3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified
)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Sym bols
VCES
VGES
Ic
Collector current
Icp
-Ic
-Ic pulse
Pc
Tj
Tstg
Viso
-
AC : 1min.
Continuous
1ms
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Conditions
Maximum
Ratings
1700
±20
200
150
400
300
150
300
780
150
-40 ~ +125
3400
3.5
4.5
Units
V
V
A
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation
between terminal and copper base (*1)
voltage
Screw
Torque
Mounting (*2)
Terminals (*3)
1ms
1 device
W
°C
VAC
Nm
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5 or M6)
(*3) Recommendable Value : Terminals 3.5~4.5 Nm (M6)
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Turn-on time
Symbols
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
Conditions
VGE = 0V
VCE = 1700V
VCE = 0V
VGE=±20V
VCE = 20V
Ic = 150mA
Tj= 25°C
VGE=15V
Tj=125°C
Tj= 25°C
Ic = 150A
Tj=125°C
VCE=10V,VGE=0V,f=1MHz
Vcc = 900V
Ic = 150A
VGE=±15V
Rg = 3.3 Ω
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Characteristics
min.
typ.
max.
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
a
a
Units
mA
nA
V
-
-
6.5
2.40
2.80
2.25
2.65
14
0.62
0.39
0.05
0.55
0.09
1.90
2.10
1.80
2.00
-
0.53
a
2.0
400
8.5
2.55
-
2.40
-
-
1.20
0.60
-
1.50
0.30
2.25
-
2.15
-
0.6
-
V
nF
μs
Turn-off time
VGE=0V
IF = 150A
IF = 150A
Forward on voltage
V
Reverse recovery time
Lead resistance,
terminal-chip(*4)
μs
mΩ
(*4) Biggest internal terminal resistance among arm.
a
b
MS5F6144
4
13
H04-004-03a
5. Thermal resistance characteristics
Items
Thermal resistance(1device)
Contact Thermal resistance
(1device) (*5)
Symbols
Rth(j-c)
Rth(c-f)
IGBT
FWD
Conditions
Characteristics
min.
typ.
max.
-
-
-
-
-
0.025
0.17
0.28
-
Units
°C/W
with Thermal Compound
(*5) This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module
Logo of production
2MBI150U4H-170
150A 1700V
Lot.No.
Place of manufacturing (code)
7.Applicable category
This specification is applied to IGBT Module named 2MBI150U4H-170 .
8.Storage and transportation notes
・
The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% .
・
Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
・
Avoid exposure to corrosive gases and dust.
・
Avoid excessive external force on the module.
・
Store modules with unprocessed terminals.
・
Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
½
½
90%
0V
L
0V
V
GE
t
r r
I
r r
90%
½
½
V
CE
V cc
Ic
90%
R
G
V
GE
V
CE
Ic
0V
0A
t
r ( i )
t
r
t
o n
t
o f f
½
½
Ic
10%
10%
V
CE
t
f
10%
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
a
b
MS5F6144
5
13
H04-004-03a