R e v i s e d
Date
Classi-
fication
Ind.
Content
R e c o r d s
Applied
date
Issued
date
Drawn
Checked
Checked Approved
Oct.-30 -’03
Enactment
Revised VCE(sat), VF
value(P4/13), VF carve(P11/
13) and Warnings(P12/13, 13/
13)
S.Miyashita K.Yamada
Y.Seki
Jan.-16 -’04
Revision
a
Issued
date
S.Ogawa
S.Miyashita K.Yamada
T.Hosen
MS5F 5616
2
a
13
H04-004-06b
3.Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified
）
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Icp
-Ic
-Ic pulse
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation
voltage
between terminal and copper base *
1
Pc
Tj
Tstg
Viso
Mounting *
2
Terminals *
2
AC : 1min.
1 device
Conditions
Maximum
Ratings
600
±20
200
400
200
400
660
150
-40½ +125
2500
3.5
3.5
Units
V
V
Collector current
Continuous
1mS
A
W
℃
VAC
N・m
Screw Torque
(*
1
) All terminals should be connected together when isolation test will be done.
(*
2
) Recommendable Value : Mounting 2.5~3.5 Nm (M5)
Terminals 2.5~3.5 Nm (M5)
4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified)
Items
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Turn-on time
Symbols
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
½½½
R lead
Conditions
VGE = 0V
VCE = 600V
VCE = 0V
VGE=±20V
VCE = 20V
Ic = 200mA
VGE=15V
Ic = 200A
Tj= 25℃
Tj=125℃
Tj= 25℃
Tj=125℃
Characteristics
min.
typ.
max.
-
-
6.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6.7
2.15
2.4
1.85
2.1
14.0
0.40
0.22
0.16
0.48
0.07
a
a
a
Units
mA
nA
V
1.0
200
7.7
2.45
-
-
-
-
1.20
0.60
-
1.20
0.45
a
V
VCE=10V,VGE=0V,f=1MHz
Vcc = 300V
Ic = 200A
VGE=±15V
Rg = 16
Ω
Tj= 25℃
Tj=125℃
Tj= 25℃
Tj=125℃
nF
µs
Turn-off time
VGE=0V
IF = 200A
IF = 200A
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip *
(*)
1.90
a
1.95
a
1.60
a
1.65
-
1.39
2.30
-
-
-
0.35
-
V
µs
mΩ
Biggest internal terminal resistance among arm.
MS5F 5616
4
a
13
H04-004-03a
5. Thermal resistance characteristics
Items
Thermal resistance(1device)
Contact Thermal resistance
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound (※)
Characteristics
min.
typ.
max.
-
-
-
-
-
0.05
0.19
0.32
-
Units
℃/W
※
This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module
Logo of production
2MBI200U2A-060
200A 600V
Lot.No.
7.Applicable category
Place of manufacturing (code)
This specification is applied to IGBT Module named 2MBI200U2A-060 .
8.Storage and transportation notes
・
The module should be stored at a standard temperature of 5 to 35℃ and humidity of 45 to 75% .
・
Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
・
Avoid exposure to corrosive gases and dust.
・
Avoid excessive external force on the module.
・
Store modules with unprocessed terminals.
・
Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
½
½
90%
0V
L
0V
V
GE
t
rr
I
rr
90%
½
½
V
CE
Vcc
Ic
90%
R
G
V
GE
V
CE
Ic
0V
0A
t
r(i)
t
r
t
on
t
off
½
½
Ic
10%
10%
V
CE
t
f
10%
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
MS5F 5616
5
a
13
H04-004-03a
嵌入式系统
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