3.0 SMCJ Series
3000W Surface Mount
Transient Voltage Suppressor
P b
Lead(Pb)-Free
Features:
* For surface mounted applications in order to optimize
board space
* Low profile package
* Built-in strain relief
* Glass passivated junction
* Low inductance
* Excellent clamping capability
* Repetition Rate (duty cycle):0.01%
* Fast response time: typically less than 1.0ps from
0 Volts to BV for unidirectional types
* Typical IR less than 1µA above 10V
* High temperature soldering: 250°C/10 seconds at terminals
* Plastic package has Underwriters Laboratory Flammability 94V-O
VOLTAGE
5.0 to 170 Volts
Peak Pulse Power
3000 Watt
SMC(DO-214AB)
Mechanical Data:
* Case: JEDEC DO214AB. Molded plastic over glass passivated junction
* Terminal: Solderable per MIL-STD-750, Method 2026
* Polarity: Color band denoted positive end (cathode) except Bidirectional
* Standard Packaging: 16mm tape (EIA STD RS-481)
* Weight: 0.21 gram
DEVICES FOR BIPOLAR APPLICATION
For Bidirectional use C or CA Suffix for types SMCJ5.0 thru types SMCJ170
(e.g. SMCJ5.0C , SMCJ170CA)Electrical characteristics apply in both directions
MAXIMUM RATINGS AND CHARACTERISTICS
(T
A
=25°C Unless otherwise specified)
Rating
Peak Pulse Power Dissipation on 10/1000µs waveform (Note 1,2,FIG.1)
Peak Pulse Current of on 10/1000µs waveform (Note 1,FIG.3)
Peak Forward Surge Current,8.3ms Single Half Sine-Wave
Superimposed on Rated Load,(JEDEC Method) (Note2, 3)
Operating junction Temperature Range
Storage Temperature Range
Symbol
P
PPM
I
PPM
I
FSM
T
J
T
STG
Value
3000(Min)
SEE TABLE 1
Units
W
A
A
°C
°C
300
+150
-55 to +150
Notes :
1. Non-repetitive current pulse , per Fig. 3 and derated above T
A
= 25°C per Fig.2.
2. Mounted on 8.0mm x 8.0mm Copper Pads to each terminal.
3. 8.3ms single half sine-wave , or equivalent square wave, Duty cycle = 4 pulses per minutes maximum.
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3.0 SMCJ Series
RATINGS AND CHARACTERISTIC CURVES
Ratings andCharacteristic Curves
(T
A
=25℃ unless otherwise noted)
100
P
PPM
-Peak Pulse Power (kW)
Peak Pulse Power (P
PP
)
or Current (I
PP
)
Derating in Percentage,%
Non-repetitive pulse
waveform shown in
Fig.3 T
A
= 25°C
100
75
10
50
1
25
0.1
0
1.0µ
10µs
100µs
1.0ms
10ms
0.1µ
0
25
50
75
100
125
150
175
200
Fig.1 Peak Pulse Power Rating
150
t
d
- Pulse Width
Fig.2 Pulse Derating Curve
10000
T
A
- Ambient Temperature (°C)
I
PPM
- Peak Pulse Current,% I
RSM
t
r
= 10µsec.
Peak Value
I
PPM
100
Half Value-
I
PPM
C
J
- Capacitance (pF)
Pulse Width(td)is
defined
as the point where the
peak current decays to
50% of I
PPM
T
J
= 25°C
Unidirectional
Bidirectional
1000
V
R
= 0
50
10/1000µsec.Waveform
as defined by R.E.A.
100
V
R
= Rated
Stand-off Voltage
f = 1MHz
V
sig
= 50mV
p-p
T
J = 25°C
0
t
d
0
1.0
2.0
3.0
4.0
10
5
10
100
500
Fig.3 Pulse Waveform
100
300
t - Time(ms)
V
WM
- Reverse Stand-Off Voltage (V)
Fig.4 Typical Junction Capacitance
Ptransient Thermal Impedance(i C/W)
I
FSM
,Peak Forward Surge Currnet (A)
8.3ms Single Half Sine-Wave
(JEDEC Method)
250
10
200
1
150
0.1
0.00
0.01
0.1
1
10
100
1000
100
1
10
100
Fig.5 Type Transient ThermalImpedance
t
d
- Pulse Duration (sec.)
Number of Cycles at 60 H
Z
Fig.6 Maximum Non-repetitive ForwardSurge current
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Microchip MCU
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