Preliminary Data Sheet
2.1
FMS2016QFN-1
High Power Reflective GaAs SP4T Switch
Features:
♦
♦
♦
♦
♦
♦
♦
3x3x0.9mm Packaged pHEMT Switch
NiPdAu finish for Military and High
reliability applications
Excellent low control voltage performance
Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels
Very high isolation: >29dB at 1.8GHz
Very low Insertion loss: 0.65dB at 1.8GHz
Very low control current
Functional Schematic
ANT
RF1
RF2
RF3
RF4
Description and Applications:
The FMS2016QFN is a low loss, high power and linear single pole four throw Gallium Arsenide
antenna switch designed for use in mobile handset applications. The die is fabricated using the
Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for
switch applications. The FMS2016QFN is designed for use in dual/tri and quad band GSM handset
antenna switch modules and RF front-end modules. It can also find use in other applications where
high power and linear RF switching is necessary.
Electrical Specifications:
Parameter
Insertion Loss
(T
AMBIENT
= 25°C,V
ctrl
= 0V/2.5V, Z
IN
= Z
OUT
= 50Ω)
Test Conditions
0.5 – 1.0 GHz
1.0 – 2.0 GHz
Min
Typ
<0.55
<0.65
20
34
32
34
32
34
30
-75
-75
-75
-75
<0.3
Max
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBc
dBc
dBc
dBc
µs
Return Loss
Isolation
RF1 – RF3 and RF2 – RF4
Isolation
RF1 – RF2
Isolation
RF3 – RF4
2nd Harmonic Level
0.5 – 2.5 GHz
0.5 – 1.0 GHz
1.0 – 2.0 GHz
0.5 – 1.0 GHz
1.0 – 2.0 GHz
0.5 – 1.0 GHz
1.0 – 2.0 GHz
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
Switching speed : Trise, Tfall
Ton, Toff
Control Current
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
+35dBm RF input @1GHz
1.0
<10
µs
µA
Note:
External DC blocking capacitors are required on all RF ports (typ: 100pF)
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850-5790
Fax: +1 (408) 850-5766
Email:
sales@filcsi.com
Website: www.filtronic.com
Preliminary Data Sheet
2.1
FMS2016QFN-1
Absolute Maximum Ratings:
Parameter
Max Input Power
Control Voltage
Operating Temp
Storage Temp
Symbol
Pin
V ctrl
T oper
T stor
Absolute Maximum
+38dBm
+5V
-40°C to +100°C
-55°C to +150°C
Note:
Exceeding any one of these absolute maximum ratings may cause permanent damage to the
device.
Truth Table:
Switch
State
(A)
V1
V2
V3
V4
ANT
TO
RF1
Insertion
Loss
Isolation
ANT
TO
RF2
Isolation
Insertion
Loss
Isolation
ANT
TO
RF1
Isolation
ANT
TO
RF2
Isolation
HIGH
LOW
LOW
LOW
(B)
LOW
HIGH
LOW
LOW
Isolation
Insertion
Loss
Isolation
Isolation
(C)
LOW
LOW
HIGH
LOW
Isolation
Isolation
Insertion
Loss
(D)
LOW
LOW
LOW
HIGH
Isolation
Isolation
General Test Conditions:
Bias Voltages
Port Impedances
Off arm termination
LOW = 0V to 0.2V
HIGH +2.5V to +5V
50Ω
50Ω
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850-5790
Fax: +1 (408) 850-5766
Email:
sales@filcsi.com
Website: www.filtronic.com
Preliminary Data Sheet
2.1
FMS2016QFN-1
Typical Measured Performance on Evaluation Board (De-Embedded):
(Measurement Conditions V
CTRL
= 2.5V (high) & 0V (low), T
AMBIENT
= 25°C unless otherwise stated)
0
-0.1
-0.2
-0.3
-0.4
-0.5
dB
FMS2016QFN INSERTION LOSS
0
-5
-10
-15
dB
-20
-25
-30
-35
-40
FMS2016QFN RF1 to RF2 ISOLATION
-0.6
-0.7
-0.8
-0.9
-1
-1.1
-1.2
0.5
1
1.5
2
2.5
Frequency (GHz)
3
3.5
0.5
1
1.5
2
2.5
Frequency (GHz)
3
3.5
0
-5
-10
-15
dB
FMS2016QFN RF3 to RF4 ISOLATION
0
-5
-10
-15
dB
-20
-25
-30
-35
-40
FMS2016QFN RF1 to RF3 and RF2 to RF4 ISOLATION
-20
-25
-30
-35
-40
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
-15
FMS2016QFN RETURN LOSS
-20
-25
dB
-30
-35
-40
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
3
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850-5790
Fax: +1 (408) 850-5766
Email:
sales@filcsi.com
Website: www.filtronic.com
Preliminary Data Sheet
2.1
FMS2016QFN-1
Pad Layout:
V1
ANT
V2
Pin Number
1
Description
RF1
GND
RF3
V3
N/C
V4
RF4
GND
RF2
V2
ANT RF
V1
GND
Pin 1
RF1
GND
RF3
2
3
12
11
10
9
RF2
GND
RF4
2
3
4
PADDLE
8
7
5
6
7
8
9
10
11
4
5
6
V3
V4
12
PADDLE
*View from the top of the package
QFN 12 Lead 3*3 Package Outline:
♦
NiPdAu finish for Military and High reliability applications
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850-5790
Fax: +1 (408) 850-5766
Email:
sales@filcsi.com
Website: www.filtronic.com
Preliminary Data Sheet
2.1
FMS2016QFN-1
Evaluation Board:
BOM
Label
C6
C1
C5
C7
C2
C10, C11, C12,
C13
C1,C2,
C3,C4,C5
C6, C7, C8, C9
Component
Capacitor, 470pF, 0603
Capacitor, 100pF, 0402
Capacitor, 47pF, 0402
C3
C10
C8 C9
C4
Preferred evaluation board material is 0.25 mm thick
BOARD
ROGERS RT4350. All RF tracks should be 50 ohm
characteristic impedance.
C11 C12 C13
Evaluation Board De-Embedding Data (Measured):
0
-0.1
-0.2
-0.3
-0.4
dB
FMS2016QFN CALIBRATION BOARD INSERTION LOSS
-15
FMS2016QFN CALIBRATION BOARD RETURN LOSS
-20
-25
dB
-30
-35
-40
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0.5
1
1.5
2
2.5
Frequency (GHz)
3
3.5
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 988 1845
Fax: +1 (408) 970 9950
Email:
sales@filcsi.com
Website: www.filtronic.com
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