2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
CMOS LPRAM
Revision History
Revision
No.
0.0
0.1
0.2
Initial Draft
Revised P/N according to the new P/N system
Revised ISB1 to 120uA
History
Draft date
Nov.10
th
, 2005
Jun.1
st
, 2006
Feb.2
nd
, 2007
Remark
Preliminary
1
Revision 0.2
Feb. 2007
FMP3217BA0(7)
FEATURES
•
Process Technology : Full CMOS
• Organization : 2M x 16
• Power Supply Voltage : 2.7~3.3V
• Dual CS & Page Modes
FMP3217BA0 : Dual CS
FMP3217BA7 : Page mode with Dual CS
CMOS LPRAM
2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
• Three state output and TTL Compatible
• Package Type : 48-FBGA-6.00x8.00 mm
2
FMP3217BA0(7)-FxxX : Normal
FMP3217BA0(7)-GxxX : Pb-Free
FMP3217BA0(7)-HxxX : Pb-Free & Halogen Free
• Operating Temperature Ranges:
Special (-10’C to +60’C)
Commercial (0’C to +70’C)
Extended (-25’C to +85’C)
Industrial (-40’C to +85’C)
• Separated I/O power(VCCQ) & Core Power(VCC)
• Easy memory expansion with /CS1, CS2, and /OE features
• Automatic power-down when deselected
PRODUCT FAMILY
Operating
Voltage (V)
Product Family
Min. Typ. Max.
FMP3217BA0(7)-H60E
FMP3217BA0(7)-H70E
60ns
70ns
Speed
Typ.
1.5mA
Power Dissipation
ICC1
f = 1MHz
Max.
3mA
ICC2
f = fmax
Typ.
15mA
12mA
Max.
20mA
ISB1
(CMOS Standby
Current)
Typ.
80uA
Max.
120uA
2.7
3.0
3.3
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and T
A
= 25C.
2.
F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free
& Halogen Free),
W=WAFER
3. Operating Temperature Range:
S
(-10’C~60’C),
C(0’C~70’C), E(-25’C~85’C), I
(-40’C~85’C)
PIN DESCRIPTION
1
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
A
B
C
D
E
F
G
H
/LB
/OE
A0
A1
A2
CS2
Clk gen.
Precharge circuit.
I/O9
/UB
A3
A4
/CS1
I/O1
VCC
VSS
I/O10
I/O11
A5
A6
I/O2
I/O3
Row
Addresses
Row
select
Memory array
VSS
I/O12
A17
A7
I/O4
VCC
VCCQ
I/O13
DNU
A16
I/O5
VSS
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O1~I/O8
Data
cont
I/O Circuit
Column select
I/O16
A19
A12
A13
WE
I/O8
A18
A8
A9
A10
A11
A20
I/O9~I/O16
Data
cont
48-FBGA : Top View(Ball Down)
Data
cont
Column Addresses
Name
CS2
/CS1
/OE
/WE
A0~A20
I/O1~I/O16
Function
Chip Select Input
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Data Inputs/Outputs
Name
VCC
VCCQ
VSS
/UB
/LB
DNU
Function
Core Power
I/O Power
Ground
Upper Byte(I/O9~16)
Lower Byte(I/O 1~8)
Do Not Use
/CS1
CS2
/OE
Control Logic
/WE
/UB
/LB
2
Revision 0.2
Feb. 2007
FMP3217BA0(7)
PRODUCT LIST
Part Name
FMP3217BA0(7)-H60E
FMP3217BA0(7)-H70E
Function
CMOS LPRAM
48-FBGA, 60ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V)
48-FBGA, 70ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V)
1.
F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free
& Halogen Free),
W=WAFER
2. Operating Temperature Range:
S
(-10’C~60’C),
C(0’C~70’C), E(-25’C~85’C), I
(-40’C~85’C)
FUNCTIONAL DESCRIPTION
/CS1
H
X
1)
X
1)
L
H
H
H
X
1)
L
L
L
H
L
X
1)
L
H
L
1. X means don’t care.(Must be low or high state)
CS2
H
L
H
H
/OE
X
1)
X
1)
X
1)
H
/WE
X
1)
X
1)
X
1)
H
/LB
X
1)
X
1)
H
L
/UB
X
1)
X
1)
H
X
1)
L
H
L
L
H
L
L
I/O1-8
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O9-16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselect/Power-down
Deselect/Power-down
Deselect/Power-down
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
H
H
L
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Symbol
V
IN
, V
OUT
Vcc
P
D
T
STG
Ratings
-0.2 to Vcc+0.3V
-0.2 to 3.6
1.0
-65 to 150
Unit
V
V
W
’C
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation should be restricted to
recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
FMP3217BA
Item
Supply voltage
I/O operating voltage (VCCQ
≤
VCC)
Ground
Input high voltage
Input low voltage
Symbol
Min
V
CC
V
CCQ
V
SS
V
IH
V
IL
2.7
2.7
0
0.8VCCQ
-0.2
2)
Max
3.3
3.3
0
VCC+0.21
1
)
Unit
Min
2.7
2.25
0
0.8VCCQ
-0.2
2)
Max
3.3
2.75
0
VCC+0.2
1)
0.2VCCQ
Min
2.7
1.65
0
0.8VCCQ
-0.2
2)
Max
3.3
1.95
0
VCC+0.2
1)
0.2VCCQ
V
V
V
V
V
0.2VCCQ
Note :
1. Overshoot : Vcc+1.0V in case of pulse width≤20ns.
2. Undershoot : -1.0V in case of pulse width≤20ns.
3. Overshoot and undershoot are sampled, not 100% tested.
3
Revision 0.2
Feb. 2007
FMP3217BA0(7)
CAPACITANCE
1)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
CMOS LPRAM
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
8
Unit
pF
pF
(f=1MHz , T
A
=25’C)
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Symbol
I
LI
I
LO
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
V
OL
V
OH
I
SB
I
SB1
Cycle time=Min, I
IO
=0mA, 100% duty, /CS=V
IL
, CS2=V
IH
,
V
IN
=V
IL
or V
IH
I
OL
=0.5mA
I
OH
=-0.5mA
/CS=V
IH
, CS2=V
IH
, Other inputs=V
IH
or V
IL
/CS≥V
CC
-0.2V, CS2≤0.2V, Other inputs=0~V
CC
0.8VCCQ
-
-
-
-
0.3
120
-
-
20
0.2VCCQ
mA
V
V
mA
uA
V
IN
=V
SS
to V
CC
/CS=V
IH
, CS2=V
IH
, /OE=V
IH
or /WE=V
IL
, V
IO
=V
SS
to V
CC
Cycle time=1us, 100%duty, I
IO
=0mA, /CS≤0.2V, CS2=V
IH
,
V
IN
≤0.2V
or V
IN
≥V
CC
-0.2V
Test Conditions
Min
-1
-1
-
Typ
-
-
-
Max
1
1
3
Unit
uA
uA
mA
Operating Range
Device
FMP3217BA0(7)-XxxS
FMP3217BA0(7)-XxxC
FMP3217BA0(7)-XxxE
FMP3217BA0(7)-XxxI
Range
Special
Commercial
Extended
Industrial
Ambient Temperature
-10℃ to +60℃
0℃ to +70℃
2.7V to 3.3V
-25℃ to +85℃
-40℃ to +85℃
1.65V to V
cc
V
DD
V
DDQ
4
Revision 0.2
Feb. 2007
FMP3217BA0(7)
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Input/Output Reference)
Input pulse level : 0.2 to VCC-0.2V
Input rising and falling time : 5ns
Input and output reference voltage : 0.5*VCCQ
Output load(see right) : C
L
=30pF+1TTL
30pf
CMOS LPRAM
1TTL
AC CHARACTERISTICS
(V
CC
=2.7V~3.3V)
Speed Bins
Parameter List
Symbol
Min
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
/UB, /LB Access Time
Chip Select to Low-Z Output
Read
/UB, /LB Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High- Z Output
/UB, /LB Disable to High- Z Output
Output Disable to High- Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
/UB, /LB Valid to End of Write
Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
Page Mode Cycle Time
Page
Page Mode Address Access Time
Maximum Cycle Time
/CS High Pulse Width
tBLZ
tOLZ
tHZ
tBHZ
tOHZ
tOH
tWC
tCW
tAS
tAW
tBW
tWP
tWR
tWHZ
tDW
tDH
tOW
tPC
tPAA
tMRC
tCP
10
5
0
0
0
5
60
50
0
50
50
50
0
0
20
0
5
20
-
-
10
-
-
5
5
5
-
20k
-
-
-
-
-
-
5
-
-
-
-
20
20k
-
10
5
0
0
0
5
70
60
0
60
60
50
0
0
20
0
5
25
-
-
10
-
-
5
5
5
-
20k
-
-
-
-
-
-
5
-
-
-
-
25
20k
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tRC
tAA
tCO
tOE
tBA
tLZ
60
-
-
-
-
10
60ns
Max
20k
60
60
25
60
-
Min
70
-
-
-
-
10
70ns
Max
20k
70
70
25
70
-
ns
ns
ns
ns
ns
ns
Units
1. /CS High Pulse Width is defined by /CS or (/UB and /LB) because /UB & /LB can make standby mode when /UB=High and /LB=High.
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