CEP02N6/CEB02N6
4
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
DYNAMIC CHARACTERISTICS
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage
C
ISS
C
OSS
C
RSS
V
SD
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
250
50
30
1.5
P
F
P
F
P
F
Symbol
Condition
Min Typ Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
a
4
V
GS
= 0V, Is =2A
V
Notes
a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
c. L=60mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
Ω
, Starting T
J
=25 C
3.0
V
GS
=10,9,8,7V
2.5
I
D
, Drain Current(A)
2.0
1.5
1.0
I
D
, Drain Current (A)
150 C
1
V
GS
=6V
V
GS
=5V
0.5
0
0
2
4
6
8
10
12
-55 C
25 C
1.V
DS
=40V
2.Pulse Test
0.1
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
4-4
CEP02N6/CEB02N6
R
DS(ON)
, Normalized
R
DS(ON)
,
On-Resistance(Ohms)
600
500
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
I
D
=1A
V
GS
=10V
C, Capacitance (pF)
400
300
200
100
0
0
5
10
15
20
25
Coss
Crss
Ciss
4
V
DS
, Drain-to Source Voltage (V)
T
J
, Junction Temperature( C)
Figure 3. Capacitance
BV
DSS
, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
-50 -25
0
25
50
75 100 125 150
V
DS
=V
GS
I
D
=250 A
Figure 4. On-Resistance Variation with
Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
I
D
=250 A
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
4
Figure 6. Breakdown Voltage Variation
with Temperature
20
10
V
GS
=0V
g
FS
, Transconductance (S)
V
DS
=50V
3
2
Is, Source-drain current (A)
0
1
2
3
4
1
1
0
0.1
0.4
0.6
0.8
1.0
1.2
I
DS
, Drain-Source Current (A)
V
SD
, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
4-5
Figure 8. Body Diode Forward Voltage
Variation with Source Current
CEP02N6/CEB02N6
V
GS
, Gate to Source Voltage (V)
15
12
9
6
3
0
0
6
12
18
24
Qg, Total Gate Charge (nC)
10
V
DS
=480V
I
D
=2A
I
D
, Drain Current (A)
1
R
DS
4
(O
N)
Lim
it
D
C
1m
10
m
s
10
s
s
0.1
T
C
=25C
Tj=25 C
Single Pulse
1
10
100
500 1000
0.01
V
DS
, Drain-Source Voltage (V)
Figure 9. Gate Charge
Figure 10. Maximum Safe
Operating Area
V
DD
t
on
V
IN
D
V
GS
R
GEN
G
90%
t
off
t
r
90%
R
L
V
OUT
t
d(on)
V
OUT
t
d(off)
90%
10%
t
f
10%
INVERTED
S
V
IN
50%
10%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
2
r(t),Normalized Effective
Transient Thermal Impedance
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
P
DM
t
1
t
2
1. R
JC
(t)=r (t) * R
JC
2. R
JC
=See Datasheet
3. T
JM-
T
C
= P* R
JC
(t)
4. Duty Cycle, D=t1/t2
1
10
100
1000
10000
0.01
0.01
0.1
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
4-6
为我们提建议&公告
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
