TN2540
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
400V
*
Same as SOT-89.
†
R
DS(ON)
(max)
12Ω
V
GS(th)
(max)
2.0V
I
D(ON)
(min)
1.0A
Order Number / Package
TO-92
TN2540N3
TO-243AA*
TN2540N8
Die
†
TN2540ND
Product supplied on 2000 piece carrier tape reels.
MIL visual screening available.
Product marking for TO-243AA
Features
❏
Low threshold — 2.0V max.
❏
High input impedance
❏
Low input capacitance — 125pF max.
❏
Fast switching speeds
❏
Low on resistance
❏
Free from secondary breakdown
❏
Low input and output leakage
❏
Complementary N- and P-channel devices
TN5D❋
Where
❋
= 2-week alpha date code
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
❏
Logic level interfaces – ideal for TTL and CMOS
❏
Solid state relays
❏
Battery operated systems
❏
Photo voltaic drives
❏
Analog switches
❏
General purpose line drivers
❏
Telecom switches
Package Options
D
G
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
11/12/01
D
S
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
SGD
TO-243AA
(SOT-89)
TO-92
Note: See Package Outline section for dimensions.
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
TN2540
Thermal Characteristics
Package
TO-92
TO-243AA
†
I
D
(continuous)*
175mA
260mA
I
D
(pulsed)
2.0A
1.8A
Power Dissipation
@ T
A
= 25
°
C
1.0W
1.6W
†
θ
jc
°
C/W
125
15
θ
ja
°
C/W
170
78
†
I
DR
*
175mA
260mA
I
DRM
2.0A
1.8A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
400
0.6
-2.5
2.0
-4.0
100
10
1.0
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
0.3
0.75
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
300
125
200
95
20
10
125
70
25
20
15
25
20
1.8
V
ns
V
GS
= 0V, I
SD
= 200mA
V
GS
= 0V, I
SD
= 1A
ns
V
DD
= 25V,
I
D
= 1A,
R
GEN
= 25Ω
pF
0.5
1.0
8.0
8.0
12
12
0.75
Ω
%/°C
m
Typ
Max
Unit
V
V
mV/°C
nA
µA
mA
A
Conditions
V
GS
= 0V, I
D
= 100µA
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 150mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 25V, I
D
= 100mA
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
Ω
V
DD
R
L
OUTPUT
D.U.T.
TN2540
Typical Performance Curves
2.0
1.6
Output Characteristics
1.0
0.8
Saturation Characteristics
VGS =10V
8V
6V
5V
VGS =10V
8V
6V
5V
I
D
(amperes)
0.8
0.4
0
I
D
(amperes)
1.2
0.6
0.4
0.2
0
4V
3V
0
2
4
6
V
DS
(volts)
8
10
4V
0
10
20
30
V
DS
(volts)
3V
40
50
1.0
0.8
Transconductance vs. Drain Current
V
DS
= 25V
2.0
Power Dissipation vs. Ambient Temperature
TO-243AA
G
FS
(siemens)
P
D
(watts)
0.6
0.4
0.2
0
T
A
= -55
°
C
25
°
C
125
°
C
1.0
TO-92
0
0.2
0.4
I
D
(amperes)
0.6
0.8
1.0
1.2
1.4
0
0
25
50
75
100
T
A
(
°
C)
125
150
10
Maximum Rated Safe Operating Area
1.0
TO-243AA(pulsed)
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
0.6
0.4
0.2
0
0.001
I
D
(amperes)
1.0
TO-243AA(DC)
0.1
TO-243AA
T
A
= 25
°
C
P
D
= 1.6W
TO-92 (DC)
0.01
1
10
V
DS
(volts)
100
1000
0.01
t
p
(seconds)
0.1
1
10
3
TN2540
Typical Performance Curves
BV
DSS
Variation with Temperature
1.1
50
On-Resistance vs. Drain Current
40
V
GS
= 4.5V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
V
GS
= 10V
30
1.0
20
10
0.9
-50
0
50
100
150
0
0
0.4
0.8
1.2
1.6
2.0
T
j
(
°
C)
Transfer Characteristics
1.5
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
2.5
V
DS
= 25V
1.2
1.4
R
DS(ON)
@ 10V, 0.5A
2.0
1.2
I
D
(amperes)
T
A
= -55
°
C
0.9
1.5
1.0
1.0
0.8
0.5
0.6
0
0.6
25
°C
0.3
125°C
0
2
4
6
8
10
-50
0
50
100
150
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
200
10
T
j
(
°
C)
Gate Drive Dynamic Characteristics
f = 1MHz
8
150
V
DS
= 10V
C (picofarads)
V
GS
(volts)
6
100
C
ISS
4
V
DS
= 40V
260 pF
50
2
C
RSS
0
0
10
20
30
C
OSS
0
40
0
95pF
0.4
0.8
1.2
1.6
2.0
V
DS
(volts)
Q
G
(nanocoulombs)
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
V
(th)
@ 1mA
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