RO3101
•
•
•
•
•
Ideal for 433.92 MHz Transmitters
Very Low Series Resistance
Quartz Stability
Rugged, Hermetic, Low-Profile TO39 Case
Complies with Directive 2002/95/EC (RoHS)
Pb
The RO3101 is a true one-port, surface-acoustic-wave (SAW) resonator in a low-profile TO39 case. It
provides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency transmitters operating
at 433.92 MHz. The RO3101 is designed specifically for remote-control and wireless security transmitters
operating in Europe under ETSI I-ETS 300 220 and in Germany under FTZ 17 TR 2100.
433.92 MHz
SAW
Resonator
Absolute Maximum Ratings
Rating
CW RF Power Dissipation
DC Voltage Between Any Two Pins
Case Temperature
Soldering Temperature (10 seconds / 5 cycles Max.)
Value
+0
±30
-40 to +85
260
Units
dBm
VDC
°C
°C
TO39-3 Case
Typical
Maximum
433.995
±75
1.5
7400
900
2.0
Units
MHz
kHz
dB
Electrical Characteristics
Characteristic
Center Frequency (+25 °C)
Insertion Loss
Quality Factor
Temperature Stability
Unloaded Q
50
Ω
Loaded Q
Turnover Temperature
Turnover Frequency
Frequency Temperature Coefficient
Frequency Aging
RF Equivalent RLC Model
Absolute Value during the First Year
Motional Resistance
Motional Inductance
Motional Capacitance
Pin 1 to Pin 2 Static Capacitance
Transducer Static Capacitance
Test Fixture Shunt Inductance
Lid Symbolization (in Addition to Lot and/or Date Codes)
DC Insulation Resistance between Any Two Pins
R
M
L
M
C
M
C
O
C
P
L
TEST
5, 6, 9
5, 6, 7, 9
2, 7
5, 7, 9
Absolute Frequency
Tolerance from 433.920 MHz
Sym
f
C
Δf
C
IL
Q
U
Q
L
T
O
f
O
FTC
|f
A
|
1
5
1.0
13.7
37.1
3.6
2.7
2.5
50.0
RFM RO3101
6, 7, 8
Notes
2, 3, 4, 5
2, 5, 6
5, 6, 7
10
Minimum
433.845
25
f
c
+ 2.7
0.037
≤10
40
°C
kHz
ppm/°C
2
ppm/yr
MΩ
Ω
µH
fF
pF
pF
nH
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1.
2.
3.
4.
5.
6.
Frequency aging is the change in f
C
with time and is specified at +65°C or
less. Aging may exceed the specification for prolonged temperatures
above +65°C. Typically, aging is greatest the first year after manufacture,
decreasing significantly in subsequent years.
The center frequency, f
C
, is measured at the minimum insertion loss point,
IL
MIN
, with the resonator in the 50
Ω
test system (VSWR
≤
1.2:1). The
shunt inductance, L
TEST
, is tuned for parallel resonance with C
O
at f
C
.
Typically, f
OSCILLATOR
or f
TRANSMITTER
is less than the resonator f
C
.
One or more of the following United States patents apply: 4,454,488 and
4,616,197 and others pending.
Typically, equipment designs utilizing this device require emissions testing
and government approval, which is the responsibility of the equipment
manufacturer.
Unless noted otherwise, case temperature T
C
= +25°C±2°C.
The design, manufacturing process, and specifications of this device are
7.
8.
9.
subject to change without notice.
Derived mathematically from one or more of the following directly
measured parameters: f
C
, IL, 3 dB bandwidth, f
C
versus T
C
, and C
O
.
Turnover temperature, T
O
, is the temperature of maximum (or turnover)
frequency, f
O
. The nominal frequency at any case temperature, T
C
, may be
calculated from: f = f
O
[1 - FTC (T
O
-T
C
)
2
]. Typically,
oscillator
T
O
is 20°C
less than the specified
resonator
T
O
.
This equivalent RLC model approximates resonator performance near the
resonant frequency and is provided for reference only. The capacitance C
O
is the static (nonmotional) capacitance between pin1 and pin 2 measured
at low frequency (10 MHz) with a capacitance meter. The measurement
includes case parasitic capacitance with a floating case. For usual
grounded case applications (with ground connected to either pin 1 or pin 2
and to the case), add approximately 0.25 pF to C
O
.
www.RFM.com
E-mail: info@rfm.com
©2008 by RF Monolithics, Inc.
Page 1 of 2
RO3101 - 3/26/08
Electrical Connections
This one-port, two-terminal SAW resonator is bidirectional. The terminals
are interchangeable with the exception of circuit board layout.
Temperature Characteristics
The curve shown on the right
accounts for resonator
contribution only and does not
include oscillator temperature
characteristics.
f
C
= f
O
, T
C
= T
O
0
(f-fo ) / fo (ppm)
0
-50
-100
-150
-200
0 +20 +40 +60 +80
Pin
1
2
3
Connection
Terminal 1
Terminal 2
Case Ground
Pin 3
Pin 1
Bottom View
Pin 2
-50
-100
-150
-200
-80 -60 -40 -20
Typical Test Circuit
The test circuit inductor, L
TEST
, is tuned to resonate with the static
capacitance, C
O
at F
C
.
Δ
T = T
C
- T
O
( °C )
Electrical Test:
Ω
Network
Analyzer
1
2
Equivalent LC Model
The following equivalent LC model is valid near resonance:
Ω
Network
Analyzer
1
2
3
Cp
Co= Cp + 0.25 pF*
*Case Parasitics
R
M
L
M
C
M
0.5 pF*
Power Test:
0.5 pF*
P
INCIDENT
1
Low-Loss
Matching
Network
to 50
Ω
3
50
Ω
Source at
P
REFLECTED
F
C
3
2
Case Design
C
G
B
H
F
A
E
D
(3 places)
J
(2 places)
CW RF Power Dissipation =
-P
P
INCIDENT
REFLECTED
Typical Application Circuits
Typical Low-Power Transmitter Application:
200k
Ω
Modulation
Input
MPS-H10
+9VDC
47
C1
45°
L1
1
2
(Antenna)
C2
Millimeters
Dimensions
RF Bypass
Inches
Min
Max
0.370
0.125
0.098
0.138
0.018 Nominal
0.200 Nominal
0.100 Nominal
0.100 Nominal
0.040
0.055
ROXXXX
Bottom View
3
470
Min
A
B
C
D
2.50
Max
9.40
3.18
3.50
Typical Local Oscillator Application:
Output
C1
1
2
0.46 Nominal
5.08 Nominal
2.54 Nominal
2.54 Nominal
1.02
1.40
+VDC
L1
E
F
G
H
J
+VDC
C2
ROXXXX
Bottom View
3
RF Bypass
www.RFM.com
E-mail: info@rfm.com
©2008 by RF Monolithics, Inc.
Page 2 of 2
RO3101 - 3/26/08
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