N Channel Enhancement Mode MOSFET
ST3400
5.8A
DESCRIPTION
The ST3400 is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other battery powered circuits where high
side switching
.
PIN CONFIGURATION
SOT-23-3L
3
D
G
1
1.Gate
2.Source
S
2
3.Drain
FEATURE
30V/5.8A, R
DS(ON)
= 28mΩ (Typ.)
@V
GS
= 10V
30V/4.8A, R
DS(ON)
= 33mΩ
@V
GS
= 4.5V
30V/4.0A, R
DS(ON)
= 40mΩ
@V
GS
= 2.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
PART MARKING
SOT-23-3L
3
A0YA
1
Y: Year Code
2
A: Week Code
ORDERING INFORMATION
Part Number
ST3400S23RG
Package
SOT-23-3L
Part Marking
A0YA
※
Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※
ST3400S23RG
S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free
1
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
N Channel Enhancement Mode MOSFET
ST3400
5.8A
ABSOULTE MAXIMUM RATINGS
(Ta = 25
℃
Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150
℃
)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=70
℃
T
A
=25℃
T
A
=70
℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Typical
30
±
12
5.8
3.5
25
1.7
2.0
1.3
150
-55/150
90
Unit
V
V
A
A
A
W
℃
℃
℃
/W
2
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
N Channel Enhancement Mode MOSFET
ST3400
5.8A
ELECTRICAL CHARACTERISTICS
( Ta = 25
℃
Unless otherwise noted )
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Condition
Min Typ Max
Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
GS
=0V,I
D
=250uA
V
DS
=VGS,I
D
=250uA
V
DS
=0V,V
GS
=
±
12V
V
DS
=24V,V
GS
=0V
V
DS
=24V,V
GS
=0V
T
J
=55
℃
V
DS
≧
5V,V
GS
=4.5V
V
GS
=10V,I
D
=5.8A
V
GS
=4.5V,I
D
=4.8A
V
GS
=2.5V,I
D
=4.0A
V
DS
=4.5V,I
D
=5.8A
I
S
=1.7A,V
GS
=0V
30
0.8
1.6
±
100
1
10
10
28
33
40
V
V
nA
uA
A
m
Ω
S
12
0.8
1.2
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
tr
V
DS
=15V
V
GS
=10V
I
D
≣
6.7A
V
DS
=15V
V
GS
=0V
F=1MH
z
V
DD
=15V
R
L
=15
Ω
I
D
=1.0A
V
GEN
=10V
R
G
=6
Ω
9.7
1.6
3.1
450
240
38
7
10
20
11
18
nC
pF
15
20
40
20
nS
t
d(off)
tf
3
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
N Channel Enhancement Mode MOSFET
ST3400
5.8A
TYPICAL CHARACTERICTICS
(25
℃
Unless noted)
4
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
N Channel Enhancement Mode MOSFET
ST3400
5.8A
TYPICAL CHARACTERICTICS
(25℃ Unless noted)
5
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
STN3400 2006. V1
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