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BYV26EAGP

产品描述sintered glass junction fast switching plastic rectifier voltage: 1000v current: 1.5A
产品类别分立半导体    二极管   
文件大小74KB,共2页
制造商Gulf Semiconductor
官网地址http://www.gulfsemi.com/
下载文档 详细参数 全文预览

BYV26EAGP概述

sintered glass junction fast switching plastic rectifier voltage: 1000v current: 1.5A

BYV26EAGP规格参数

参数名称属性值
厂商名称Gulf Semiconductor
包装说明O-PALF-W2
Reach Compliance Codeunknown
ECCN代码EAR99
应用FAST RECOVERY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)2.5 V
JEDEC-95代码DO-15
JESD-30 代码O-PALF-W2
最大非重复峰值正向电流30 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流1.5 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
最大重复峰值反向电压1000 V
最大反向电流5 µA
最大反向恢复时间0.075 µs
表面贴装NO
端子形式WIRE
端子位置AXIAL

文档预览

下载PDF文档
BYV26EAGP
SINTERED GLASS JUNCTION
FAST SWITCHING PLASTIC RECTIFIER
VOLTAGE: 1000V
CURRENT: 1.5A
FEATURE
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of
MIL-S-19500
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
Operate at Ta
=55°C
with no thermal run away
Typical Ir<0.1µA
DO-15
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Reverse avalanche breakdown voltage
at IR = 0.1 mA
Maximum Average Forward Rectified
Current 3/8”lead length at Ta =55°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at 1.0A
Non-repetitive peak reverse avalanche energy
(Note 1)
Maximum DC Reverse Current
Ta =25°C
at rated DC blocking voltage
Ta =150°C
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance
(Note 3)
Typical Thermal Resistance
(Note 4)
Storage and Operating Junction Temperature
Vrrm
Vrms
Vdc
V(BR)R
If(av)
Ifsm
Vf
Ersm
Ir
Trr
Cj
Rth(ja)
Tstg, Tj
BYV26EAGP
1000
700
1000
1100min
1.5
30
2.5
10
5.0
150.0
75
15.0
55.0
-65 to +175
units
V
V
V
V
A
A
V
mJ
µA
nS
pF
°C
/W
°C
Note: 1. I
R
=400mA; Tj=Tjmax prior to surge; inductive load switched off
2. Reverse Recovery Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
3. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
4. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
Rev.A1
www.gulfsemi.com

 
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