Preliminary Data Sheet
2.1
FMS2013
SPDT GaAs High Isolation Absorptive Switch DC-4 GHz
Features:
♦
♦
♦
♦
♦
Available as RF Known Good Die
Excellent low control voltage performance
Excellent harmonic performance
Very high isolation >49dB typ. up to 4GHz
Very low Tx Insertion loss <1.0 dB at 4GHz
Functional Schematic
RF01
V2
V1
RFIN
RF02
Description and Applications:
The FMS2013 is a low loss, high power, linear single-pole double-throw Gallium Arsenide switch
designed for general purpose applications over the frequency range DC-4GHz. The die is fabricated
using the Filtronic FL05 0.5µm switch process technology which offers market leading performance
optimised for switch applications.
Electrical Specifications:
Parameter
Tx Insertion Loss
Rx Insertion Loss
Return Loss
VSWR On State
VSWR Off State
Isolation at 4 GHz
2nd Harmonic Level
(T
OP
= 25°C,V
ctrl
= 0V/2.5V, Z
IN
= Z
OUT
= 50Ω)
Test Conditions
4GHz
4GHz
4GHz
4GHz
4GHz
4GHz
3GHz, Pin = 21dBm, Vctrl = 3V
3GHz, Pin = 27dBm, Vctrl = 5V
Min
Typ
1.0
1.0
15
1:1.3
1:1.4
49
-72
-68
30
Max
Units
dB
dB
dB
dB
dBc
dBc
ns
Switching speed
Pin = 21dBm, 10% to 90% RF
Note:
External DC blocking capacitors are required on all RF ports (typ: 47pF).
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email:
sales@filss.com
Website: www.filcs.com
Preliminary Data Sheet
2.1
FMS2013
Absolute Maximum Ratings:
Parameter
Max Input Power
Control Voltage
Operating Temperature
Storage Temperature
Symbol
P
in
V
ctrl
T
OP
T
OP
Absolute Maximum
+30dBm
+5V
-40°C to +100°C
-55°C to +150°C
Note:
Exceeding any one of these absolute maximum ratings may cause permanent damage to the
device.
Truth Table:
V
ctrl1
High
Low
V
ctrl2
Low
High
RFIN-RF01
On
Off
RFIN-RF02
Off
On
Note:
‘High’
‘Low’
= >2.5V & <5V
= <0.2V
Pad and Die Layout:
E
D
C
B
A
H
Pad
Reference
A
B
Pad
Name
G1
RFI
C2
C1
RFO1
G2
G3
RFO2
Description
GND1
RFIN
Vctrl1
Vctrl2
RFO1
GND2
GND3
RFO2
Pin Coordinates
(µm)
159 , 286
159 , 446
159 , 606
159 , 766
757 , 857
757 , 555
757 , 414
757 , 112
F
G
C
D
E
F
G
H
Note:
Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the
bond pad opening
Die Size (µm)
870 x 970
Die Thickness
(µm)
150
Min. Bond Pad
Pitch (µm)
141
Min. Bond pad
Opening (µm)
94 x 94
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email:
sales@filss.com
Website: www.filcs.com
Preliminary Data Sheet
2.1
FMS2013
Typical Measured Performance Curves Mounted on Evaluation Board:
2
-20
Off State
On State
Isolation (dB)
1.8
VSWR
1.6
1.4
1.2
1
0
-30
-40
-50
-60
Isolation (dB)
2
4
Frequency (GHz)
6
-70
0
2
4
Frequency (GHz)
6
VSWR vs. Frequency
Isolation vs. Frequency
0
dB(S21)
-0.8
-1
Loss (dB)
-1.2
-1.4
-1.6
-1.8
20
2
4
6
3V
5V
-0.5
Loss (dB)
-1
-1.5
-2
3e-005
22
24
26
28
Input Power (dBm)
30
Insertion Loss vs. Frequency
Insertion Loss vs. Power
3
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email:
sales@filss.com
Website: www.filcs.com
Preliminary Data Sheet
2.1
FMS2013
Evaluation Board:
V1 GRD V2
RFO1
C1
C2
C4
C6
C7
RFIN
C3
C5
RFO2
Label
C1, C2
C3, C4, C5
C6, C7
Component
Capacitor, 470pF, 0603
Capacitor, 100pF, 0202
Capacitor, 47pF, 0402
Evaluation Board De-Embedding Data (Measured):
0
-10
S11 (dB)
-20
-30
-40
3e-005
S11 (dB)
0
-0.2
Loss (dB)
-0.4
-0.6
-0.8
-1
Loss (dB)
2
4
Frequency (GHz)
6
0
2
4
Frequency (GHz)
6
Return Loss vs. Frequency
-20
Isolation (dB)
-30
Isolation (dB)
Insertion Loss vs. Frequency
-40
-50
-60
-70
0
2
4
Frequency (GHz)
6
Isolation vs. Frequency
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email:
sales@filss.com
Website: www.filcs.com
Preliminary Data Sheet
2.1
FMS2013
Ordering Information:
Part Number
FMS2013-000-WP
FMS2013-000-GP
FMS2013-000-EB
FMS2013-000-FF
Description
Die – waffle pak
Die – gel pak
Die mounted on evaluation board
Wafer mounted on film frame
Preferred Assembly Instructions:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be
used where possible.
The back of the die is not metallised and the recommended mounting method is by the use of
conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid
encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height.
For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1
LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in
an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with
dry nitrogen.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is
recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A
nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective
results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique,
stage temperature should not be raised above 200°C and bond force should not be raised above 60g.
Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve
good wire bonds.
Bonds should be made from the die first and then to the mounting substrate or package. The physical
length of the bondwires should be minimised especially when making RF or ground connections.
Handling Precautions:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No.
22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-
HDBK-263.
Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email:
sales@filss.com
Website: www.filcs.com
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