TN0104
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
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Low threshold (1.6V max.)
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
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Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TN0104
Package Options
TO-92
TN0104N3-G
-
TO-243AA (SOT-89)
-
TN0104N8-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
V
GS(th)
(max)
(V)
40
40
1.8
2.0
2.0
2.0
1.6
1.6
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
SOURCE
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300
O
C
TO-92 (N3)
GATE
TO-243AA (SOT-89) (N8)
GATE
SOURCE
DRAIN
Product Marking
S iT N
01 04
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
TN1LW
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Package may or may not include the following marks: Si or
W = Code for Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89) (N8)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
TN0104
Thermal Characteristics
Package
TO-92
TO-243AA (SOT-89)
(continuous)
(mA)
I
D
†
(pulsed)
(A)
I
D
Power Dissipation
@T
C
= 25
O
C
(W)
O
( C/W)
θ
jc
( C/W)
O
θ
ja
(mA)
I
DR
†
I
DRM
(A)
450
630
2.40
2.90
1.0
1.6
‡
125
15
170
78
‡
450
630
2.40
2.90
Notes:
† I
D
(continuous) is limited by max rated T
j
.
‡ T
A
= 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
Parameter
A
= 25
O
C unless otherwise specified)
Min
40
0.6
-
-
-
Typ
-
-
-3.8
0.1
-
-
0.35
1.1
2.6
5.0
2.3
1.5
-
0.7
450
-
-
-
3.0
7.0
6.0
5.0
1.2
-
300
Max
-
1.6
-5.0
100
1.0
100
-
-
-
-
2.5
1.8
2.0
1.0
-
70
50
15
5.0
8.0
9.0
8.0
1.8
2.0
-
Units
V
V
nA
µA
Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 500µA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125°C
V
GS
= 3.0V, V
DS
= 20V
V
GS
= 5.0V, V
DS
= 20V
V
GS
= 10V, V
DS
= 20V
V
GS
= 3.0V, I
D
= 50mA
V
GS
= 5.0V, I
D
= 250mA
V
GS
= 10V, I
D
= 1.0A
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
mV/
O
C V
GS
= V
DS
, I
D
= 1.0mA
-
-
I
D(ON)
On-state drain current
0.5
2.0
Both packages
TO-92
TO-243AA
-
-
-
-
-
340
-
-
-
-
-
-
-
TO-92
TO-243AA
-
-
-
A
R
DS(ON)
Static drain-to-source
on-state resistance
Ω
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage
drop
Reverse recovery time
%/
O
C
V
GS
= 10V, I
D
= 1.0A
mmho V
DS
= 20V, I
D
= 500mA
pF
V
GS
= 0V,
V
DS
= 20V,
f = 1.0MHz
V
DD
= 20V,
I
D
= 1.0A,
R
GEN
= 25Ω
V
ns
V
GS
= 0V, I
SD
= 1.0A
V
GS
= 0V, I
SD
= 0.5A
V
GS
= 0V, I
SD
= 1.0A
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
TN0104
Switching Waveforms and Test Circuit
V
DD
10V
90%
10%
t
(ON)
INPUT
0V
PULSE
GENERATOR
t
(OFF)
t
r
t
d(OFF)
t
F
R
L
OUTPUT
t
d(ON)
V
DD
R
GEN
10%
90%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
TN0104
Typical Performance Curves
Output Characteristics
3.75
3.75
Saturation Characteristics
3.0
VGS = 10V
3.0
I
D
(amperes)
8V
I
D
(amperes)
2.25
2.25
VGS = 10V
8V
1.5
6V
1.5
6V
0.75
4V
0.75
4V
2V
0
0
10
2V
0
50
V
DS
(volts)
20
30
40
0
2
4
6
8
10
V
DS
(volts)
Power Dissipation vs. Case Temperature
5
0.75
Transconductance vs. Drain Current
V
DS
= -25V
25V
0.60
T
A
= -55
O
C
4
G
FS
(siemens)
T
A
= 125
O
C
0.30
P
D
(watts)
0.45
T
A
= 25
O
C
3
2
TO-243AA
(T A = 25
O
C)
0.15
1
TO-92
0
0
0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
10
1.0
T
C
( C)
O
Thermal Response Characteristics
TO-243AA
T
A
= 25
O
C
P
D
= 1.6W
Thermal Resistance (normalized)
0.8
I
D
(ampe
res)
1.0
TO-92 (DC)
TO-243AA (DC)
(T A = 25
O
C)
0.6
0.4
0.1
0.2
TO-92
P
D
= 1W
T
C
= 25
O
C
0.01
0.1
1
10
0.01
0.1
1
10
100
0
0.001
V
DS
(volts)
t
p
(seconds)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
TN0104
Typical Performance Curves
(cont.)
1.3
BV
DSS
Variation with Temperature
10
On-Resistance vs. Drain Current
V
GS
= 5V
1.2
8
BV
DSS
(normalized)
R
DS(ON)
(oh
ms)
1.1
6
1.0
4
V
GS
= 10V
0.9
2
0.8
-50
0
50
100
150
0
0
1
2
T
j
(
O
C)
Transfer Characteristics
3.0
I
D
(amperes)
1.4
V
(th)
and R
DS
Variation with Temperature
T
A
= -55
O
C
1.4
V
DS
= 25V
2.4
25
O
C
1.2
1.2
V
GS(th)
(normalized)
1.8
125
O
C
1.0
R
DS(ON)
@ 5V, 0.25A
1.0
1.2
0.8
V
(th)
@ 0.5mA
0.8
0.6
0.6
0.6
0
0.4
0
2
4
6
8
10
-50
0
50
100
150
0.4
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
100
10
T
j
(
O
C)
Gate Drive Dynamic Characteristics
V
DS
= 10V
8
f = 1MHz
75
55pF
40V
C (picofarads)
50
C
ISS
V
GS
(volts)
6
4
25
C
OSS
2
C
RSS
0
0
10
20
30
40
0
50pF
0.5
0.65
0.8
0.95
1.1
1.25
V
DS
(volts)
Q
G
(nanocoulombs)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
5
R
DS(ON)
(normalized)
I
D
(amperes)
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