Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically
sealed TO-5 metal can. The
4N47, 4N48
and
4N49’s
can be tested to customer specifications, as well as to MIL-PRF-19500
JAN, JANTX, JANTXV and JANS quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage............................................................................................................................................................. 1kV
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ............................40V
Collector-Base Voltage .............................................................................................................................................................45V
Reverse Input Voltage ...............................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ......................................40mA
Continuous Collector Current ................................................................................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ..................................300mW
Storage Temperature........................................................................................................................................... -65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................. -55°C to +125°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ................................................................................ 240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.
*JEDEC registered data
Package Dimensions
6 LEADS
Schematic Diagram
0.016Ø [0.41]
0.019Ø[0.48]
0.040 [1.02]
MAX.
0.305 [7.75]
0.335 [8.51]
0.500 [12.70]
MIN.
0.155 [3.94]
0.185 [4.70]
5
5A
6
7
1
3
2
C
3
0.022Ø [5.08]
0.045 [1.14]
0.029 [0.73]
E 1
7 K
B 2
45°
0.034 [0.864]
0.028 [0.711]
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E.Walnut St., Garland, TX 75040
•
(972) 272-3571
•
Fax (972) 487-6918
www.micropac.com
E-MAIL:
optosales@micropac.com
3 - 14
4N47, 4N48, and 4N49
*ELECTRICAL
CHARACTERISTICS
PARAMETER
Input Diode Static Reverse Current
Input Diode Static Forward Voltage
-55
°
C
+25
°
C
+100
°
C
JAN, JANTX, JANTXV, JANS, SINGLE CHANNEL OPTOCOUPLERS
T
A
= 25
°
C Unless otherwise specified
SYMBOL
I
R
V
F
MIN
1.0
0.8
0.7
TYP
MAX
100
1.7
1.5
1.3
UNITS
µA
V
TEST CONDITIONS
V
R
= 2V
I
E
= 10mA
NOTE
1.4
*OUTPUT
TRANSISTOR
T
A
= 25
°
C Unless otherwise specified
PARAMETER
SYMBOL MIN
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
45
40
7
TYP
MAX
UNITS
V
V
V
TEST CONDITIONS
I
C
= 100
µ
A, I
B
= 0, I
F
= 0
I
C
= 1mA, I
B
= 0, I
F
= 0
I
C
= 0, I
E
= 100
µ
A, I
F
= 0
NOTE
*COUPLED
CHARACTERISTICS
PARAMETER
On State Collector Current
T
A
= 25
°
C Unless otherwise specified
SYMBOL
4N47
4N48
4N49
4N47
4N48
4N49
4N47
4N48
4N49
I
C(ON)
MIN
0.5
1.0
2.0
0.7
1.4
2.8
0.5
1.0
2.0
TYP
MAX
5
10
UNITS
mA
TEST CONDITIONS
V
CE
= 5V, I
B
= 0, I
F
= 1mA
NOTE
On State Collector Current
-55
°
C
On State Collector Current
+100
°
C
Off State Collector Current
Off State Collector Current
+25
°
C
+100°C
mA
V
CE
= 5V, I
B
= 0, I
F
= 2mA
mA
V
CE
= 5V, I
B
= 0, I
F
= 2mA
100
100
0.3
0.3
0.3
nA
µ
A
I
C(ON)
I
C(ON)
I
C(OFF)
I
C(OFF)
2
V
CE
= 20V, I
B
= 0, I
F
= 0mA
V
CE
= 20V, I
B
= 0, I
F
= 0mA
I
C
= 0.5mA, I
B
= 0, I
F
= 2mA
I
C
= 1mA, I
B
= 0, I
F
= 2mA
I
C
= 2mA, I
B
= 0, I
F
= 2mA
V
IN-OUT
= 1kV
1
1
Collector-Emitter Saturation Voltage
4N47
4N48
4N49
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
R
I-O
C
I-O
10
11
V
V
V
Input to Output Resistance
Input to Output Capacitance
Rise Time/ Fall Time
Phototransistor Operation
Rise Time/ Fall Time
Photodiode Operation
4N47
4N48
4N49
4N47
4N48
4N49
5
20
25
25
0.85
0.85
0.85
pF
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
f = 1MHz, V
IN-OUT
= 1kV
V
CC
= 10V, I
F
= 10mA, R
L
= 100
Ω
t
r
/ t
f
t
r
/ t
f
t
r
/ t
f
t
r
/ t
f
t
r
/ t
f
t
r
/ t
f
V
CC
= 10V, I
F
= 10mA, R
L
= 100
Ω
NOTES:
1.
These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
2.
This parameter measured using pulse techniques t
w
=100
µ
s, duty cycle
<
1%.
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E.Walnut St., Garland, TX 75040
•
(972) 272-3571
•
Fax (972) 487-6918
www.micropac.com
E-MAIL:
optosales@micropac.com
3 - 15
4N47, 4N48, and 4N49
JAN, JANTX, JANTXV, JANS, SINGLE CHANNEL OPTOCOUPLERS
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
Input Current, Low Level
Input Current, High Level
Supply Voltage
PART NUMBER
JAN4N47
JAN4N48
JAN4N49
JANTX4N47
JANTX4N48
JANTX4N49
JANTXV4N47
JANTXV4N48
JANTXV4N49
JANS4N47
JANS4N48
JANS4N49
*JEDEC registered data
SYMBOL
I
FL
I
FH
V
CE
MIN
0
2
5
MAX
100
10
10
UNITS
µ
A
mA
V
SELECTION GUIDE
PART DESCRIPTION
4N47 Optocoupler, JAN Screening level
4N48 Optocoupler, JAN Screening level
4N49 Optocoupler, JAN Screening level
4N47 Optocoupler, JANTX Screening level
4N48 Optocoupler, JANTX Screening level
4N49 Optocoupler, JANTX Screening level
4N47 Optocoupler, JANTXV Screening level
4N48 Optocoupler, JANTXV Screening level
4N49 Optocoupler, JANTXV Screening level
4N47 Optocoupler, JANS Screening level
4N48 Optocoupler, JANS Screening level
4N49 Optocoupler, JANS Screening level
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
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