®
TN25 and TYNx25 Series
25A SCRs
STANDARD
MAIN FEATURES:
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
25
600 to 1000
40
Unit
G
A
A
K
V
A
A
mA
K A
G
K
A
DESCRIPTION
The TYN / TN25 SCR Series is suitable for
general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
D
2
PAK
(TN25-G)
G
TO-220AB
(TYN)
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
T
(AV)
I
TSM
Parameter
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state
current
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
tp = 8.3 ms
Tj = 25°C
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
300
450
50
4
1
- 40 to + 150
- 40 to + 125
5
A
2
S
A/µs
A
W
°C
V
Tc = 100°C
Tc = 100°C
Value
25
16
314
A
Unit
A
A
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
Tj
V
RGM
April 2002 - Ed: 4A
1/7
TN25 and TYNx25 Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
Symbol
I
GT
V
D
= 12 V
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
I
TM
= 50 A
Gate open
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
R
L
= 3.3 kΩ
Gate open
Tj = 125°C
R
L
= 33
Ω
Test Conditions
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
Value
4
40
1.3
0.2
50
90
1000
1.6
0.77
14
5
4
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
tp = 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
THERMAL RESISTANCES
Symbol
R
th(j-c)
R
th(j-a)
Junction to case (DC)
Junction to ambient (DC)
S = 1 cm
²
S = Copper surface under tab
Parameter
Value
1.0
TO-220AB
D
²
PAK
60
45
Unit
°C/W
°C/W
PRODUCT SELECTOR
Part Number
600 V
TN2540-xxxG
TYNx25
X
X
Voltage (xxx)
800 V
X
X
1000 V
X
X
40 mA
40 mA
D
²
PAK
TO-220AB
Sensitivity
Package
2/7
TN25 and TYNx25 Series
ORDERING INFORMATION
TN 25 40 - 600 G (-TR)
STANDARD
SCR
SERIES
CURRENT: 25A
SENSITIVITY:
40: 40mA
VOLTAGE:
600: 600V
800: 800V
1000: 1000V
PACKAGE:
2
G: D PAK
PACKING MODE:
Blank: Tube
-TR: Tape & Reel
TYN
STANDARD
SCR
SERIES
6
VOLTAGE:
6: 600V
8: 800V
10: 1000V
25
(RG)
PACKING MODE
Blank: Bulk
RG: Tube
CURRENT: 25A
OTHER INFORMATION
Part Number
TN2540-x00G
TN2540-x00G-TR
TYNx25
TYNx25RG
Note:
x = voltage
Marking
TN2540x00G
TN2540x00G
TYNx25
TYNx25
Weight
1.5 g
1.5 g
2.3 g
2.3 g
Base Quantity
50
1000
250
50
Packing mode
Tube
Tape & reel
Bulk
Tube
3/7
TN25 and TYNx25 Series
Fig. 1:
Maximum average power dissipation
versus average on-state current.
P(W)
24
22
20
18
16
14
12
10
8
6
4
2
0
α
= 180°
Fig. 2-1:
Average and D.C. on-state current
versus case temperature.
IT(av)(A)
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
D.C.
α
= 180°
360°
IT(av)(A)
0
2
4
6
8
10
12
α
Tcase(°C)
0
25
50
75
100
125
14
16
Fig. 2-2:
Average and D.C. on-state current
versus ambient temperature (copper surface
under tab: S = 1 cm² (for D²PAK).
IT(av)(A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
Tamb(°C)
75
100
125
α
= 180°
D.C.
Fig. 3:
Relative variation of thermal impedance
versus pulse duration.
K = [Zth/Rth]
1.00
Zth(j-c)
0.10
Zth(j-a)
tp(s)
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]
2.5
2.0
IGT
Fig. 5:
Surge peak on-state current versus
number of cycles.
ITSM(A)
350
300
tp = 10ms
250
200
1.5
1.0
0.5
Tj(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
IH & IL
Non repetitiv e
Tj initial = 25 °C
One cycle
150
100
50
0
1
Repetitive
Tcase = 100 °C
Number of cycles
10
100
1000
4/7
TN25 and TYNx25 Series
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t.
ITSM(A),I
2
t(A
2
s)
2000
1000
Tj initial = 25 °C
Fig. 7:
values).
On-state
characteristics
(maximum
ITM(A)
300
100
ITSM
Tj = Tj max.
I
2
t
Tj max.:
Vto = 0.77V
Rd = 14m
Ω
dI/dt
limitattion
10
Tj = 25°C
tp(ms)
100
0.01
0.10
1.00
10.00
1
0.0
0.5
1.0
1.5
VTM(V)
2.0
2.5
3.0
3.5
4.0
4.5
Fig. 8:
Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35
µm)
(D
2
PAK).
Rth(j-a)( °C/W)
80
70
60
50
40
30
20
10
0
0
4
8
12
16
S(cm
2
)
20
24
28
32
36
40
5/7
嵌入式系统
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