BCP56
NPN Silicon Planar Epitaxial Transistor
P b
Lead(Pb)-Free
BASE
1
3
EMITTER
COLLECTOR
2, 4
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
4
1
2
3
SOT-223
ABSOLUTE MAXIMUM RATINGS (T
A
=25˚C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Disspation T
A
=25˚C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC(DC)
PD
Tj
Tstg
Value
80
100
5
1
2
150
-55 to +150
Unit
V
V
V
A
W
˚C
˚C
Device Marking
BCP56=BCP56
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage
(IC=1mA, IB=0)
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
Min
80
Typ
-
-
-
-
-
-
Max
-
-
-
100
10
100
Unit
V
V
V
nA
uA
nA
Collector-Base Breakdown Voltage
(IC=100µA, IE=0)
100
5
-
-
Emitter-Base Breakdown Voltage
(IE=10 µA, IC=0)
Collector-Emitter Cutoff Current
(V
CB
=30V , IE=0)
(V
CB
=30V , IE=0 , Tj=125˚C)
Emitter-Base Cutoff Current
(V
EB
=5V , IC=0)
I
EBO
-
WEITRON
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1/3
15-Jul-05
BCP56
ON CHARACTERISTICS
DC Current Gain
(V
CE
= 2V, I
C
= 5mA)
(V
CE
= 2V, I
C
= 150mA)
(V
CE
= 2V, I
C
= 500mA)
h
FE1
h
FE2
h
FE3
V
CE(sat)
V
BE(ON)
63
63
40
-
-
-
-
-
-
-
-
250
-
500
1
-
-
-
mV
V
Collector-Emitter Saturation Voltages
(I
C
= 0.5mA, I
B
= 50mA)
Base-Emitter ON Voltages
(V
CE
= 5V, I
C
= 0.5A, f=100MHz)
DYNAMIC CHARACTERISTICS
Transition frequency
(V
CE
= 2V, IC = 150mA)
ft
-
130
-
MHz
CLASSIFICATION OF hFE2
Rank
Range
10
63-160
16
100-250
CHARACTERISTICS CURVE
1000
100000
Saturation Voltage (mA)
10000
100
hFE
V
CE
= 10V
1000
10
V
BE(sat)
@IC=10 I
B
100
V
CE(sat)
@IC=10 I
B
10
1
0.1
1
10
100
1000
10000
0.1
1
10
100
1000
10000
Collector Current (mA)
Fig.1 Current Gain & Collector Current
100
Collector Current (mA)
Fig.2 Saturation Voltage & Collector Current
10000
Collector Current-I
C
(mA)
Capacitance (pF)
1000
PT=1ms
PT=100ms
PT=1s
10
100
10
Cob
1
0.1
1
10
100
1
1
10
100
1000
Reverse-Biased Voltage (V)
Fig.3 Capacitance & Reverse-Biased Voltage
Forward Voltage-V
CE
(V)
Fig.4 Safe Operation Area
2/3
15-Jul-05
WEITRON
http://www.weitron.com.tw
FPGA/CPLD
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