FMA3058
2-20 GH
Z
B
ROADBAND
MMIC A
MPLIFIER
F
EATURES
:
•
•
•
•
•
•
•
•
15dB Gain
Low Noise Amplifier
Single Supply (Self Biased +5V @ 90mA)
12 dBm P
1dB
Output Power at 20GHz
pHEMT Technology
Bias Control
Input Return Loss < -12 dB
Output Return Loss < -10 dB
Pilot Datasheet v2.5
F
UNCTIONAL
S
CHEMATIC
:
VDD
RF Input
RF Output
G
ENERAL
D
ESCRIPTION
:
The FMA3058 is a high performance 2-20GHz
Gallium Arsenide monolithic travelling wave
amplifier. It is suitable for use in broadband
communication, instrumentation and electronic
warfare applications. The die is fabricated
using the Filtronic 0.25µm process. The Circuit
is DC blocked at both the RF input and the RF
output.
T
YPICAL
A
PPLICATIONS
:
•
•
•
•
Test Instrumentation
Electronic Warfare
Broadband Communication Infrastructure
Fiber Optics
E
LECTRICAL
S
PECIFICATIONS
(S
MALL
-S
IGNAL UNLESS OTHERWISE STATED
):
P
ARAMETER
Small Signal Gain
Gain Flatness
Input Return Loss
Output Return Loss
Output Power at 1dB
compression point
C
ONDITIONS
2-20 GHz
2-20 GHz
2-20 GHz
2-20 GHz
2 GHz, 5V drain bias
10 GHz, 5V drain bias
20 GHz, 5V drain bias
M
IN
–
–
–
–
–
–
–
–
–
–
–
T
YP
15
–
-12
-10
18
18
15
90
3.5
3
6.5
M
AX
–
3
–
–
–
–
–
–
–
–
–
U
NITS
dB
dB
dB
dB
dBm
dBm
dBm
mA
dB
dB
dB
Drain Current
Noise Figure
5V drain bias
2 GHz, 5V drain bias
10 GHz, 5V drain bias
20 GHz, 5V drain bias
Note: T
AMBIENT
= +25°C, Z
0
= 50Ω Pads B and C open circuit
D
IFFERENT
B
IAS
C
ONFIGURATIONS
:
The device has a default current, set by an on chip resistor. Pads B and C can be bonded to
ground to increase the device current by reducing the default resistance.
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email:
sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FMA3058
Pilot Datasheet v2.5
A
BSOLUTE
M
AXIMUM
R
ATINGS
:
P
ARAMETER
Max Input Power
Drain Voltage
Total Power
Dissipation
Thermal Resistivity
Operating Temp
Storage Temp
S
YMBOL
Pin
VDD
A
BSOLUTE
M
AXIMUM
+20dBm
+12V
P
AD
R
EF
A
B
C
P
AD
N
AME
IN
R2
R1
OUT
GND
VD
VG
D
ESCRIPTION
RF Input
Internal Source Bias Resistor
Internal Source Bias Resistor
RF Output
Ground
Drain voltage
Optional Gate Voltage
Ptot
θJC
Toper
Tstor
TBD
D
E
F
G
TBD
-55°C to +85°C
-55°C to +150°C
Note: Exceeding any one of these absolute
maximum ratings may cause permanent
damage to the device.
P
AD
L
AYOUT
:
1.500
1.443
1.369
0.050
0.134
0.185
0.269
G F E
2.966
3.066
D
1.141
1.041
0.506
0.422
0.385
0.301
0.530
0.430
0 REF
A
C
B
Dimensions in mm.
0 REF
0.054
0.154
2.914
2.988
2
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email:
sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
3.120
FMA3058
Pilot Datasheet v2.5
T
YPICAL
P
ERFORMANCE
O
N
-W
AFER
:
Note: Measurement Conditions I
D
= 90 mA, V
DD
= 5 V, T
AMBIENT
= 25°C, Pads B and C open circuit.
Gain
20.00
18.00
16.00
14.00
12.00
10.00
8.00
6.00
4.00
2.00
0.00
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
0.00
-10.00
-20.00
S12 (dB)
-30.00
-40.00
-50.00
-60.00
-70.00
2
4
6
Reverse Isolation
S21 (dB)
8
10
12
14
16
18
20
Frequency (GHz)
Input return Loss
0.00
-5.00
-10.00
S11 (dB)
S22 (dB)
0.00
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
Output return Loss
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Noise Figure
8
7
Noise Figure (dB)
6
5
4
3
2
1
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
P1dB
20
18
16
14
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
3
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email:
sales@filcs.com
P1dB (dBm)
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FMA3058
Pilot Datasheet v2.5
T
YPICAL
P
ERFORMANCE
O
N
-W
AFER OVER
T
EMPERATURE
:
Note: Measurement Conditions I
D
= 90 mA, V
DD
= 5 V, Pads B and C open circuit.
T
AMBIENT
= 25°C
T
COLD
= -55°C
T
HOT
= +85°C
Gain
20.00
18.00
16.00
14.00
12.00
10.00
8.00
6.00
4.00
2.00
0.00
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
0.00
-10.00
-20.00
S12 (dB)
-30.00
-40.00
-50.00
-60.00
-70.00
2
4
6
Reverse Isolation
S21 (dB)
8
10
12
14
16
18
20
Frequency (GHz)
Input Return Loss
0.00
-5.00
-10.00
S11 (dB)
S22 (dB)
5.00
0.00
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
Output Return Loss
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
P1dB
20
18
16
14
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
P1dB (dBm)
4
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email:
sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FMA3058
Pilot Datasheet v2.5
B
IASING
C
IRCUIT
S
CHEMATIC
:
VDD
100pF
100nF
RF Output
RF Input
A
SSEMBLY
D
IAGRAM
:
It is recommended that the RF connections be made using bond wires with 25µm diameter and a
maximum length of 300µm. Ground connections should be made according to the required bias
conditions.
To Evaluation Board via an 0402
Surface Mounted capacitor (100nF)
100pF Chip Capacitor
Ground connection
User application
50 Ohms line
50 Ohms line
User application
B
ILL OF
M
ATERIALS
:
C
OMPONENT
All RF tracks should be 50Ω characteristic material
Capacitor, 100pF, chip capacitor
Capacitor, 100nF, 0402
5
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email:
sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
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