BC846...BC850
NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856, BC857, BC858
BC859, BC860 (PNP)
3
2
1
VPS05161
Type
BC846A
BC846B
BC847A
BC847B
BC847C
BC848A
BC848B
BC848C
BC849B
BC849C
BC850B
BC850C
Marking
1As
1Bs
1Es
1Fs
1Gs
1Js
1Ks
1Ls
2Bs
2Cs
2Fs
2Gs
1=B
B=1
B=1
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
1
Nov-20-2002
BC846...BC850
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Peak base current
Peak emitter current
Total power dissipation,
T
S
= 71 °C
Junction temperature
Storage temperature
Thermal Resistance
Symbol
V
CEO
V
CBO
V
CES
V
EBO
I
C
I
CM
I
BM
I
EM
P
tot
T
j
T
stg
R
thJS
BC846
65
80
80
6
BC847
BC850
45
50
50
6
100
200
200
200
330
150
-65 ... 150
BC848
BC849
30
30
30
5
Unit
V
mA
mA
mW
°C
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
BC846
BC847/850
BC848/849
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
BC846
BC847/850
BC848/849
V
(BR)CBO
80
50
30
-
-
-
-
-
-
V
(BR)CEO
65
45
30
-
-
-
-
-
-
typ.
max.
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
Junction - soldering point
1)
240
K/W
Unit
V
Nov-20-2002
BC846...BC850
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 µA,
V
BE
= 0
BC846
BC847/850
BC848/849
Emitter-base breakdown voltage
I
E
= 1 µA,
I
C
= 0
Collector cutoff current
V
CB
= 40 V,
I
E
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
DC current gain 1)
I
C
= 10 µA,
V
CE
= 5 V
h
FE
-group
A
h
FE
-group
B
h
FE
-group
C
DC current gain 1)
I
C
= 2 mA,
V
CE
= 5 V
h
FE
-group
A
h
FE
-group
B
h
FE
-group
C
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter voltage 1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
V
BE(ON)
580
-
660
-
700
770
V
BEsat
-
-
700
900
-
-
V
CEsat
-
-
90
200
250
600
h
FE
110
200
420
180
290
520
220
450
800
h
FE
-
-
-
140
250
480
-
-
-
I
CBO
-
-
5
BC846/847
BC848-850
I
CBO
V
(BR)EBO
6
5
-
-
-
-
-
-
15
V
(BR)CES
80
50
30
-
-
-
-
-
-
typ.
max.
Unit
V
nA
µA
-
mV
1) Pulse test: t
≤=
300
µ
s, D = 2%
3
Nov-20-2002
BC846...BC850
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Short-circuit input impedance
C
eb
h
11e
C
cb
f
T
Unit
max.
-
-
-
k
typ.
250
3
8
-
-
-
MHz
pF
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
-
-
-
h
12e
2.7
4.5
8.7
1.5
2
3
200
330
600
18
30
60
1.2
-
-
-
Open-circuit reverse voltage transf.ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
10
-4
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
-
-
-
h
21e
-
-
-
-
-
-
-
S
-
-
-
4
dB
Short-circuit forward current transf.ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
-
-
-
h
22e
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-gr.A
h
FE
-gr.B
h
FE
-gr.C
-
-
-
F
Noise figure
I
C
= 200 µA,
V
CE
= 5 V,
R
S
= 2
k
,
Equivalent noise voltage
I
C
= 200 µA,
V
CE
= 5 V,
R
S
= 2
k
,
-
BC849
BC850
V
n
f
= 10 ... 50 Hz
f
= 1 kHz,
f
= 200
Hz
-
-
0.135
BC850
4
Nov-20-2002
Open-circuit output admittance
µV
BC846...BC850
Total power dissipation
P
tot
=
f(T
S
)
Collector-base capacitance
C
CB
=
f
(V
CBO
)
Emitter-base capacitance
C
EB
=
f
(V
EBO
)
BC 846...850
EHP00361
360
mW
300
270
C
CB0
(
C
EB0
)
12
pF
10
P
tot
240
210
180
150
120
90
60
30
0
0
15
30
45
60
75
90 105 120
8
C
EB
6
4
C
CB
2
°C
150
T
S
0
10
-1
5
10
0
V
V
CB0
10
1
(
V
EB0
)
Permissible pulse load
P
totmax
/
P
totDC
=
f
(t
p
)
10
3
P
tot max
P
tot DC
t
p
D
=
T
t
p
T
EHP00362
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 5V
10
3
MHz
EHP00363
f
T
5
10
2
5
10
1
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
2
5
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
10
1
10
-1
5 10
0
5
10
1
mA
10
2
Ι
C
5
Nov-20-2002
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