Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically
sealed metal case. The
4N22A, 4N23A
and
4N24A
can be tested to customer specifications, as well as to MIL-PRF-19500
JAN, JANS, JANTX, and JANTXV quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage.............................................................................................................................................................
Collector-Base Voltage ...............................................................................................................................................................35V
Reverse Input Voltage .................................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ....................................... 40mA
Continuous Collector Current ................................................................................................................................................. 50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................... 300mW
Storage Temperature............................................................................................................................................. -65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................... -55°C to +125°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ..................................................................................240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 5 mW/°C.
Package Dimensions
* JEDEC registered data
Schematic Diagram
0.040 [1.02]
MAX.
0.305 [7.75]
0.335 [8.51]
6 LEADS
5
6
7
2
1
C
3
0.016Ø [0.41]
0.019Ø [0.48]
0.500 [12.70]
MIN.
0.155 [3.94]
0.185 [4.70]
0.022Ø [5.08]
3
0.045 [1.14]
0.029 [0.73]
5
A
E
1
45°
0.034 [0.864]
0.028 [0.711]
TO5
7
K
B
2
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E. Walnut St., Garland, TX 75040
•
(972) 272-3571
•
Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@microropac.com
3 - 10
4N22A, 4N23A, and 4N24A
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
*ELECTRICAL
CHARACTERISTICS INPUT LED
T
A
= 25
°
C Unless otherwise specified
PARAMETER
SYMBOL
MIN MAX UNITS
Input Diode Static Reverse Current
Input Diode Static Forward Voltage
-55 C
+25
°
C
+125
°
C
°
TEST CONDITIONS
V
R
= 2V
I
F
= 10mA
NOTE
I
R
V
F
1
0.8
0.7
100
1.5
1.3
1.2
µA
V
*OUTPUT
TRANSISTOR
T
A
= 25
°
C Unless otherwise specified
PARAMETER
SYMBOL
MIN
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
35
35
4
MAX
UNITS
V
V
V
TEST CONDITIONS
I
C
= 100
µ
A, I
B
= 0, I
F
= 0
I
C
= 1mA, I
B
= 0, I
F
= 0
I
C
= 0, I
E
= 100
µ
A, I
F
= 0
NOTE
*COUPLED
CHARACTERISTICS
PARAMETER
On State Collector Current
T
A
= 25
°
C Unless otherwise specified
SYMBOL
I
C(ON)
MIN
0.15
0.2
0.4
2.5
6
10
1
2.5
4
1
2.5
4
MAX
UNITS
mA
TEST CONDITIONS
V
CE
= 5V, I
B
= 0, I
F
= 2mA
NOTE
4N22A
4N23A
4N24A
4N22A
4N23A
4N24A
4N22A
4N23A
4N24A
4N22A
4N23A
4N24A
+25
°
C
+100 C
4N22A
4N23A
4N24A
°
On State Collector Current
mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
100
100
0.3
0.3
0.3
nA
µ
A
I
C(ON)
On State Collector Current
-55
°
C
On State Collector Current
+100
°
C
Off State Collector Current
Off State Collector Current
I
C(ON)
I
C(ON)
I
C(OFF)
I
C(OFF)
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
R
I-O
C
I-O
V
CE
= 20V, I
B
= 0, I
F
= 0mA
V
CE
= 20V, I
B
= 0, I
F
= 0mA
I
C
= 2.5mA, I
B
= 0, I
F
= 20mA
I
C
= 5mA, I
B
= 0, I
F
= 20mA
I
C
= 10mA, I
B
= 0, I
F
= 20mA
V
IN-OUT
= 1kV
1
1
Collector-Emitter Saturation Voltage
V
V
V
Input to Output Resistance
Input to Output Capacitance
Rise Time
4N22A
4N23A
4N24A
4N22A
4N23A
4N24A
10
11
5
15
15
20
15
15
20
pF
µ
s
µs
µ
s
µ
s
µs
µ
s
F = 1MHz, V
IN-OUT
= 1kV
V
CC
= 10V, I
F
= 10mA, R
L
= 100
Ω
t
r
t
r
t
r
t
f
t
f
t
f
Fall Time
V
CC
=10V, I
F
= 10mA, R
L
= 100
Ω
NOTES:
1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E. Walnut St., Garland, TX 75040
•
(972) 272-3571
•
Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@microropac.com
3 - 11
4N22A, 4N23A, and 4N24A
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
Input Current, Low Level
Input Current, High Level
Supply Voltage
PART NUMBER
JAN4N22A
JAN4N23A
JAN4N24A
JANTX4N22A
JANTX4N23A
JANTX4N24A
JANTXV4N22A
JANTXV4N23A
JANTXV4N24A
* JEDEC registered data
SYMBOL
I
FL
I
FH
V
CE
MIN
0
2
5
MAX
100
10
10
UNITS
µ
A
mA
V
SELECTION GUIDE
PART DESCRIPTION
4N22A Optocoupler, JAN Screening level
4N23A Optocoupler, JAN Screening level
4N24A Optocoupler, JAN Screening level
4N22A Optocoupler, JANTX Screening level
4N23A Optocoupler, JANTX Screening level
4N24A Optocoupler, JANTX Screening level
4N22A Optocoupler, JANTXV Screening level
4N23A Optocoupler, JANTXV Screening level
4N24A Optocoupler, JANTXV Screening level
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
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