TN2640
TN2640
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
400V
†
R
DS(ON)
(max)
5.0Ω
V
GS(th)
(max)
2.0V
I
D(ON)
(min)
2.0A
Order Number / Package
SO-8
TN2640LG
TO-92
TN2640N3
DPAK
TN2640K4
Die
†
TN2640ND
MIL visual screening available.
Features
❏
Low threshold — 2.0V max.
❏
High input impedance
❏
Low input capacitance
❏
Fast switching speeds
❏
Low on resistance
❏
Free from secondary breakdown
❏
Low input and output leakage
❏
Complementary N- and P-channel devices
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
❏
Logic level interfaces – ideal for TTL and CMOS
❏
Solid state relays
❏
Battery operated systems
❏
Photo voltaic drives
❏
Analog switches
❏
General purpose line drivers
❏
Telecom switches
Package Options
D (TAB)
G
S
SGD
TO-92
TO-252
(D-PAK)
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
NC
NC
S
G
1
2
3
4
8
7
6
5
D
D
D
D
top view
SO-8
Note: See Package Outline section for dimensions.
12/19/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
TN2640
Thermal Characteristics
Package
TO-92
SO-8
DPAK
I
D
(continuous)*
220mA
260mA
500mA
I
D
(pulsed)
2.0A
2.0A
3.0A
Power Dissipation
@ T
C
= 25
°
C
1.0W
1.3W
†
2.5W
†
θ
jc
°
C/W
125
24
6.25
θ
ja
°
C/W
170
96
†
50
I
DR
*
220mA
260mA
500mA
I
DRM
2.0A
2.0A
3.0A
* I
D
(continuous) is limited by max rated T
j
.
†
Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
400
0.8
-2.5
2.0
-4.0
100
10
1.0
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
1.5
2.0
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
300
200
330
180
35
7.0
4.0
15
20
22
225
70
25
15
20
25
27
0.9
V
ns
V
GS
= 0V, I
SD
= 200mA
V
GS
= 0V, I
SD
= 1.0A
ns
V
DD
= 25V,
I
D
= 2.0A,
R
GEN
= 25Ω
pF
3.5
4.0
3.2
3.0
5.0
5.0
0.75
Ω
%/°C
m
Typ
Max
Unit
V
V
mV/°C
nA
µA
mA
A
Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 2.0mA
V
GS
= V
DS
, I
D
= 2.0mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 5.0V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 25V, I
D
= 100mA
V
GS
= 0V, V
DS
= 25V
f = 1.0 MHz
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
Ω
V
DD
R
L
OUTPUT
D.U.T.
TN2640
Typical Performance Curves
Output Characteristics
5.0
2.5
Saturation Characteristics
V
GS
= 10V
6V
4.0
2.0
8V
V
GS
= 10V
I
D
(amperes)
I
D
(amperes)
3.0
6V
8V
4V
1.5
4V
3V
2.0
1.0
3V
1.0
0.5
2V
0
0
10
20
30
40
2V
50
0
0
2
4
6
8
10
V
DS
(volts)
Transconductance vs. Drain Current
2.0
3.0
V
DS
(volts)
Power Dissipation vs. Temperature
1.6
DPAK
2.4
G
FS
(siemens)
V
DS
= 25V
P
D
(watts)
1.2
1.8
SO-8
1.2
TO-92
0.8
T
A
= -55°C
0.4
25°C
125°C
0
0
1.0
2.0
3.0
4.0
5.0
0.6
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
10
1.0
T
C
(°C)
Thermal Response Characteristics
TO-92 (pulsed)
1.0
DPAK (DC)
SO-8 (pulsed)
0.1
TO-92 (DC)
Thermal Resistance (normalized)
0.8
I
D
(amperes)
0.6
SO-8 (DC)
0.01
0.4
T
C
= 25°C
0.2
TO-92
TC = 25°C
PD = 1.0W
0.001
0
10
100
1000
0
0.001
0.01
0.1
1.0
10
V
DS
(volts)
t
p
(seconds)
3
TN2640
Typical Performance Curves
BV
DSS
Variation with Temperature
1.15
10
On-Resistance vs. Drain Current
V
GS
= 5V
1.10
8
BV
DSS
(normalized)
R
DS(ON)
(ohms)
1.05
6
V
GS
= 10V
1.00
4
0.95
0.9
0.90
-50
0
50
100
150
2
0
0
1.0
2.0
3.0
4.0
5.0
T
j
(°C)
Transfer Characteristics
3.0
1.4
I
D
(amperes)
V
TH
and R
DS
Variation with Temperature
2.2
25°C
2.4
1.2
V
(th)
@ 2mA
1.8
I
D
(amperes)
1.8
T
A
= -55°C
125°C
V
GS(th)
(normalized)
1.0
1.4
1.2
0.8
1.0
V
DS
= 25V
0.6
0.6
R
DS(ON)
@ 10V, 0.5A
0.6
0
0
2
4
6
8
10
0.4
-50
0
50
100
150
0.2
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
400
10
T
j
(°C)
Gate Drive Dynamic Characteristics
f = 1MHz
8
300
653pF
C (picofarads)
V
GS
(volts)
6
200
C
ISS
V
DS
= 10V
4
V
DS
= 40V
100
2
C
OSS
253pF
0
0
10
20
30
C
RSS
40
0
0
1
2
3
4
5
V
DS
(volts)
Q
G
(nanocoulombs)
12/19/01rev.1
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
R
DS(ON)
(normalized)
stm32/stm8
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