72 Mb (2M x 36 & 4M x 18) ddr-II (burst of 2) cio synchronous srams
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) |
| 零件包装代码 | BGA |
| 包装说明 | LBGA, BGA165,11X15,40 |
| 针数 | 165 |
| Reach Compliance Code | compliant |
| ECCN代码 | 3A991.B.2.A |
| 最长访问时间 | 0.35 ns |
| 其他特性 | PIPELINED ARCHITECTURE |
| 最大时钟频率 (fCLK) | 300 MHz |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PBGA-B165 |
| JESD-609代码 | e1 |
| 长度 | 17 mm |
| 内存密度 | 75497472 bit |
| 内存集成电路类型 | DDR SRAM |
| 内存宽度 | 36 |
| 湿度敏感等级 | 3 |
| 功能数量 | 1 |
| 端子数量 | 165 |
| 字数 | 2097152 words |
| 字数代码 | 2000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 2MX36 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | LBGA |
| 封装等效代码 | BGA165,11X15,40 |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY, LOW PROFILE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 1.5/1.8,1.8 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.4 mm |
| 最小待机电流 | 1.7 V |
| 最大压摆率 | 0.6 mA |
| 最大供电电压 (Vsup) | 1.89 V |
| 最小供电电压 (Vsup) | 1.71 V |
| 标称供电电压 (Vsup) | 1.8 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子形式 | BALL |
| 端子节距 | 1 mm |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 10 |
| 宽度 | 15 mm |
| Base Number Matches | 1 |
| IS61DDB22M36-300M3L | IS61DDB22M36-300M3LI | IS61DDB22M36-300M3 | IS61DDB22M36-250M3L | IS61DDB22M36-250M3 | IS61DDB22M36 | |
|---|---|---|---|---|---|---|
| 描述 | 72 Mb (2M x 36 & 4M x 18) ddr-II (burst of 2) cio synchronous srams | 72 Mb (2M x 36 & 4M x 18) ddr-II (burst of 2) cio synchronous srams | 72 Mb (2M x 36 & 4M x 18) ddr-II (burst of 2) cio synchronous srams | 72 Mb (2M x 36 & 4M x 18) ddr-II (burst of 2) cio synchronous srams | 72 Mb (2M x 36 & 4M x 18) ddr-II (burst of 2) cio synchronous srams | 72 Mb (2M x 36 & 4M x 18) ddr-II (burst of 2) cio synchronous srams |
| 是否无铅 | 不含铅 | 不含铅 | 含铅 | 不含铅 | 含铅 | - |
| 是否Rohs认证 | 符合 | 符合 | 不符合 | 符合 | 不符合 | - |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | - | - |
| 零件包装代码 | BGA | BGA | BGA | BGA | BGA | - |
| 包装说明 | LBGA, BGA165,11X15,40 | LBGA, BGA165,11X15,40 | 15 X 17 MM, 1 MM PITCH, FBGA-165 | LBGA, BGA165,11X15,40 | 15 X 17 MM, 1 MM PITCH, FBGA-165 | - |
| 针数 | 165 | 165 | 165 | 165 | 165 | - |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | - |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | - |
| 最长访问时间 | 0.35 ns | 0.35 ns | 0.35 ns | 0.35 ns | 0.35 ns | - |
| 其他特性 | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | - |
| 最大时钟频率 (fCLK) | 300 MHz | 300 MHz | 300 MHz | 250 MHz | 250 MHz | - |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | - |
| JESD-30 代码 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | - |
| JESD-609代码 | e1 | e1 | e0 | e1 | e0 | - |
| 长度 | 17 mm | 17 mm | 17 mm | 17 mm | 17 mm | - |
| 内存密度 | 75497472 bit | 75497472 bit | 75497472 bit | 75497472 bit | 75497472 bit | - |
| 内存集成电路类型 | DDR SRAM | DDR SRAM | DDR SRAM | DDR SRAM | DDR SRAM | - |
| 内存宽度 | 36 | 36 | 36 | 36 | 36 | - |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | - |
| 端子数量 | 165 | 165 | 165 | 165 | 165 | - |
| 字数 | 2097152 words | 2097152 words | 2097152 words | 2097152 words | 2097152 words | - |
| 字数代码 | 2000000 | 2000000 | 2000000 | 2000000 | 2000000 | - |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | - |
| 最高工作温度 | 70 °C | 85 °C | 70 °C | 70 °C | 70 °C | - |
| 组织 | 2MX36 | 2MX36 | 2MX36 | 2MX36 | 2MX36 | - |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | - |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| 封装代码 | LBGA | LBGA | LBGA | LBGA | LBGA | - |
| 封装等效代码 | BGA165,11X15,40 | BGA165,11X15,40 | BGA165,11X15,40 | BGA165,11X15,40 | BGA165,11X15,40 | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
| 封装形式 | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | - |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | - |
| 峰值回流温度（摄氏度） | 260 | 260 | NOT SPECIFIED | 260 | NOT SPECIFIED | - |
| 电源 | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | - |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
| 座面最大高度 | 1.4 mm | 1.4 mm | 1.4 mm | 1.4 mm | 1.4 mm | - |
| 最小待机电流 | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | - |
| 最大压摆率 | 0.6 mA | 0.6 mA | 0.6 mA | 0.55 mA | 0.55 mA | - |
| 最大供电电压 (Vsup) | 1.89 V | 1.89 V | 1.89 V | 1.89 V | 1.89 V | - |
| 最小供电电压 (Vsup) | 1.71 V | 1.71 V | 1.71 V | 1.71 V | 1.71 V | - |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | - |
| 表面贴装 | YES | YES | YES | YES | YES | - |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | - |
| 温度等级 | COMMERCIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | - |
| 端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | TIN SILVER COPPER | Tin/Lead (Sn/Pb) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Lead (Sn/Pb) | - |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | - |
| 端子节距 | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | - |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | - |
| 处于峰值回流温度下的最长时间 | 10 | 40 | NOT SPECIFIED | 10 | NOT SPECIFIED | - |
| 宽度 | 15 mm | 15 mm | 15 mm | 15 mm | 15 mm | - |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
