MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
TM200RZ/EZ/GZ-M,-H,24,-2H
•
I
T (AV)
•
I
F (AV)
•
V
RRM
•
•
•
•
Average on-state current ..........
200A
Average forward current ..........
200A
Repetitive peak reverse voltage
..........
400/800/1200/1600V
V
DRM
Repetitive peak off-state voltage
..........
400/800/1200/1600V
MIX DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
(RZ Type)
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
3–φ6.5
3–M8
A
1
20
(RZ)
K
1
K
2
A
2
A
1
40
K
2
SR
K1
G1
CR
K
1
A
2
K
1
G
1
6
18
30
68.5
16
32
150
18
30
68.5
16
(EZ)
CR
Tab#110, t=0.5
A
1
K
1
K
2
SR
A
2
K
1
G
1
LABEL
7
23 9
32
39
(GZ)
CR
A
1
K
1
K
2
SR
A
2
K
1
G
1
(RZ Type)
(Bold line is connective bar.)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
M
400
480
320
400
480
320
H
800
960
640
800
960
640
24
1200
1350
960
1200
1350
960
H
1600
1700
1280
1600
1700
1280
Unit
V
V
V
V
V
V
Symbol
I
T (RMS)
, I
F (RMS)
I
T (AV)
, I
F (AV)
I
TSM
, I
FSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
Parameter
RMS current
Average current
Surge (non-repetitive) current
I
2t
for fusing
Conditions
Ratings
310
Unit
A
A
A
A
2
s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Single-phase, half-wave 180° conduction, T
C
=67°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=125°C
200
4000
6.7
×
10
4
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
100
10
3.0
10
5.0
4.0
–40~125
–40~125
Charged part to case
Main terminal screw M8
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
I
DRM
V
TM
, V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
T
j
=125°C, V
RRM
applied
T
j
=125°C, V
DRM
applied
T
j
=125°C, I
TM
=I
FM
=600A, instantaneous meas.
Test conditions
Min.
—
—
—
500
—
0.25
15
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
30
30
1.35
—
3.0
—
100
0.2
0.1
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/
W
°C/
W
MΩ
Critical rate of rise of off-state voltage T
j
=125°C, V
D
=2/3V
DRM
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
T
j
=25°C, V
D
=6V, R
L
=2Ω
T
j
=125°C, V
D
=1/2V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
—
—
—
—
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
I
T (RMS)
I
F (RMS)
I
T (AV)
I
F (AV)
I
TSM
I
FSM
I
2t
di/dt
Item
Thyristor
Diode
P
GM
PG
(AV)
V
FGM
I
FGM
T
j
T
stg
—
—
—
—
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
—
—
—
—
—
I
RRM
I
DRM
V
TM
V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
10
4
7 T
j
=125°C
5
3
2
CURRENT (A)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
0.5
4000
SURGE (NON-REPETITIVE)
CURRENT (A)
3500
3000
2500
2000
1500
1000
500
1.0
1.5
2.0
2.5
0
1
2 3
5 7 10
20 30
50 70100
RATED SURGE (NON-REPETITIVE)
CURRENT
FORWARD VOLTAGE (V)
CONDUCTION TIME (CYCLE AT 60Hz)
GATE CHARACTERISTICS
4
3
2
GATE VOLTAGE (V)
10
1
7
5
3
2
V
FGM
=10V
V
GT
=3.0V
P
G(AV)
=
3.0W
P
GM
=10W
TRANSIENT THERMAL IMPEDANCE
(°C/W)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10
0
2 3 4 5 7 10
1
2 3
0.25
0.20
0.15
T
j
=25°C
10
0
7
5 I
GT
=
100mA
3
2
0.10
10
–1
V
GD
=0.25V
I
FGM
=4.0A
7
5
410
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
0.05
0
10
–3
2 3 5 710
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM AVERAGE POWER
DISSIPATION (SINGLE PHASE HALFWAVE)
320
AVERAGE POWER DISSIPATION (W)
280
240
200
160
120
80
40
0
0
40
80
120
160
200
CASE TEMPERATURE (°C)
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
130
120
180°
120°
90°
60°
110
100
90
80
70
60
50
0
θ=30°
40
80
60°
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
θ=30°
90° 120° 180°
120
160
200
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
400
AVERAGE POWER DISSIPATION (W)
350
300
250
200
150
100
50
0
0
40
MAXIMUM AVERAGE
POWER DISSIPATION
(RECTANGULAR WAVE)
θ
360°
RESISTIVE, INDUCTIVE
120°
LOAD
PER SINGLE
90°
ELEMENT
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
130
120
CASE TEMPERATURE (°C)
110
100
90
80
70
60
50
40
θ=30°
60°
0
40
120°
90° 180°
270° DC
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
DC
270°
180°
60°
θ=30°
80 120 160 200 240 280 320
AVERAGE CURRENT (A)
30
80 120 160 200 240 280 320
AVERAGE CURRENT (A)
Feb.1999