®
TN1215-G
SCR
FEATURES
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
DESCRIPTION
The TN1215 series of Silicon Controlled Rectifiers
uses a high performance glass passivated tech-
nology.
This SCR is designed for power supplies up to
400Hz on resistive or inductive load.
A
A
K
G
D
2
PAK
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
I
T(AV)
I
TSM
Parameter
RMS on-state current
(180
°
conductionangle)
Average on-state current
(180° conductionangle)
Non repetitive surge peak on-state current
(Tj initial = 25°C)
I
2
t
dI/dt
T
stg
T
j
Tl
I
2
t Value for fusing
Critical rate of rise of on-state current
dI
G
/dt = 1 A/µs.
I
G
= 100 mA
Storage junction temperature range
Operating junction temperature range
Maximum temperature for soldering during 10s
Tc= 110°C
Tc= 110°C
tp = 8.3 ms
tp = 10 ms
tp = 10ms
Value
12
8
146
140
98
100
- 40 to + 150
- 40 to + 125
260
A
2
s
A/
µ
s
°
C
°
C
Unit
A
A
A
Symbol
V
DRM
V
RRM
Parameter
Repetitive peak off-state voltage
Tj = 125°C
TN1215-
600G
600
800G
800
Unit
V
January 1998 - Ed: 4
1/5
TN1215-G
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Parameter
Junction to ambient (S=1cm
2
)
Junction to case for D.C
Value
45
1.3
Unit
°
C/W
°C/W
GATE CHARACTERISTICS
P
G (AV)
= 1W P
GM
= 10 W (tp = 20
µ
s)
ELECTRICAL CHARACTERISTICS
Symbol
I
GT
Test Conditions
V
D
= 12V (DC) R
L
= 33Ω
Tj= 25°C
Type
MIN
MAX
V
GT
V
GD
I
H
I
L
V
TM
I
DRM
I
RRM
dV/dt
V
D
= 12V (DC) R
L
= 33
Ω
V
D
= V
DRM
R
L
= 3.3kΩ
I
T
= 100mA
I
G
= 1.2 I
GT
I
TM
= 24A tp= 380
µ
s
V
D
= V
DRM
V
R
= V
RRM
V
D
=67%V
DRM
Gate open
Gate open
Tj= 25°C
Tj= 125°C
Tj= 25°C
Tj= 25°C
Tj= 25
°
C
Tj= 25°C
Tj= 125°C
Tj= 125
°
C
MAX
MIN
MAX
MAX
MAX
MAX
MAX
MIN
Value
2
15
1.3
0.2
30
60
1.5
5
3
200
V
V
mA
mA
V
µA
mA
V/
µ
s
Unit
mA
I
GM
= 4 A (tp = 20
µ
s)
V
RGM
= 5 V
ORDERING INFORMATION
Add ”-TR” suffix for Tape & Reel shipment
TN
SCR
CURRENT
2/5
12
15 - 600
G
PACKAGES :
G: D
2
PAK
SENSITIVITY
VOLTAGE
®
TN1215-G
Fig. 1:
Maximum average power dissipation ver-
sus average on-state current .
Fig. 2 :
Correlation between maximum average
power dissipation and maximum allowable
t
em-
peratures (T
amb
and T
case
) for different thermal
resistances heatsink+contact.
P(W)
14
α=180°
α=120°
α=60°
α=30°
α=90°
D.C.
P(W)
14
12
10
8
6
4
2
0
0
2
4
I
T(AV)
(A)
6
8
10
12
Tcase (°C)
12
10
8
Rth=8°C/W
Rth=5°C/W
Rth=3°C/W
Rth=0°C/W
110
115
6
4
2
0
0
20
40
60
80
100
120
140
α=180°
120
Tamb(°C)
125
Fig. 3:
Average and D.C. on-state current versus
case temperature.
Fig. 4:
Relative variation of thermal impedance
versus pulse duration.
I
T(AV)
(A)
14
12
10
α=180°
D.C.
K=[Zth/Rth]
1.00
Zth(j-c)
8
0.10
Zth(j-a)
6
4
2
0
0
25
Tcase(
°C)
50
75
100
125
0.01
1E-3
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
Fig. 5:
Relative variation of gate trigger currentand
holding current versus junction temperature.
Fig. 6:
Non repetitive surge peak on-state current
versus number of cycles.
I
GT
,I
H
[Tj]/I
GT
,I
H
[Tj=25°C]
2.5
2.0
1.5
I
GT
I
TSM
(A)
160
Tj initial=25
°C
F=50Hz
120
80
1.0
0.5
I
H
40
Tj(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
0
1
Number of cycles
10
100
1000
3/5
®
TN1215-G
Fig. 7:
Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I
2
t.
I
TSM
(A),I t(A s)
500
I
TSM
Tj initial=25°C
Tj=Tj max.
It
Fig. 8:
On-state characteristics(maximum values).
I
TM
(A)
100.0
10.0
100
Tj max.:
Vto=0.77V
Rt=30mΩ
1.0
tp(ms)
10
1
2
5
10
Tj=25°C
V
TM
(V)
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Fig. 9:
Thermal resistance junction to ambient ver-
sus copper surface under tab (Epoxyprinted circuit
board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0
4
8
12
S(Cu) (cm )
16
20
24
28
32
36
40
Fig. 10:
Typical reflow soldering heat profile, either
for mounting on FR4 or metal-backed boards.
T (°C)
250
200
245°C
215°C
150
100
Epoxy FR4
board
50
0
Metal-backed
board
t (s)
0
40
80
120
160
200
240
280
320 360
4/5
®
TN1215-G
PACKAGE MECHANICAL DATA
D
2
PAK
REF.
A
A1
A2
B
B2
A1
B2
B
G
A2
2.0 MIN.
FLAT ZONE
V2
C
R
A
E
L2
C2
DIMENSIONS
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
4.30
2.49
0.03
0.70
1.40
0.45
1.21
8.95
10.00
4.88
15.00
1.27
1.40
0.40
0°
8°
0°
0.60 0.017
1.36 0.047
9.35 0.352
10.28 0.393
5.28 0.192
15.85 0.590
1.40 0.050
1.75 0.055
0.016
8°
4.60 0.169
2.69 0.098
0.23 0.001
0.93 0.027
0.055
0.024
0.054
0.368
0.405
0.208
0.624
0.055
0.069
0.181
0.106
0.009
0.037
D
L
L3
C
C2
D
E
G
L
L2
L3
R
V2
FOOT PRINT DIMENSIONS
(in millimeters)
MARKING:
16.90
TN1215
x00G
10.30
1.30
5.08
3.70
8.90
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorizedfor use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
©
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco
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5/5
®
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