DC COMPONENTS CO., LTD.
R
MJE13003D
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high-voltage, high-speed power switching
inductive circuits where fall time is critical.
TO-126ML
Pinning
1 = Base
2 = Collector
3 = Emitter
.148(3.75)
.138(3.50)
.163(4.12)
.153(3.87)
.044(1.12)
.034(0.87)
.060(1.52)
.050(1.27)
.146(3.70)
.136(3.44)
Absolute Maximum Ratings
(T
A
=25
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation(T
C
=25 C)
Junction Temperature
Storage Temperature
o
o
C)
Rating
700
400
9
1.5
0.75
40
+150
-55 to +150
Unit
V
V
V
A
A
W
o
o
.123(3.12)
.113(2.87)
Symbol
V
CEV
V
CEO
V
EBO
I
C
I
B
P
D
T
J
T
STG
.300(7.62)
.290(7.37)
1 2 3
.084(2.12)
.074(1.87)
.056(1.42)
.046(1.17)
.033(0.84)
.027(0.68)
.180
Typ
(4.56)
.090
Typ
(2.28)
Dimensions in inches and (millimeters)
.084(2.14)
.074(1.88)
.591(15.0)
.551(14.0)
.027(0.69)
.017(0.43)
C
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CEV
BV
CEO
I
CEV
I
EBO
V
CE(sat)1
(1)
Min
700
400
-
-
-
-
-
-
-
8
5
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
1
1
0.5
1
3
1
1.2
40
25
Unit
V
V
mA
mA
V
V
V
V
V
-
-
Test Conditions
I
C
=1mA, V
BE(off)
=1.5V
I
C
=10mA
V
CE
=700V, V
BE(off)
=1.5V
V
EB
=9V
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1.5A, I
B
=0.5A
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=0.5A, V
CE
=2V
I
C
=1A, V
CE
=2V
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
V
CE(sat)2
V
CE(sat)3
V
BE(sat)1
V
BE(sat)2
h
FE1
h
FE2
Base-Emitter Saturation Voltage
(1)
DC Current Gain
(1)
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
2%
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