MITSUBISHI THYRISTOR MODULES
TM100SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
TM100SZ-M
Average on-state current ..........
100A
Repetitive peak reverse voltage
................
400V
•
V
DRM
Repetitive peak off-state voltage
................
400V
•
TRIPLE ARMS
•
Non-Insulated Type
•
I
T (AV)
•
V
RRM
APPLICATION
Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
93.5
80±
0.2
K
3
K
2
K
1
2–φ6.5
K
2
G
2
12.5
K
3
K
2
K
2
G
2
CR
3
CR
2
K
1
K
1
G
1
CR
1
26
G
3
K
1
G
1
K
3
K
3
G
3
3–M5
17.5
20
20
Tab#110, t=0.5
K
3
K
2
K
1
A
9
A
21
LABEL
6.5
30
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM100SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
M
400
480
320
400
480
320
Unit
V
V
V
V
V
V
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I
2t
for fusing
Conditions
Ratings
155
Unit
A
A
A
A
2
s
A/µs
W
W
V
V
A
°C
°C
N·m
kg·cm
N·m
kg·cm
g
Three-phase, half-wave, T
C
=122°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=150°C
100
2000
1.7
×
10
4
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
50
5.0
0.5
10
5.0
2.0
–40~+150
–40~+125
Main terminal screw M5
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
1.47~1.96
15~20
1.96~2.94
20~30
160
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
T
j
=150°C, V
RRM
applied
T
j
=150°C, V
DRM
applied
T
j
=150°C, I
TM
=300A, instantaneous meas.
T
j
=150°C, V
D
=2/3V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
T
j
=150°C, V
D
=1/2V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
Junction to case (per 1/3 module)
Case to fin, conductive grease applied (per 1/3 module)
Test conditions
Min.
—
—
—
200
—
0.25
15
—
—
Typ.
—
—
—
—
—
—
—
—
—
Max.
30
30
1.15
—
3.0
—
100
0.2
0.3
Unit
mA
mA
V
V/µs
V
V
mA
°C/
W
°C/
W
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM100SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
10
4
7 T
j
=150°C
5
3
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
0.6
2000
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
SURGE (NON-REPETITIVE)
ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
1600
1200
800
400
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
1
2 3
5 7 10
20 30
50 70100
ON-STATE VOLTAGE
(V)
CONDUCTION TIME
(CYCLE AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10
0
2 3 5 710
1
0.200
TRANSIENT THERMAL IMPEDANCE
(°C/W)
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0
10
–3
2 3 5 710
–2
2 3 5 7 10
–1
2 3 5 7 10
0
GATE CHARACTERISTICS
4
3
2
V
FGM
=10V
10
1
P
GM
=5W
7
5 V
GT
=3.0V
P
FG(AV)
=
3
0.50W
2
I
GT
=
10
0
100mA
7
5 T
j
=25°C
3
2
V
GD
=0.25V
–1
10
7
5
410
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE VOLTAGE (V)
GATE CURRENT (mA)
I
FGM
=2.0A
TIME (s)
100
MAXIMUM AVERAGE ON-STAGE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
120°
180°
90°
(°C)
60°
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
150
PER SINGLE ELEMENT
140
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ=30°
AVERAGE ON-STATE POWER
DISSIPATION (W)
80
60
CASE TEMPERATURE
θ=30°
θ
360°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE
ELEMENT
60
80
100
130
40
120
60°
90° 120° 180°
20
110
0
0
20
40
100
0
20
40
60
80
100
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
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