1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
CMOS LPRAM
Revision History
Revision
No.
0.0
Initial Draft
Revised Load Condition
Revised I/O power (1.7V to VCC
2.7V to VCC)
Revised VIH (VCC-0.4
0.8VCCQ)
Revised VIL (0.4
0.2VCCQ)
Revised ISB1 (110uA
100uA)
Revised ISB0c (110uA
100uA)
Revised ISB0b (100uA
80uA)
Revised ISB0a (90uA
70uA)
Correct typo in Array Refresh Area of Mode Register Set
Removed Page Write Operation
History
Draft date
Dec,08
th
, 2008
Remark
Preliminary
0.1
Jul. 3
rd
, 2009
Preliminary
0.2
Nov. 25
th
, 2009
Preliminary
0.3
0.4
Feb. 3
rd
, 2010
Jul. 21
st
, 2010
Preliminary
Final
1
Revision 0.4
Jul. 2010
FMP1617DAx
CMOS LPRAM
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FEATURES
•
Process Technology : Full CMOS
• Organization : 1M x 16
• Power Supply Voltage : 2.7~3.3V
• Three state output and TTL Compatible
• Separated I/O power(VCCQ) & Core power(VCC)
• Operating Temperature Ranges:
Special (-10’C to +60’C)
Commercial (0’C to +70’C)
Extended (-25’C to +85’C)
Industrial (-40’C to +85’C)
•Package Type : 48-FBGA-6.00x8.00 mm
2
FMP1617DAx-HxxX : Pb-Free & Halogen Free
• Low Power & Page Modes
FMP1617DA1 : support the PASR/DPD function
FMP1617DA2 : support the Direct DPD function
FMP1617DA4 : support the PASR/DPD/PAGE function
FMP1617DA5 : support the Direct DPD/PAGE function
• Page read/write operation by 16 words
(FMP1617DA4, FMP1617DA5)
• DPD mode by using MRS only
(FMP1617DA1, FMP1617DA4)
• Direct DPD mode when /ZZ goes low
(FMP1617DA2, FMP1617DA5)
PRODUCT FAMILY
Operating
Voltage (V)
Product Family
Min. Typ. Max.
FMP1617DAx-H60E
FMP1617DAx-H70E
60ns
70ns
Speed
Typ.
1.5mA
Power Dissipation
ICC1
f = 1MHz
Max.
3mA
ICC2
f = fmax
Typ.
15mA
12mA
Max.
20mA
ISB1
(CMOS Standby
Current)
Typ.
70uA
Max.
100uA
2.7
3.0
3.3
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and T
A
= 25C.
2.
H=FBGA(Pb-Free
& Halogen Free),
W=WAFER
3. Operating Temperature Range:
S
(-10’C~60’C),
C(0’C~70’C), E(-25’C~85’C), I
(-40’C~85’C)
PIN DESCRIPTION
1
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
A
B
C
D
E
F
G
H
/LB
/OE
A0
A1
A2
/ZZ
I/O1
VCC
VSS
I/O9
/UB
A3
A4
/CS
I/O10
I/O11
A5
A6
I/O2
I/O3
Row
Addresses
Row
select
Memory array
VSS
I/O12
A17
A7
I/O4
VCC
VCCQ
I/O13
DNU
A16
I/O5
VSS
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O1~I/O8
Data
cont
I/O Circuit
Column select
I/O16
A19
A12
A13
WE
I/O8
I/O9~I/O16
Data
cont
A18
A8
A9
A10
A11
NC
48-FBGA : Top View(Ball Down)
Name
/ZZ
/CS
/OE
/WE
A0~A19
I/O1~I/O16
Function
Low Power Modes
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Data Inputs/Outputs
Name
VCC
VCCQ
VSS
/UB
/LB
DNU
Function
Core Power
I/O Power
Ground
Upper Byte(I/O9~16)
Lower Byte(I/O 1~8)
Do Not Use
/CS
/OE
/WE
Control Logic
/UB
/LB
/ZZ
Data
cont
Column Addresses
2
Revision 0.4
Jul. 2010
FMP1617DAx
PRODUCT LIST
Part Name
FMP1617DAx-H60E
FMP1617DAx-H70E
1.
H=FBGA(Pb-Free
& Halogen Free),
W=WAFER
2. Operating Temperature Range:
S
(-10’C~60’C),
C(0’C~70’C), E(-25’C~85’C), I
(-40’C~85’C)
CMOS LPRAM
Function
60ns, VCC=3.0V, VCCQ=3.0V
70ns, VCC=3.0V, VCCQ=3.0V
FUNCTIONAL DESCRIPTION
/CS
H
X
1)
H
X
1)
L
/ZZ
H
L
L
H
H
H
/OE
X
1)
X
1)
X
1)
X
1)
H
H
/WE
X
1)
X
1)
X
1)
X
1)
H
H
/LB
X
1)
X
1)
X
1)
H
L
X
1)
L
L
L
H
X
1)
L
H
H
L
L
H
L
1. X means don’t care.(Must be low or high state)
2. In case of FMP1617DA2 & FMP1617DA5 product
3. In case of FMP1617DA1 & FMP1617DA4 product
/UB
X
1)
X
1)
X
1)
H
X
1)
L
H
L
L
H
L
L
I/O1-8
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O9-16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Deselected
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Direct DPD
2)
Low Power Modes
3)
Standby
Active
Active
Active
Active
Active
Active
Active
Active
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to VSS
Voltage on VCC supply relative to VSS
Power Dissipation
Storage temperature
Symbol
VIN, VOUT
VCC
PD
TSTG
Ratings
-0.5 to VCC+0.3V
-0.2 to 3.6
1.0
-65 to 150
Unit
V
V
W
’C
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation should be restricted to
recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
FMP1617DAx
Item
Supply voltage
I/O operating voltage (VCCQ
≤
VCC)
Ground
Input high voltage
Input low voltage
Note :
1. Overshoot : Vcc+1.0V in case of pulse width≤20ns.
2. Undershoot : -1.0V in case of pulse width≤20ns.
3. Overshoot and undershoot are sampled, not 100% tested.
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