polyfet rf devices
SH703
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F
t
transistors with high
input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
130.0 Watts Push - Pull
Package Style AH
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
270 Watts
Junction to
Case Thermal
Resistance
o
0.65 C/W
Maximum
Junction
Temperature
o
200 C
Storage
Temperature
o
o
-65 C to 150 C
DC Drain
Current
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
16.0 A
RF CHARACTERISTICS ( 130.0 WATTS OUTPUT )
SYMBOL
Gps
PARAMETER
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
MIN
10
55
20:1
TYP
MAX
UNITS
dB
%
TEST CONDITIONS
Idq = 1.20 A, Vds =
28.0
V, F =
Idq = 1.20 A, Vds =
28.0
V, F =
400
MHz
400
MHz
η
VSWR
Relative Idq = 1.20 A, Vds =
28.0
V, F =
400
MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
PARAMETER
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
1
3.6
0.35
21.00
150.0
9.0
96.0
MIN
65
3.0
1
7
TYP
MAX
UNITS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
TEST CONDITIONS
Ids = 60.00 mA, Vgs = 0V
Vds = 28.0 V, Vgs = 0V
Vds = 0V Vgs = 30V
Ids = 0.30 A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 7.50 A
Vgs = 20V, Vds = 10V
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 07/04/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
SH703
POUT VS PIN GRAPH
SH703 POUT VS PIN Freq=400MHz,
VDS=28V, Idq=.6A
12.50
160
140
120
100
80
60
40
20
0
0
5
10
15
20
25
PIN IN WATTS
12.00
1000
CAPACITANCE VS VOLTAGE
S1A 3 DICE CAPACITANCE
Pout
11.50
11.00
10.50
10.00
100
Ciss
Coss
10
Gain
Efficiency = 50%
9.50
9.00
8.50
8.00
Crss
1
0
5
10
15
20
25
30
VDS IN VOLTS
IV CURVE
S1A 3 DIE IV
25
ID & GM VS VGS
100.00
S1A 3 DIE ID & GM Vs VG
20
Id in amps; Gm in mhos
10.00
Id
ID IN AMPS
15
10
gM
1.00
5
0
0
2
vg=2v
4
6
Vg=4v
8
10
12
VDS
Vg=6v
INVOLTS
vg=8v
14
0
16
18
vg=12v
20
0.10
0
2
4
6
8
Vgs in Volts
10
12
14
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 07/04/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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