3. Absolute Maximum Ratings ( at Tc= 25
℃
unless otherwise specified
）
Items
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbols
VCES
VGES
Ic
Ic pulse
IF
IF pulse
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage
(*1)
Screw Torque
Pc
Tj
Tstg
Viso
Mounting
(*2)
Terminals
(*2)
Conditions
Ic=1mA
Duty=100 %
1ms
Duty=56 %
1ms
1 device
Maximum
Ratings
600
±20
400
800
400
800
1270
150
-40~ +125
Units
V
V
A
W
℃
℃
V
Nm
AC : 1min.
2500
3.5
3.5
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5~3.5 N m (M5)
Terminal 2.5~3.5Nm (M5)
4. Electrical characteristics ( at Tj= 25
℃
unless otherwise specified)
Characteristics
Items
Zero gate voltage
Collector current
Gate-Emitter leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Allowabe avalanche energy
during short circuit cutting off
(Non-repetitive)
5. Thermal resistance characteristics
Characteristics
Items
Thermal resistance
(1 device)
Contact Thermal resistance
Symbols
R
th(j-c)
R
th(c-f)
IGBT
FWD
With thermal compound
※
Symbols
I
CES
I
GES
V
GE
=
V
CE
=
Conditions
0 V,
0 V,
20 V,
15 V
400 A
0V
10 V
1 MHz
300 V
400 A
±15 V
6.8
400 A
400 A
Ic > 800A, Tj = 125
℃
Chip
Terminal
V
CE
=
V
GE
=
Ic =
600 V
±20 V
400 mA
Chip
Terminal
min.
-
-
6.2
-
-
-
-
-
-
-
-
-
-
-
-
-
200
c
c
typ.
-
-
6.7
1.9
2.2
30000
5200
4500
c
c
Max.
2.0
400
7.7
-
2.5
-
-
-
1.2
0.6
-
1.2
0.45
-
2.5
0.3
-
Units
mA
n
A
V
V
V
GE(th)
V
CE
=
VCE(sat)
V
GE
=
Ic =
Cies
Coes
Cres
ton
tr
tr
(i)
toff
tf
V
F
trr
P
AV
I
F
=
IF =
VGE =
V
CE
=
f=
Vcc =
Ic =
V
GE
=
R
G
=
pF
0.4
0.2
0.55
0.05
0.1
μ
s
1.75
1.9
-
-
V
μ
s
mJ
Conditions
min.
-
-
-
typ.
-
-
0.025
Max.
Units
0.098
0.19
℃
/
Ｗ
-
* This is the value which is defined mounting on the additional cooling fin
with thermal compound.
MS5F 5293
4
14
a
b
c
H04-004-03
6. Indication on module
2MBI400TB-060
400A 600V
Lot No.
Place of manufucturing
7. Applicable category
This specification is applied to IGBT Module named 2MBI400TB-060
8. Storage and transportation notes
・
The module should be stored at a standard temperature of 5 to 35
Ｃ
and
humidity of 45 to 75% .
・
Store modules in a place with few temperature changes in order to avoid
condensation on the module surface.
・
Avoid exposure to corrosive gases and dust.
・
Avoid excessive external force on the module.
・
Store modules with unprocessed terminals.
・
Do not drop or otherwise shock the modules when tranporting.
9. Definitions of switching time
½
½
90%
0V
L
0V
V
GE
t
rr
I
rr
90%
½
½
V
CE
Vcc
Ic
90%
R
G
V
GE
V
CE
Ic
0V
0A
t
r(i)
t
r
t
on
t
off
½
½
Ic
10%
10%
V
CE
t
f
10%
MS5F 5293
5
14
a
b
c
H04-004-03
模拟与混合信号
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