Tyco/Electronics
Raychem Corporation
308 Constitution Drive
Menlo Park, CA 94025
800-227-4856
FAX 800-227-4866
PolySwitch®
SiBar
Thyristor Surge Protectors
PRODUCT: TVB270SA
DOCUMENT: 24305
PCN: 574139
REV LETTER: B
REV DATE: AUGUST 16, 2001
PAGE NO.: 1 OF 2
Specification Status: RELEASED
PHYSICAL DESCRIPTION
A
MIN
MAX
MIN
B
MAX
MIN
C
MAX
MIN
D*
MAX
MIN
H
MAX
MIN
J
MAX
MIN
K
MAX
P
REF
MIN
S
MAX
mm: 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 .051
in: .160 .180 .130 .150 .075 .095 .077 .083 .002
* D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P
Other Physical Characteristics
.152
.006
0.15
.006
0.30
.012
0.76
.030
1.27
.050
0.51
.020
5.21
.205
5.59
.220
Form Factor:
Lead Material:
Encapsulation Material:
Solderability:
Solder Heat Withstand:
Solvent Resistance:
Mechanical Shock:
Tape and Reel packaging per EIA 481-1
SMB (Surface Mount DO-214 Package)
Tin/lead finish
Epoxy, meets UL94 V-0 requirements
per MIL-STD-750, Method 2026
per MIL-STD-750, Method 2031
per MIL-STD-750, Method 1022
per MIL-STD-750, Method 2016
Tyco/Electronics
Raychem Corporation
308 Constitution Drive
Menlo Park, CA 94025
800-227-4856
FAX 800-227-4866
PolySwitch®
SiBar
Thyristor Surge Protectors
PRODUCT: TVB270SA
DOCUMENT: 24305
PCN: 574139
REV LETTER: B
REV DATE: AUGUST 16, 2001
PAGE NO.: 2 OF 2
DEVICE RATINGS @ 25º C (Both Polarities)
Parameter
Off-State Voltage, Maximum at
ID
= 5 µA
Non-Repetitive Peak Impulse Current
Double exponential waveform (Notes 1 and 2)
10x1000 µsec
10/560 µsec
10/160 µsec
Symbol
VDM
IPP
1
IPP
2
IPP
3
di/dt
Value
270
50
70
100
150
Units
V
A
A
A
A/µs
Critical Rate of Rise of On-State Current
Maximum 2x10 µsec waveform,
VOC=2.5kV, ISC=500A
peak
DEVICE THERMAL RATINGS
Storage Temperature Range
Operating Temperature Range
Blocking or conducting state
Overload Junction Temperature
Maximum; Conducting state only
TSTG
TA
TJ
-65 to 150
-40 to 125
+175
ºC
ºC
ºC
ELECTRICAL CHARACTERISTICS Both polarities (T
J
@ 25ºC unless otherwise noted)
Characteristics
Symbol
Min
Breakover Voltage
(+25ºC)
----
VBO
dV/dt = 100V/µsec,
I
sc
=1.0A,
V
DC
= 1000V
Breakover Voltage
(+25ºC)
f=60Hz,
I
SC
=1.0Arms,
V
OC
= 1000Vrms,
R=1.0 kΩ, t = 0.5 cycle (Note 2)
Breakover Voltage Temperature Coefficient
Off-State Current
(VD1= 50V)
(VD2=
VDM)
On-State Voltage
(IT=1A)
PW
≤
300 µsec, Duty Cycle
≤
2% (Note 2)
Breakover Current
Holding Current (Note 2)
Critical Rate of Rise of Off-State Voltage
(Linear waveform,
V
D
= 0.8 X Rated
V
BO
,
T
J
= +25ºC)
Capacitance
(f=1.0 Mhz, 50V
DC
bias, 1 Vrms)
(f=1.0 Mhz, 2V
DC
bias, 15mVrms)
Note 1. Allow cooling before test second polarity
Note 2. Measured under pulse conditions to reduce heating
Typ
310
Max
370
Units
V
VBO
----
310
370
V
dVBO/dTJ
ID1
ID2
VT
IBO
IH
dv/dt
C1
C2
----
----
----
----
----
175
2000
----
----
0.08
-----
-----
-----
230
350
----
20
50
-----
2.0
5.0
5.0
-----
----
----
----
%/ºC
µA
µA
V
mA
mA
V/µs
pF
pF
VOLTAGE-CURRENT CHARACTERISTIC
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