BC337/338
BC337/338
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC327/BC328
TO-92
1
1. Collector 2. Base 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CES
Parameter
Collector-Emitter Voltage
: BC337
: BC338
Collector-Emitter Voltage
: BC337
: BC338
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
30
45
25
5
800
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: BC337
: BC338
Collector-Emitter Breakdown Voltage
: BC337
: BC338
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: BC337
: BC338
DC Current Gain
Collector-Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=10mA, I
B
=0
Min.
45
25
I
C
=0.1mA, V
BE
=0
50
30
I
E
=0.1mA, I
C
=0
V
CE
=45V, I
B
=0
V
CE
=25V, I
B
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=300mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=300mA
V
CE
=5V, I
C
=10mA, f=50MHz
V
CB
=10V, I
E
=0, f=1MHz
100
12
100
60
5
2
2
100
100
630
0.7
1.2
V
V
MHz
pF
V
V
V
nA
nA
Typ.
Max.
Units
V
V
BV
CES
BV
EBO
I
CES
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
h
FE
Classification
Classification
h
FE1
h
FE2
16
100 ~ 250
60-
25
160 ~ 400
100-
40
250 ~ 630
170-
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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Definition of Terms
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Advance Information
Product Status
Formative or In
Design
First Production
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This datasheet contains the design specifications for
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©2002 Fairchild Semiconductor Corporation
Rev. I1
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