3. Absolute Maximum Ratings ( at Tc= 25
o
C unless otherwise specified )
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Collector current
Icp
-Ic
-Ic pulse
Pc
Tj
Tstg
Continuous
1ms
1ms
1 device
Tc=25
o
C
Tc=80
o
C
Tc=25
o
C
Tc=80
o
C
Conditions
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation
between terminal and copper base (*1)
Viso
AC : 1min.
voltage
Screw
Mounting (*2)
-
Terminals (*3)
Torque
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6)
(*3) Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
Maximum
Units
Ratings
1200
V
±20
V
400
300
800
A
600
300
600
1470
W
+150
o
C
-40 to +125
2500
3.5
4.5
VAC
Nm
4. Electrical characteristics ( at Tj= 25
o
C unless otherwise specified )
Items
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Turn-on time
Turn-off time
Symbols
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
Conditions
VCE=1200V
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
Ic=300mA
Ic=300A
VGE=15V
min.
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Characteristics
typ.
max.
-
-
6.5
2.10
2.30
1.90
2.10
34
0.32
0.10
0.03
0.41
0.07
1.85
1.95
1.65
1.75
-
0.52
2.0
400
8.5
2.25
-
2.05
-
-
1.20
0.60
-
1.00
0.30
2.00
-
1.80
-
0.35
-
Units
mA
nA
V
Tj=25
o
C
Tj=125
o
C
Tj=25
o
C
Tj=125
o
C
VCE=10V,VGE=0V,f=1MHz
Vcc=600V
Ic=300A
VGE=±15V
RG=1.1Ω
IF=300A
VGE=0V
Tj=25
o
C
Tj=125
o
C
Tj=25
o
C
Tj=125
o
C
V
nF
us
Forward on voltage
V
us
mΩ
Reverse recovery time
IF=300A
Lead resistance,
R lead
terminal-chip (*4)
(*4) Biggest internal terminal resistance among arm.
MS5F6034
4
13
H04-004-03a
5. Thermal resistance characteristics
Items
Thermal resistance(1device)
Symbols
Rth(j-c)
IGBT
FWD
Conditions
min.
-
-
Characteristics
typ.
max.
-
0.085
-
0.14
Units
o
Contact Thermal resistance
Rth(c-f)
with Thermal Compound
-
0.025
-
(1 device) (*5)
(*5) This is the value which is defined mounting on the additional cooling fin with thermal compound.
C/W
6. Indication on module
Logo of production
2MBI300U4D-120
300A 1200V
Lot.No.
7. Applicable category
Place of manufacturing (code)
This specification is applied to IGBT-Module named 2MBI300U4D-120.
8. Storage and transportation notes
•
The module should be stored at a standard temperature of 5 to 35
o
C and humidity of 45 to 75% .
•
Store modules in a place with few temperature changes in order to avoid condensation on the
module surface.
•
Avoid exposure to corrosive gases and dust.
•
Avoid excessive external force on the module.
•
Store modules with unprocessed terminals.
•
Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
½
½
90%
0V
L
0V
V
GE
t
r r
I
r r
90%
½
½
V
CE
V cc
Ic
90%
R
G
V
GE
V
CE
Ic
0V
0A
t
r ( i )
t
r
t
o n
t
o f f
½
½
Ic
10%
10%
V
CE
t
f
10%
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
MS5F6034
5
13
H04-004-03a
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
