TZMB...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
D
Very sharp reverse characteristic
Low reverse current level
Available with tighter tolerances
Very high stability
Low noise
V
Z
–tolerance
±
2%
94 9371
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
300K/W
x
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Document Number 85610
Rev. 3, 01-Apr-99
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TZMB...
Vishay Telefunken
Type
TZMB...
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
V
Znom
V
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
for V
ZT
and
V
2.35 to 2.45
2.64 to 2.76
2.94 to 3.06
3.24 to 3.36
3.52 to 3.68
3.82 to 3.98
4.22 to 4.38
4.60 to 4.80
5.00 to 5.20
5.48 to 5.72
6.08 to 6.32
6.66 to 6.94
7.35 to 7.65
8.04 to 8.36
8.92 to 9.28
9.80 to 10.20
10.78 to 11.22
11.76 to 12.24
12.74 to 13.26
14.70 to 15.30
15.70 to 16.30
17.64 to 18.36
19.60 to 20.40
21.55 to 22.45
23.5 to 24.5
26.4 to 27.6
29.4 to 30.6
32.4 to 33.6
35.3 to 36.7
38.2 to 39.8
42.1 to 43.9
46.1 to 47.9
50.0 to 52.0
54.9 to 57.1
60.8 to 63.2
66.6 to 69.4
73.5 to 76.5
r
zjT
r
zjk
at
I
ZK
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
I
R
and
m
A
< 100
< 10
<4
<2
<2
<2
<1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
I
R
at
m
A
2)
< 50
< 50
< 40
< 40
< 40
< 40
< 20
< 10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
< 10
< 10
< 10
< 10
< 10
V
R
V
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
TK
VZ
%/K
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0.05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0,12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
W
W
< 85
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
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Document Number 85610
Rev. 3, 01-Apr-99
TZMB...
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
600
P
tot
– Total Power Dissipation ( mW )
500
400
300
200
100
0
0
95 9602
1.3
V
Ztn
– Relative Voltage Change
V
Ztn
=V
Zt
/V
Z
(25°C)
1.2
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
1.1
4
2
1.0
0.9
0.8
–60
0
–2 10
–4
/K
–4
10
–4
/K
40
80
120
160
200
95 9599
0
60
120
180
240
T
amb
– Ambient Temperature (
°C
)
T
j
– Junction Temperature (
°C
)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
1000
– Voltage Change ( mV )
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
15
T
j
= 25°C
100
10
5
I
Z
=5mA
0
I
Z
=5mA
10
D
V
Z
1
0
95 9598
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
5
10
15
20
25
V
Z
– Z-Voltage ( V )
95 9600
Figure 2. Typical Change of Working Voltage
under Operating Conditions at T
amb
=25
°
C
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
200
C
D
– Diode Capacitance ( pF )
150
V
R
= 2V
100
T
j
= 25°C
50
0
0
95 9601
5
10
15
20
25
V
Z
– Z-Voltage ( V )
Figure 5. Diode Capacitance vs. Z–Voltage
Document Number 85610
Rev. 3, 01-Apr-99
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TZMB...
Vishay Telefunken
100
I
F
– Forward Current ( mA )
50
P
tot
=500mW
T
amb
=25°C
T
j
= 25°C
1
I
Z
– Z-Current ( mA )
1.0
95 9607
10
40
30
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
20
10
0
15
20
25
30
35
95 9605
V
F
– Forward Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 6. Forward Current vs. Forward Voltage
100
r
Z
– Differential Z-Resistance (
W
)
1000
Figure 8. Z–Current vs. Z–Voltage
I
Z
– Z-Current ( mA )
80
P
tot
=500mW
T
amb
=25°C
60
I
Z
=1mA
100
5mA
10 10mA
40
20
0
0
4
8
12
16
20
1
0
95 9606
T
j
= 25°C
5
10
15
20
25
95 9604
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 7. Z–Current vs. Z–Voltage
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
1000
Figure 9. Differential Z–Resistance vs. Z–Voltage
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
t
p
/T=0.05
1
10
–1
t
p
/T=0.02
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
t
p
/T=0.01
R
thJA
=300K/W
D
T=T
jmax
–T
amb
D
T/Z
thp
)
1/2
)/(2r
zj
)
10
0
10
1
t
p
– Pulse Length ( ms )
10
2
95 9603
Figure 10. Thermal Response
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Document Number 85610
Rev. 3, 01-Apr-99
TZMB...
Vishay Telefunken
Dimensions in mm
96 12070
Document Number 85610
Rev. 3, 01-Apr-99
www.vishay.de
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Microchip MCU
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