N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 4.8A, R
DS(ON)
= 34mΩ @V
GS
= 10V.
R
DS(ON)
= 40mΩ @V
GS
= 4.5V.
R
DS(ON)
= 60mΩ @V
GS
= 2.5V.
High dense cell design for extremely low R
DS(ON)
.
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
G
S
G
SOT-23
CES2310
D
D
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
30
Units
V
V
A
A
W
C
±
12
4.8
20
1.25
-55 to 150
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
100
Units
C/W
Details are subject to change without notice .
1
Rev 3. 2007.Aug
http://www.cetsemi.com
CES2310
Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Static Drain-Source
On-Resistance
Dynamic Characteristics
Forward Transconductance
d
c
T
A
= 25 C unless otherwise noted
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
= 12V, V
DS
= 0V
V
GS
= -12V, V
DS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V, I
D
= 4.8A
V
GS
= 4.5V, I
D
= 4A
V
GS
= 2.5V, I
D
= 2A
V
DS
= 10V, I
D
= 4.8A
V
DS
= 15V, V
GS
= 0V,
f = 1.0 MHz
0.6
28
32
45
12
610
125
80
10
3
35
4
V
DS
= 15V, I
D
= 4.8A,
V
GS
= 4.5V
9.0
2.3
2.2
4.8
V
GS
= 0V, I
S
= 1A
1
20
6
70
8
12
Min
30
1
100
-100
1.4
34
40
60
Typ
Max
Units
V
µA
nA
nA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Gate Threshold Voltage
7
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
b
Drain-Source Diode Forward Voltage
c
V
DD
= 15V, I
D
= 4.8A,
V
GS
= 10V, R
GEN
= 3Ω
Drain-Source Diode Characteristics and Maximun Ratings
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CES2310
15
12
9
6
3
0
V
GS
=10,8,6,3V
10
25 C
8
6
4
2
0
I
D
, Drain Current (A)
V
GS
=2V
I
D
, Drain Current (A)
T
J
=125 C
0
0.5
1.0
1.5
-55 C
2.0
2.5
3.0
0
0.5
1
1.5
2
2.5
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
900
750
600
450
300
150
0
Crss
0
5
10
15
20
25
Coss
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
I
D
=4.8A
V
GS
=10V
Ciss
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
10
-1
0
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V
GS
=0V
10
1
V
TH
, Normalized
Gate-Source Threshold Voltage
V
DS
=V
GS
I
D
=250µA
10
-25
0
25
50
75
100
125
150
0.6
0.7
0.8
0.9
1.0
1.1
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CES2310
V
GS
, Gate to Source Voltage (V)
5
V
DS
=15V
I
D
=4.8A
10
2
R
DS(ON)
Limit
I
D
, Drain Current (A)
4
10
1
1ms
10ms
100ms
1s
DC
3
10
0
2
10
-1
1
0
0
3
6
9
10
-2
T
A
=25 C
T
J
=150 C
Single Pulse
10
-1
10
0
10
1
10
2
7
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
V
DS
, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
V
DD
t
on
V
IN
D
V
GS
R
GEN
G
90%
t
off
t
r
90%
R
L
V
OUT
t
d(on)
V
OUT
t
d(off)
90%
10%
t
f
10%
INVERTED
S
V
IN
50%
10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1
0.05
0.02
Single Pulse
-4
P
DM
t
1
t
2
1. R
θJA
(t)=r (t) * R
θJA
2. R
θJA
=See Datasheet
3. T
JM-
T
A
= P* R
θJA
(t)
4. Duty Cycle, D=t1/t2
10
-2
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
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