13
0
0
10
0
0
8
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
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